Patents by Inventor Syouichiro Himuro

Syouichiro Himuro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrostatic chuck
    Patent number: 7760484
    Abstract: The present invention provides an electrostatic chuck, which has high plasma resistance and high capability of cooling a material to be clamped. As for the basic structure of the electrostatic chuck, an insulating film is formed on a surface of a metal plate by flame spraying, and a dielectric substrate is bonded onto the insulating film by an insulating adhesive layer. The top surface of the dielectric substrate is a surface for mounting a material to be clamped W such as a semiconductor wafer. Electrodes are formed on the lower surface of the dielectric substrate.
    Type: Grant
    Filed: July 7, 2008
    Date of Patent: July 20, 2010
    Assignee: Toto Ltd.
    Inventors: Ikuo Itakura, Syouichiro Himuro
  • Electrostatic chuck
    Patent number: 7468880
    Abstract: The object of the present invention is to provide an electrostatic chuck which has high plasma resistance and high capability of cooling a material to be clamped. As for the basic structure of the electrostatic chuck, an insulating film is formed on a surface of a metal plate by flame spraying, and a dielectric substrate is bonded onto the insulating film by an insulating adhesive layer. The top surface of the dielectric substrate is a surface for mounting a material to be clamped W such as a semiconductor wafer. Electrodes are formed on the lower surface of the dielectric substrate.
    Type: Grant
    Filed: December 13, 2005
    Date of Patent: December 23, 2008
    Assignee: Toto Ltd.
    Inventors: Ikuo Itakura, Syouichiro Himuro
  • Electrostatic chuck
    Publication number: 20080273284
    Abstract: The present invention provides an electrostatic chuck, which has high plasma resistance and high capability of cooling a material to be clamped. As for the basic structure of the electrostatic chuck, an insulating film is formed on a surface of a metal plate by flame spraying, and a dielectric substrate is bonded onto the insulating film by an insulating adhesive layer. The top surface of the dielectric substrate is a surface for mounting a material to be clamped W such as a semiconductor wafer. Electrodes are formed on the lower surface of the dielectric substrate.
    Type: Application
    Filed: July 7, 2008
    Publication date: November 6, 2008
    Applicant: Toto Ltd.
    Inventors: Ikuo Itakura, Syouichiro Himuro
  • Electrostatic chuck
    Publication number: 20060268491
    Abstract: The object of the present invention is to provide an electrostatic chuck which has high plasma resistance and high capability of cooling a material to be clamped. As for the basic structure of the electrostatic chuck, an insulating film is formed on a surface of a metal plate by flame spraying, and a dielectric substrate is bonded onto the insulating film by an insulating adhesive layer. The top surface of the dielectric substrate is a surface for mounting a material to be clamped W such as a semiconductor wafer. Electrodes are formed on the lower surface of the dielectric substrate.
    Type: Application
    Filed: December 13, 2005
    Publication date: November 30, 2006
    Applicant: TOTO LTD.
    Inventors: Ikuo Itakura, Syouichiro Himuro