Abstract: A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.

Abstract: A solid-state imaging device includes pixels 2 arranged two-dimensionally on a semiconductor substrate 1. In a predetermined area in each pixel is formed a light-sensitive area 3 for receiving incident light 11, and each pixel includes a photoelectric conversion portion 4 for converting the incident light into a signal charge. In at least some of the pixels, the center of the light-sensitive area is offset from the center of the pixel when seen from directly above a principal surface of the semiconductor substrate. Each pixel further includes a light-path change member 12a and 12b for deflecting incident light traveling toward the center of the pixel so as to be directed toward the center of the light-sensitive area. Thus, a solid-state imaging device simultaneously realizing the miniaturization of pixels and a high image quality is provided.

Abstract: A solid-state imaging device can increase the amount of signal charge accumulation in a photodiode. The solid-state imaging device includes a gate electrode formed on a p-type semiconductor substrate. An n-type signal accumulation region accumulates the signal charge obtained through a photo-electrical conversion, and is formed in the semiconductor substrate so that a portion of the signal accumulation region is positioned below the gate electrode. An n-type drain region is positioned in the semiconductor substrate so that the n-type drain region is positioned opposite the signal accumulation region across the gate electrode. A p-type punch-through stopper region has a higher impurity concentration than the semiconductor substrate, and is formed in the semiconductor substrate so that the p-type punch-through region is positioned below the drain region, wherein an end of the punch-through stopper region is positioned closer to the signal accumulation region than the end of the drain region.

Abstract: A solid-state imaging device can be provided by which a signal charge stored in a photodiode can be transferred completely even when a power supply voltage is low. The solid-state imaging device includes: a plurality of pixel cells arranged on a semiconductor substrate; and a driving unit that is provided for driving the plurality of pixel cells. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a transfer transistor that is provided for reading out the signal charge stored in the photodiode; and a potential smoothing unit that is formed so as to allow a potential from the photodiode to the transfer transistor to change smoothly.

Abstract: A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.

Abstract: An object of the present invention is to provide a solid-state imaging device which can increase the amount of signal charge accumulation in a photodiode, and a manufacturing method thereof.

Abstract: A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.

Abstract: Photodiodes 20a and 20b are formed in the main surface of the semiconductor substrate 10. The photodiode 20a includes a P+-type surface layer 22a and a charge accumulating portion 21a, and the photodiode 20b includes a P+-type surface layer 22b and a charge accumulating portion 21b. The photodiodes 20a and 20b are separated by an element isolating portion 33a having an STI structure. The bottom portions of the charge accumulating portions 21a and 21b constituting the photodiodes 20a and 20b are located in a deeper position from the main surface of the semiconductor substrate 10 than the bottom portions of the element isolating portion 33a. Thus, a solid-state imaging device in which color mixing can be prevented and the capacity of the charge accumulating portions is large, and the sensitivity and the saturation characteristics are excellent can be provided.

Abstract: A solid-state imaging device includes pixels 2 arranged two-dimensionally on a semiconductor substrate 1. In a predetermined area in each pixel is formed a light-sensitive area 3 for receiving incident light 11, and each pixel includes a photoelectric conversion portion 4 for converting the incident light into a signal charge. In at least some of the pixels, the center of the light-sensitive area is offset from the center of the pixel when seen from directly above a principal surface of the semiconductor substrate. Each pixel further includes a light-path change member 12a and 12b for deflecting incident light traveling toward the center of the pixel so as to be directed toward the center of the light-sensitive area. Thus, a solid-state imaging device simultaneously realizing the miniaturization of pixels and a high image quality is provided.

Abstract: A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.

Abstract: A solid-state imaging device can be provided by which a signal charge stored in a photodiode can be transferred completely even when a power supply voltage is low. The solid-state imaging device includes: a plurality of pixel cells arranged on a semiconductor substrate; and a driving unit that is provided for driving the plurality of pixel cells. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a transfer transistor that is provided for reading out the signal charge stored in the photodiode; and a potential smoothing unit that is formed so as to allow a potential from the photodiode to the transfer transistor to change smoothly.

Abstract: A solid-state imaging device comprises a plurality of pixels, each pixel comprising a semiconductor substrate; a photo-receiving portion formed in the semiconductor substrate; a detecting region formed in the semiconductor substrate; an insulating film formed on the semiconductor substrate, a gate electrode formed on the insulating film above the region between the photo-receiving portion and the detecting region; and a read-out circuit, which is electrically connected to the detecting portion. A reflection reducing film is formed on the insulating film above the region including at least one part of the photo-receiving portion and excluding at least one part of the detecting portion in the semiconductor substrate. With this solid-state imaging device and with the method for manufacturing the same, a highly sensitive MOS solid-state imaging device and the method for manufacturing the same are provided.

Abstract: An absorption cold/hot water generating machine comprising a refrigerating cycle formed by pipe-connecting an evaporator, an absorber, a solution heat exchanger, a low-temperature generator, a condenser, a high-temperature generator, a solution pump, and a refrigerant pump; the solution pump being an inverter-driven pump; a header for receiving a return solution from the high-temperature generator; a level sensor for detecting the liquid level in the header; and control means for controlling the flow rate of the solution sent from the absorber to the high-temperature generator by controlling the operating frequency of the solution pump, thereby keeping the solution level in the header within a prescribed range; wherein the control means includes sampling mode setting means for setting a solution sampling mode in which the discharge side pressure of the solution pump is brought to over a prescribed pressure through control of the operating frequency thereof.

Abstract: A controller for an absorption cold/hot water generating machine, in which a refrigerating cycle is formed by pipe-connecting an evaporator, an absorber, a solution heat exchanger, a low-temperature generator, a condenser, and a high-temperature generator, and the solution level in a header of the high-temperature generator is kept within a prescribed range by controlling the flow rate of the solution fed from the absorber to the high-temperature generator; wherein a solution pump for feeding a solution from the absorber to the high-temperature generator is inverter-driven, and there is provided pressure difference detecting means for detecting a difference in pressure between the high-temperature generator and the absorber; and wherein there is provided control means which controls the solution pump driving frequency of the inverter as a function of a pressure difference between the high-temperature generator and the absorber.

Abstract: An ice thermal storage refrigerator unit includes a brine path consisting essentially of a refrigerator, an ice thermal storage tank, a water heat exchanger, a brine pump, and control valves, which are connected by piping, and a cold water path consisting essentially of the water heat exchanger, a cooling load, and a cold water pump, which are connected by piping, so that brine is cooled in the refrigerator, and water in the ice thermal storage tank is frozen by the brine, thereby storing heat, and when heat is to be discharged, the brine is cooled by heat of fusion of the ice in the ice thermal storage tank, and the brine is introduced into the water heat exchanger to cool cold water, thereby taking out a cooling capacity.

Abstract: An absorption refrigeration system incorporating a novel solution flow control is disclosed. The solution flow control includes a sensor, preferably in the form of a float which senses the level of the solution in the absorber of the system. The signal from the level sensor is utilized to position a valve for controlling the flow of weak solution in such a manner that the solution flow increases/decreases as the level of the solution in the absorber decreases/increases. The solution control not only provides improved efficiency of the refrigeration system but also protects the system from the risk of crystallization of the solution. In one embodiment, a compact solution control is fully enclosed by an air-tight shell of the absorber and comprises a float, a rod mechanically and drivingly coupling the float with a solution valve so that the buoyancy of the float directly positions the valve. This arrangement does not need to meet the requirement of having an air tight structure and assures a long life in use.