Abstract: A semiconductor memory device comprises a plurality of banks (B1-Bn), a plurality of local buses (L0T and L0N-LnT and LnN) arranged in the banks, and a global bus (G) connected to the local buses. A switching element (TR05 and TR06-TRn5 and TRn6) is arranged at a junction between each of the local buses and the global bus. The switching element comprises a transistor. The transistor is responsive to a signal supplied from the local bus to its gate. The transistor connects the local bus and the global bus.

Abstract: In a semiconductor memory including a memory cell array and a redundant memory cell array, a defective memory cell address detecting circuit includes a precharge transistor for precharging a COMP signal line of outputting a signal indicative of whether or not an input address is an address of the defective memory cell, and a plurality of detection transistors connected in parallel to the COMP signal line. Each of the detection transistors has a gate connected to receive, through a wired connection, a corresponding bit and its inverted bit of bits of the input address signal. Thus, the number of detection transistors connected in parallel to the COMP signal line can be reduced to a half of the number required in the prior art.