Patents by Inventor Syozo Sato

Syozo Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5184008
    Abstract: An X-ray imaging tube comprising an vacuum envelope, and input screen located in the input end of the envelope, an output screen located in the output end of the envelope, an anode located in the output end of the envelope, and a plurality of beam-converging electrodes located in the envelope and arranged along the inner surface of the envelope. The tube has an magnification of used input field size of 2.3 or more. The components of the tube have such positions and sizes, thus satisfying the following relations:3.5.ltoreq.G3.sub.D /A.sub.D .ltoreq.5.0-3.65.times.MAG+1.00.ltoreq.G3.sub.L /L.ltoreq.-3.65.times.MAG+1.05where L is the distance between the input and output screens, A.sub.D is the inside diameter of the anode or one of the beam-converging electrodes set at the same potential as the anode, which is closer to the input screen than any other beam-converging electrodes set at the same potential as the anode, G3.sub.
    Type: Grant
    Filed: October 10, 1991
    Date of Patent: February 2, 1993
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Keiichi Saito, Shigeharu Kawamura, Syozo Sato, Kiyohito Kawasumi
  • Patent number: 4906893
    Abstract: An output phosphor film used in an output screen of an image intensifier is made of ZnS or (Zn, Cd)S host material and at least one activator element selected from the group consisting of Cu, Ag, Au, Al, and Cl. The phosphor film is formed on a face plate by means of chemical vapor-deposition, or physical vapor deposition in an inert-gas atmosphere having a pressure of 1 Pa or more, and is heat-treated. The formed phosphor film has hexagonal (Wurtzite-type) crystal and/or cubic (sphalerite-type) crystal structure. These crystals are orientated such that the (002) planes of the hexagonal crystals and/or the (111) planes of the cubic crystals are substantially parallel to the face plate.
    Type: Grant
    Filed: December 20, 1988
    Date of Patent: March 6, 1990
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsuhisa Homma, Sakae Kimura, Masaru Nikaido, Yoshiaki Ouchi, Yoshiharu Obata, Yoshikazu Uemura, Syozo Sato
  • Patent number: 4168630
    Abstract: A semiconductor pressure converter includes a silicon pressure sensing element, a silicon base hermetically attached to the sensing element to bear the element and a metal pipe connected to the silicon base so as to introduce a pressure to the sensing element through the silicon base.
    Type: Grant
    Filed: November 22, 1977
    Date of Patent: September 25, 1979
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Shunji Shirouzu, Susumu Kimijima, Syozo Sato