Patents by Inventor Syu A. Chen
Syu A. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9929217Abstract: A method of manufacturing an array substrate of a display is provided. The method includes forming a first bank material layer on a first substrate, wherein a material of the first bank material layer includes hydrophobic element; patterning the first bank material layer to form a first bank having at least one first concave; forming a first electrode on the first bank and in the first concave after the step of patterning the first bank material layer to form the first bank; and forming an color layer on the first electrode.Type: GrantFiled: January 27, 2016Date of Patent: March 27, 2018Assignee: AU OPTRONICS CORPORATIONInventors: Hong-Syu Chen, Wen-Pin Chen, Teng-Ke Chen, Tsu-Wei Chen, Kuo-Kuang Chen
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Publication number: 20170213871Abstract: A method of manufacturing an array substrate of a display is provided. The method includes forming a first bank material layer on a first substrate, wherein a material of the first bank material layer includes hydrophobic element; patterning the first bank material layer to form a first bank having at least one first concave; forming a first electrode on the first bank and in the first concave after the step of patterning the first bank material layer to form the first bank; and forming an color layer on the first electrode.Type: ApplicationFiled: January 27, 2016Publication date: July 27, 2017Inventors: Hong-Syu CHEN, Wen-Pin Chen, Teng-Ke Chen, Tsu-Wei Chen, Kuo-Kuang Chen
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Patent number: 9331107Abstract: A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.Type: GrantFiled: May 22, 2015Date of Patent: May 3, 2016Assignee: Au Optronics CorporationInventors: Wei-Hao Tseng, Fan-Wei Chang, Shou-Wei Fang, Hong-Syu Chen, Jen-Yu Lee, Tsung-Hsiang Shih, Hung-Che Ting
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Patent number: 9331106Abstract: A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.Type: GrantFiled: March 20, 2014Date of Patent: May 3, 2016Assignee: Au Optronics CorporationInventors: Wei-Hao Tseng, Fan-Wei Chang, Shou-Wei Fang, Hong-Syu Chen, Jen-Yu Lee, Tsung-Hsiang Shih, Hung-Che Ting
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Publication number: 20150270293Abstract: A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.Type: ApplicationFiled: May 22, 2015Publication date: September 24, 2015Inventors: Wei-Hao Tseng, Fan-Wei Chang, Shou-Wei Fang, Hong-Syu Chen, Jen-Yu Lee, Tsung-Hsiang Shih, Hung-Che Ting
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Publication number: 20150123111Abstract: A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.Type: ApplicationFiled: March 20, 2014Publication date: May 7, 2015Applicant: Au Optronics CorporationInventors: Wei-Hao Tseng, Fan-Wei Chang, Shou-Wei Fang, Hong-Syu Chen, Jen-Yu Lee, Tsung-Hsiang Shih, Hung-Che Ting
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Patent number: 8541779Abstract: A pixel structure of an organic electroluminescence apparatus includes at least an active device connected to a scan line and a data line, a first electrode, a dielectric material layer, a first isolating layer, a second isolating layer, an organic light-emitting material layer and a second electrode. The dielectric material layer is disposed on the first electrode and has a first opening to expose the first electrode. The first isolating layer disposed on the dielectric material layer includes an oxide semiconductor material and has a second opening to expose the first electrode. The second isolating layer is disposed on the first isolating layer and has a third opening to expose the first electrode in the first opening and the first isolating layer in a sidewall of the second opening. The organic light-emitting material layer is in the third opening. The second electrode is on the organic light-emitting layer.Type: GrantFiled: September 7, 2012Date of Patent: September 24, 2013Assignee: Au Optronics CorporationInventors: Hong-Syu Chen, Shou-Wei Fang, Jen-Yu Lee, Tsung-Hsiang Shih, Hsueh-Hsing Lu, Chia-Yu Chen
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Patent number: 5224314Abstract: A wasted spacer member for spacing construction blocks in a wall formed therefrom, and particularly suited for glass bricks, comprising a pair of parallel cross-shaped or T-shaped positioning elements joined by a length adjustable connecting element including a pair of overlapping elongate connecting bars formed on the inner sides of respective positioning elements and extending perpendicularly therefrom. Each connecting bar has parallel inner and outer sides aligned parallel with a vertical direction, with the inner sides of each connecting bar being mutually abutting along the outer portions thereof. A set of aperture holes are formed at predetermined positions along a first connecting bar, and a cooperating pair of correspondingly spaced, protruding securing buttons are formed along a second connecting bar.Type: GrantFiled: February 18, 1992Date of Patent: July 6, 1993Inventor: Syu A. Chen