Patents by Inventor Syu A. Chen

Syu A. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9929217
    Abstract: A method of manufacturing an array substrate of a display is provided. The method includes forming a first bank material layer on a first substrate, wherein a material of the first bank material layer includes hydrophobic element; patterning the first bank material layer to form a first bank having at least one first concave; forming a first electrode on the first bank and in the first concave after the step of patterning the first bank material layer to form the first bank; and forming an color layer on the first electrode.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: March 27, 2018
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Hong-Syu Chen, Wen-Pin Chen, Teng-Ke Chen, Tsu-Wei Chen, Kuo-Kuang Chen
  • Publication number: 20170213871
    Abstract: A method of manufacturing an array substrate of a display is provided. The method includes forming a first bank material layer on a first substrate, wherein a material of the first bank material layer includes hydrophobic element; patterning the first bank material layer to form a first bank having at least one first concave; forming a first electrode on the first bank and in the first concave after the step of patterning the first bank material layer to form the first bank; and forming an color layer on the first electrode.
    Type: Application
    Filed: January 27, 2016
    Publication date: July 27, 2017
    Inventors: Hong-Syu CHEN, Wen-Pin Chen, Teng-Ke Chen, Tsu-Wei Chen, Kuo-Kuang Chen
  • Patent number: 9331106
    Abstract: A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: May 3, 2016
    Assignee: Au Optronics Corporation
    Inventors: Wei-Hao Tseng, Fan-Wei Chang, Shou-Wei Fang, Hong-Syu Chen, Jen-Yu Lee, Tsung-Hsiang Shih, Hung-Che Ting
  • Patent number: 9331107
    Abstract: A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: May 3, 2016
    Assignee: Au Optronics Corporation
    Inventors: Wei-Hao Tseng, Fan-Wei Chang, Shou-Wei Fang, Hong-Syu Chen, Jen-Yu Lee, Tsung-Hsiang Shih, Hung-Che Ting
  • Publication number: 20150270293
    Abstract: A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.
    Type: Application
    Filed: May 22, 2015
    Publication date: September 24, 2015
    Inventors: Wei-Hao Tseng, Fan-Wei Chang, Shou-Wei Fang, Hong-Syu Chen, Jen-Yu Lee, Tsung-Hsiang Shih, Hung-Che Ting
  • Publication number: 20150123111
    Abstract: A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.
    Type: Application
    Filed: March 20, 2014
    Publication date: May 7, 2015
    Applicant: Au Optronics Corporation
    Inventors: Wei-Hao Tseng, Fan-Wei Chang, Shou-Wei Fang, Hong-Syu Chen, Jen-Yu Lee, Tsung-Hsiang Shih, Hung-Che Ting
  • Patent number: 8541779
    Abstract: A pixel structure of an organic electroluminescence apparatus includes at least an active device connected to a scan line and a data line, a first electrode, a dielectric material layer, a first isolating layer, a second isolating layer, an organic light-emitting material layer and a second electrode. The dielectric material layer is disposed on the first electrode and has a first opening to expose the first electrode. The first isolating layer disposed on the dielectric material layer includes an oxide semiconductor material and has a second opening to expose the first electrode. The second isolating layer is disposed on the first isolating layer and has a third opening to expose the first electrode in the first opening and the first isolating layer in a sidewall of the second opening. The organic light-emitting material layer is in the third opening. The second electrode is on the organic light-emitting layer.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: September 24, 2013
    Assignee: Au Optronics Corporation
    Inventors: Hong-Syu Chen, Shou-Wei Fang, Jen-Yu Lee, Tsung-Hsiang Shih, Hsueh-Hsing Lu, Chia-Yu Chen
  • Patent number: 5224314
    Abstract: A wasted spacer member for spacing construction blocks in a wall formed therefrom, and particularly suited for glass bricks, comprising a pair of parallel cross-shaped or T-shaped positioning elements joined by a length adjustable connecting element including a pair of overlapping elongate connecting bars formed on the inner sides of respective positioning elements and extending perpendicularly therefrom. Each connecting bar has parallel inner and outer sides aligned parallel with a vertical direction, with the inner sides of each connecting bar being mutually abutting along the outer portions thereof. A set of aperture holes are formed at predetermined positions along a first connecting bar, and a cooperating pair of correspondingly spaced, protruding securing buttons are formed along a second connecting bar.
    Type: Grant
    Filed: February 18, 1992
    Date of Patent: July 6, 1993
    Inventor: Syu A. Chen