Abstract: A solid-state imaging device is formed by laminating a photodiode on a surface of a Si semiconductor substrate, a gate electrode layer to read out or transfer electric charge stored on the photodiode, a first inter-layer insulating film made of SiO2, a first metallic wiring layer, a second inter-layer insulating film made of SiO2, a second metallic insulating layer, an undoped silicon glass (USG) film containing hydrogen, and a passivation film containing hydrogen, one by one. Dark currents are reduced by exhausting hydrogen atoms in the USG film and the passivation film for bonding it with dangling bonds on the surface of the Si semiconductor substrate, while applying heat treatments to the imaging device at a temperature of 400° C. or higher.