Abstract: A substrate processing method includes: (A) preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO2 film is formed; (B) supplying, to the substrate, a metal solution containing a second metal element having a higher electronegativity or a lower valence than a first metal element contained in the high-dielectric film; and (C) forming a doping layer, in which the first metal element is substituted with the second metal element, on a surface of the high-dielectric film.

Abstract: A substrate processing method for crystallizing and expanding a silicon film by a thermal treatment, the method including: a holding process including holding, before executing the thermal treatment, a substrate on which the silicon film is formed; and an adhesion process including supplying, to the substrate that is held in the holding process, a solution containing metal to cause the metal to adhere to a surface of the silicon film with an adhesion amount within a range equal to or more than 1.0E10 [atoms/cm2] and equal to or less than 1.0E20 [atoms/cm2].

Abstract: A substrate processing method includes holding a substrate on which a boron-containing silicon film is formed; supplying an oxidative aqueous solution including hydrofluoric acid and nitric acid to the held substrate; and etching the boron-containing silicon film of the substrate with the oxidative aqueous solution.

Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

Abstract: A substrate processing method according to exemplary embodiments includes bringing removal solution obtained by mixing a nitric acid, a strong acid stronger than the nitric acid, and water into contact with a substrate in which a boron monofilm is formed on a film including a silicon-based film so as to remove the boron monofilm from the substrate.

Abstract: A substrate processing method according to exemplary embodiments includes bringing removal solution obtained by mixing a nitric acid, a strong acid stronger than the nitric acid, and water into contact with a substrate in which a boron monofilm is formed on a film including a silicon-based film so as to remove the boron monofilm from the substrate.

Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).