Patents by Inventor Syuichi Kameyama

Syuichi Kameyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • I2L With PNPN injector
    Patent number: 4301382
    Abstract: N- and P-type regions in the middle of a four-region PNPN device are formed in common with respective N- and P-type regions of NPN bipolar transistors. As an injection source, the four-region PNPN device performs on-off control of the NPN bipolar transistors.
    Type: Grant
    Filed: April 21, 1980
    Date of Patent: November 17, 1981
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventor: Syuichi Kameyama