Patents by Inventor Syuitu Matuo

Syuitu Matuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members
    Patent number: 4624735
    Abstract: The constituent members of a semiconductor element-manufacturing apparatus which are formed by depositing a silicon carbide layer on a carbon substrate, and wherein a peak X-ray diffraction on the (200) plane of the silicon carbide layer has a half value width of 0.35.degree. or less as measured by the C.sub.u --K.sub..alpha. ray used in the X-ray diffraction analysis.
    Type: Grant
    Filed: February 11, 1985
    Date of Patent: November 25, 1986
    Assignee: Toshiba Ceramics Co., Ltd.
    Inventors: Masao Koyama, Syuitu Matuo, Chiaki Nakayama, Katsumi Hoshina
  • Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members
    Patent number: 4424193
    Abstract: The constituent members of a semiconductor element-manufacturing apparatus which are formed by depositing a silicon carbide layer on a carbon substrate, and wherein a peak X-ray diffraction on the (200) plane of the silicon carbide layer has a half value width of 0.35.degree. or less as measured by the C.sub.u -K.sub..alpha. ray used in the X-ray diffraction analysis.
    Type: Grant
    Filed: June 25, 1980
    Date of Patent: January 3, 1984
    Assignee: Toshiba Ceramics Co., Ltd.
    Inventors: Masao Koyama, Syuitu Matuo, Chiaki Nakayama, Katsumi Hoshina