Patents by Inventor Syuji Asano

Syuji Asano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing the same
    Patent number: 7298020
    Abstract: A wire (12) is formed on an insulating film (10) on a semiconductor substrate (1). The wire (12) is covered by silicon nitride film (14), inorganic SOG film (20) and TEOS film (21). A thin film resistance element (30) of chromium silicon (CrSi) is formed on the upper surface of the TEOS film (21). The acute angle (taper angle) at which a line connecting the local maximum and minimum points of a step on the upper surface of the TEOS film (21) beneath the area where the thin film resistance element (30) is formed intersects to the surface of the substrate (1) is set to 10° or less.
    Type: Grant
    Filed: March 11, 2004
    Date of Patent: November 20, 2007
    Assignee: DENSO CORPORATION
    Inventors: Syuji Asano, Yoshiaki Nakayama, Koji Eguchi
  • Semiconductor device and method of manufacturing the same
    Publication number: 20040188770
    Abstract: A wire (12) is formed on an insulating film (10) on a semiconductor substrate (1). The wire (12) is covered by silicon nitride film (14), inorganic SOG film (20) and TEOS film (21). A thin film resistance element (30) of chromium silicon (CrSi) is formed on the upper surface of the TEOS film (21). The acute angle (taper angle) at which a line connecting the local maximum and minimum points of a step on the upper surface of the TEOS film (21) beneath the area where the thin film resistance element (30) is formed intersects to the surface of the substrate (1) is set to 10° or less.
    Type: Application
    Filed: March 11, 2004
    Publication date: September 30, 2004
    Applicant: DENSO CORPORATION
    Inventors: Syuji Asano, Yoshiaki Nakayama, Koji Eguchi