Patents by Inventor Syuji Eguchi

Syuji Eguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device comprising stress relaxation layers and method for manufacturing the same
    Patent number: 6710446
    Abstract: A semiconductor device and a manufacturing method thereof, which device includes a semiconductor element arranged to form integrated circuitry, a plurality of electrode pads formed on the side of the integrated circuitry formation surface of the semiconductor element, bump electrodes for electrically connecting to the electrode pads through a conductive layer, and a stress relaxation layer formed between the integrated circuitry formation surface and electrode pads on one hand and the bump electrodes and conductive layer on the other hand, the stress relaxation layer being adhered thereto, wherein more than one third of the stress relaxation layer from a surface thereof is cut away for removal and wherein the stress relaxation layer is subdivided into a plurality of regions. Accordingly, it is possible to provide a semiconductor device capable of offering high density mounting schemes with increased reliability while reducing production costs.
    Type: Grant
    Filed: May 2, 2002
    Date of Patent: March 23, 2004
    Assignee: Renesas Technology Corporation
    Inventors: Akira Nagai, Takumi Ueno, Haruo Akahoshi, Syuji Eguchi, Masahiko Ogino, Toshiya Satoh, Asao Nishimura, Ichiro Anjoh
  • Semiconductor device and method of manufacture thereof
    Publication number: 20020130412
    Abstract: A semiconductor device and a manufacturing method thereof, which device includes a semiconductor element arranged to form integrated circuitry, a plurality of electrode pads formed on the side of the integrated circuitry formation surface of the semiconductor element, bump electrodes for electrically connecting to the electrode pads through a conductive layer, and a stress relaxation layer formed between the integrated circuitry formation surface and electrode pads on one hand and the bump electrodes and conductive layer on the other hand, the stress relaxation layer being adhered thereto, wherein more than one third of the stress relaxation layer from a surface thereof is cut away for removal and wherein the stress relaxation layer is subdivided into a plurality of regions. Accordingly, it is possible to provide a semiconductor device capable of offering high density mounting schemes with increased reliability while reducing production costs.
    Type: Application
    Filed: May 2, 2002
    Publication date: September 19, 2002
    Inventors: Akira Nagai, Takumi Ueno, Haruo Akahoshi, Syuji Eguchi, Masahiko Ogino, Toshiya Satoh, Asao Nishimura, Ichiro Anjoh
  • Semiconductor device and method for manufacturing the same technical field
    Patent number: 6396145
    Abstract: A semiconductor device includes a semiconductor element arranged to form integrated circuitry, a plurality of electrode pads formed on the side of the integrated circuitry formation surface of the in semiconductor element, bump electrodes for external connection electrically connected to the electrode pads through a conductive layer, and a stress relaxation layer formed between the integrated circuitry formation surface and electrode pads on one hand and the bump electrodes and conductive layer on the other hand, the stress relaxation layer being adhered thereto, wherein more than one third of the stress relaxation layer from a surface thereof is cut away for removal and wherein the stress relaxation layer is subdivided into a plurality of regions.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: May 28, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Akira Nagai, Takumi Ueno, Haruo Akahoshi, Syuji Eguchi, Masahiko Ogino, Toshiya Satoh, Asao Nishimura, Ichiro Anjoh