Abstract: There are provided a glass composition suitable for an optical conversion member containing phosphor particles low in heat resistance, an optical conversion member using the glass composition, and an illumination light source using the optical conversion member. A glass composition comprising, in mol % based on oxides, 5 to 35% of Bi2O3, 22 to 80% of B2O3, 10 to 48% of ZnO, and 0 to 4% of Al2O3, and not substantially containing SiO2, wherein a total amount of the Bi2O3 and the ZnO being 15% or more and less than 70%, an optical conversion member using the glass composition, an illumination light source using the optical conversion member, and a liquid crystal display device using the illumination light source are provided.

Abstract: A vacuum insulating glazing includes first and second glass substrates that are stacked with a gap set at a pressure less than an atmospheric pressure, and the gap is sealed peripherally by a sealing. The sealing includes a metal component and a glass layer that bonds the metal component and the glass substrates. A material for the metal component is selected from materials whose tensile strength X (N/mm2) and breaking elongation Y (%) satisfy a relationship Y?0.10X by a room temperature tensile test (tensile speed: 1 mm/min) that is performed after the materials are kept at 490° C. for 40 minutes in an atmosphere.

Abstract: A glass emitting white light in itself, and a light-emitting element and a light-emitting device covered with the glass as stated above are provided. The white light-emitting glass is a glass emitting fluorescence at a region having a wavelength of 380 nm to 750 nm by excitation light with a wavelength of 240 nm to 405 nm, not containing crystal, and containing SnOx (where x=1 to 2, typically x=1 or 2), P2O5, and MnOy (where y=1 to 2, typically y=1 or 2). The light-emitting element and the light-emitting device are made up by covering a main surface of a semiconductor light-emitting element with the glass as stated above.

Abstract: Glass is provided which is capable of covering at a covering treatment temperature of at most 400° C. and which has a low thermal expansion coefficient and excellent weather resistance. Glass comprising, as represented by mol % based on oxides, from 29% to 33% of P2O5, from 43% to 58% of SnO, from 11% to 25% of ZnO, from 0.1% to 2% of Ga2O3, from 0.5% to 5% of CaO, and from 0% to 1% of SrO, provided that the sum X of ZnO, Ga2O3 and CaO is within a range of from 13% to 27%, as represented by mol % based on oxides.

Abstract: A glass emitting white light in itself, and a light-emitting element and a light-emitting device covered with the glass as stated above are provided. The white light-emitting glass is a glass emitting fluorescence at a region having a wavelength of 380 nm to 750 nm by excitation light with a wavelength of 240 nm to 405 nm, not containing crystal, and containing SnOx (where x=1 to 2, typically x=1 or 2), P2O5, and MnOy (where y=1 to 2, typically y=1 or 2). The light-emitting element and the light-emitting device are made up by covering a main surface of a semiconductor light-emitting element with the glass as stated above.

Abstract: A light emitting diode element having a light emitting diode; and a glass covering sealing the light emitting diode is provided. The glass of the covering consists essentially of from 30 to 70 mol% of SnO, from 15 to 50 mol% of P2O5, from 0.1 to 20 mol% of ZnO, from 0 to 10 mol% of SiO2+GeO2, from 0 to 30% of Li2O+Na2O+K2O, and from 0 to 20% of MgO+CaO+SrO+BaO. In an embodiment, a refractive index of the glass of the covering is at least 1.6 at a wavelength of 400nm.

Abstract: The present invention relates to a process for producing a chemically strengthened glass substrate for a display device, the process including a pre-heating step of pre-heating a glass to a pre-heating temperature and subsequently an ion exchange step of immersing the glass in a chemical strengthening liquid, in which the pre-heating temperature in the pre-heating step and a strain point of the glass satisfy: 220° C.?(strain point?pre-heating temperature).

Abstract: Glass is provided which is capable of covering at a covering treatment temperature of at most 400° C. and which has a low thermal expansion coefficient and excellent weather resistance. Glass comprising, as represented by mol % based on oxides, from 29% to 33% of P2O5, from 43% to 58% of SnO, from 11% to 25% of ZnO, from 0.1% to 2% of Ga2O3, from 0.5% to 5% of CaO, and from 0% to 1% of SrO, provided that the sum X of ZnO, Ga2O3 and CaO is within a range of from 13% to 27%, as represented by mol % based on oxides.

Abstract: To provide glass with which a sealing treatment can be carried out at a temperature of at most 400° C. and which does not deteriorate or change in quality for a long time. Glass comprising, as represented by mol % based on oxides, from 27 to 33% of P2O5, from 50 to 70% of SnO, from 0 to 10% of ZnO, from 0.5 to 5% of CaO and from 0 to 5% of B2O3.

Abstract: A glass-covered light-emitting element and a glass-covered light-emitting device are provided, which are covered with a glass having a low glass transition point and a thermal expansion coefficient close to that of the light-emitting element. The glass-covered light-emitting element includes a semiconductor light-emitting element having a principal surface, and a P2O5—ZnO—SnO type glass covering the principal surface of the semiconductor light-emitting element, and the glass consists essentially of, as represented by mol % based on the following oxides, from 20 to 45% of P2O5, from 20 to 50% of ZnO and from 20 to 40% of SnO, and the glass has a glass transition point of at least 290° C. and at most 450° C., and a thermal expansion coefficient of at most 105×10?7/° C.

Abstract: A light emitting diode element having a light emitting diode; and a glass covering sealing the light emitting diode is provided. The glass of the covering consists essentially of from 30 to 70 mol % of SnO, from 15 to 50 mol % of P2O5, from 0.1 to 20 mol % of ZnO, from 0 to 10 mol % of SiO2+GeO2, from 0 to 30% of Li2O+Na2O+K2O, and from 0 to 20% of MgO+CaO+SrO+BaO. In an embodiment, a refractive index of the glass of the covering is at least 1.6 at a wavelength of 400 nm.

Abstract: A method for producing a substrate for an electronic device, that can improve light extraction efficiency, can easily produces and has high liability is provided. The method includes: a step of heat-melting a glass raw material or a glass to produce a molten glass; a forming step of continuously feeding the molten glass to a bath surface of a molten metal bathtub accommodating a molten metal to form a continuous glass ribbon 6; a step of feeding a glass powder M having a desired composition on the continuous glass ribbon 6 and melting or sintering the glass powder M to form a scattering layer; a step of gradually cooling the scattering layer-attached continuous glass ribbon; and a step of cutting the scattering layer-attached continuous glass ribbon gradually cooled to obtain a scattering layer-attached glass substrate.

Abstract: A glass-coated light-emitting element 10 of the invention has a semiconductor light-emitting element 2 having a surface on which no electrode is formed is coated with a glass 1, in which a surface of the glass 1 constitutes a part of a spherical surface broader than a hemispherical surface, the refractive index of the glass 1 at an emission peak wavelength of the semiconductor light-emitting element 2 is 1.7 or more, and the ratio of the diameter of the above-mentioned spherical surface to the maximum diameter of a surface of the semiconductor light-emitting element 2 on which electrodes are formed is 1.8 to 3.5, whereby light emitted from the light-emitting element can be efficiently introduced into a light control unit, and alignment with a lens or a light pipe, which has hitherto been made, becomes unnecessary.

Abstract: A diode chip is sealed by a glass material. There are provided a light emitting diode chip and a glass member in close contact with at least one portion of the surface of the light emitting diode chip. The glass member has a surface shape containing a curved surface at least a portion thereof. The curved surface is preferably a portion of a spherical surface or a spheroidal surface. The glass member has a surface shape containing a spherical portion and a flat portion, and the diode chip is preferably disposed on the flat portion.

Abstract: To provide glass with which a sealing treatment can be carried out at a temperature of at most 400° C. and which does not deteriorate or change in quality for a long time. Glass comprising, as represented by mol % based on oxides, from 27 to 33% of P2O5, from 50 to 70% of SnO, from 0 to 10% of ZnO, from 0.5 to 5% of CaO and from 0 to 5% of B2O3.

Abstract: To provide an alkali-free glass substrate, which has a high Young's modulus, a low linear expansion coefficient, a high strain point and a low density, does not devitrify in the float forming process and is excellent in acid resistance. An alkali-free glass substrate, which contains neither alkali component nor BaO and consists essentially of, as represented by mol % based on oxide, from 57.0 to 65.0% of SiO2, from 10.0 to 12.0% of Al2O3, from 6.0 to 9.0% of B2O3, from 5.0 to 10.0% of MgO, from 5.0 to 10.0% of CaO and from 2.5 to 5.5% of SrO, provided that MgO+CaO+SrO is from 16.0 to 19.0%, MgO/(MgO+CaO+SrO)?0.40, and B2O3/(SiO2+Al2O3+B2O3)?0.12; wherein Young's modulus ?75 GPa; the linear expansion coefficient at from 50 to 350° C. is from 30×10?7/° C. to 40×10?7/° C.; the strain point ?640° C.; the temperature T2 (the viscosity ? satisfies log ?=2)?1,620° C.; the temperature T4 (the viscosity ? satisfies log ?=4)?1,245° C.; the devitrification temperature ?T4; and weight loss per unit area is at most 0.

Abstract: There is provided a glass-covered light-emitting element and a glass-covered light-emitting device, which contain a properly low content of bubbles that reduce transmittance by scattering of visible light, and which are covered with a glass film having a total light transmittance of 85% or more The glass-covered light-emitting element is covered with glass, which is formed of calcined glass frit, which has a softening temperature of 600° C. or less, which has a total light transmittance of 85% or more, which a coefficient of thermal expansion of 70×10?7/° C. to 125×10?7/° C., and which has a content of bubbles having a diameter of 1 ?m or more, the content being 500,000 bubbles/mm3 or less.

Abstract: A glass-covered light-emitting element and a glass-covered light-emitting device are provided, which are covered with a glass having a low glass transition point and a thermal expansion coefficient close to that of the light-emitting element. The glass-covered light-emitting element includes a semiconductor light-emitting element having a principal surface, and a P2O5—ZnO—SnO type glass covering the principal surface of the semiconductor light-emitting element, and the glass consists essentially of, as represented by mol % based on the following oxides, from 20 to 45% of P2O5, from 20 to 50% of ZnO and from 20 to 40% of SnO, and the glass has a glass transition point of at least 290° C. and at most 450° C., and a thermal expansion coefficient of at most 105×10?7/° C.

Abstract: To provide a production process capable of making the transmittance of an optical glass element obtainable by press-molding a TeO2-containing glass high. A process for producing an optical glass element, which comprises press-molding a TeO2-containing glass, wherein the press-molding is carried out in an atmosphere in which the nitrogen partial pressure is at most 102 Pa. The above process for producing an optical glass element, wherein the face of a mold for the press-molding to be in contact with the glass is made of carbon. The above process for producing an optical glass element, wherein the molded glass obtained by the press-molding is held in an oxygen-containing atmosphere at a temperature within a range of at least a temperature lower by 50° C. than the glass transition point of the TeO2-containing glass and at most the softening point of the glass.

Abstract: A glass for encapsulating an optical element that can seal the optical element at a temperature in the vicinity of 500° C., and a glass-encapsulated light-emitting device encapsulated with the glass, are provided. A glass for encapsulating an optical element, which is a glass consisting essentially of, in terms of mol % of oxide, from 35 to 55% of TeO2, from 20 to 50% of B2O3, from 10 to 30% of ZnO, and from 0.1 to 5% of one type or a combination of at least two types selected from the group consisting of Y2O3, La2O3, Gd2O3 and Bi2O3, wherein the value of (B2O3+ZnO)/TeO2 is at least 0.9, the glass contains substantially no fluorine, and when the content of ZnO is at most 15%, the content of TeO2 is at most 46%.