Abstract: A method of manufacturing a semiconductor device, includes: stacking a thermally-decomposable organic material on a surface of a substrate in which a recess is formed; implanting ions into a surface of the organic material stacked in the recess so as to modify the surface of the organic material and form a modified layer on the surface of the organic material; and heating the substrate to a first temperature so as to thermally decompose the organic material under the modified layer and to desorb the organic material through the modified layer so that an air gap is formed between the modified layer and the recess.

Abstract: A substrate processing apparatus includes: a processing container; a stage provided in an interior of the processing container to place a substrate on the stage; an exhaust space arranged around the stage along an inner wall of the processing container; a first exhaust path provided between a processing space above the stage and the exhaust space and having a smaller conductance than the processing space; and a second exhaust path provided between a lower space below the stage and the exhaust space and having a smaller conductance than the processing space. A processing gas supplied into the processing space is exhausted via the first exhaust path, a purge gas supplied into the lower space is exhausted via the second exhaust path, and the second exhaust path is connected to the first exhaust path or to a space that is closer to the exhaust space than the first exhaust path.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes laminating a thermally decomposable organic material on a substrate by supplying a material gas into a container in which the substrate having a first recess and a second recess, which has a wider width than a width of the first recess, are formed, fluidizing the organic material laminated on the substrate by heating the substrate to a first temperature, and removing the organic material laminated in the second recess.

Abstract: A substrate processing apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; an exhaust port arranged around the stage along an inner wall of the processing container; a driver configured to move the stage up and down between a processing position and a transfer position lower than the processing position; a clamp ring that is arranged on a peripheral edge of the substrate on the stage to cover the peripheral edge of the substrate when the stage is at the processing position, and is supported by a shelf provided on a sidewall of the processing container when the stage is at the transfer position; and a pressure regulating mechanism configured to suppress a pressure difference between a space above the substrate on the stage and a space below the stage.

Abstract: A film forming apparatus comprises: a processing chamber in which a substrate is accommodated; a gas supply configured to supply a gas containing a first monomer and a gas containing a second monomer into the processing chamber; a concentration distribution controller configured to control a gas flow within the processing chamber such that a concentration of a mixed gas including the gas containing the first monomer and the gas containing the second monomer on the substrate has a predetermined distribution; and a temperature distribution controller configured to control a temperature distribution of the substrate such that a temperature of a first region of the substrate is higher than a temperature of a second region of the substrate, the concentration of the mixed gas in a region corresponding to the first region being higher than the concentration of the mixed gas in a region corresponding to the second region.

Abstract: A film forming system includes: a film forming apparatus which includes a processing container, a stage provided in the processing container, a structure provided in the processing container and having recesses, and a window provided on a wall surface of the processing container; a measurement device which includes a light emitter, a light receiver, and a measurer configured to measure a light reflectance for each wavelength in the structure based on an intensity of light emitted to the structure and an intensity of light reflected from the structure; and a control device which includes an estimator configured to estimate a thickness of a film formed on a substrate based on the light reflectance for each wavelength in the structure, and a controller configured to stop film formation on the substrate when the estimated thickness of the film reaches a predetermined thickness.

Abstract: A substrate processing apparatus including: a processing container; a stage installed in the processing container and configured to place a substrate thereon; a ceiling plate installed at a position facing the stage in the processing container; a driver configured to raise and lower the stage; an exhaust port formed in a side wall of the processing container and configured to exhaust a gas in the processing container; and a controller configured to control conductance of a space between the exhaust port and a processing space between the stage and the ceiling plate by controlling the driver to adjust a distance between a peripheral edge portion of the stage and a facing member disposed at a position facing the peripheral edge portion in the processing container.

Abstract: A method of manufacturing a semiconductor device, the method including: a first film deposition process of stacking a polymer film on a substrate on which a recess is formed, wherein the polymer film is a film of a polymer having a urea bond and is formed by polymerizing a plurality of kinds of monomers; a second film deposition process of stacking a sealing film on the substrate in a state in which at least a bottom and a sidewall of the recess are covered with the polymer film; and a desorbing process of desorbing and diffusing the polymer film under the sealing film through the sealing film by depolymerizing the polymer film by heating the substrate to a first temperature.

Abstract: A semiconductor device manufacturing method includes burying a void formed in a substrate with a polymer having a urea bond; forming an oxide film on the substrate; and desorbing a depolymerized polymer obtained by depolymerizing the polymer from the void through the oxide film.

Abstract: A substrate processing method includes: a heating process of heating a substrate, which is placed on a stage disposed in a container and has a recess formed on one surface of the substrate, to a first temperature; a depositing process of depositing a thermally decomposable organic material on a front surface of the substrate by supplying a material gas into the container; and a removing process of removing the organic material deposited on a periphery of the recess and a back surface of the substrate, which is opposite to the one surface of the substrate, by holding the substrate at a position spaced apart from the stage and heating the substrate to a second temperature higher than the first temperature.

Abstract: There is provided a substrate processing apparatus including: a processing container having a vacuum atmosphere formed therein; a stage provided within the processing container and configured to place a substrate on the stage; a film-forming gas supply part configured to supply a film-forming gas for forming an organic film on the substrate placed on the stage; and a heating part configured to heat the substrate placed on the stage in a non-contact manner so as to remove a surface portion of the organic film.

Abstract: A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack.

Abstract: A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes laminating a thermally decomposable organic material on a substrate by supplying a material gas into a container in which the substrate having a first recess and a second recess, which has a wider width than a width of the first recess, are formed, fluidizing the organic material laminated on the substrate by heating the substrate to a first temperature, and removing the organic material laminated in the second recess.

Abstract: A method of manufacturing a semiconductor device, includes: stacking a thermally-decomposable organic material on a surface of a substrate in which a recess is formed; implanting ions into a surface of the organic material stacked in the recess so as to modify the surface of the organic material and form a modified layer on the surface of the organic material; and heating the substrate to a first temperature so as to thermally decompose the organic material under the modified layer and to desorb the organic material through the modified layer so that an air gap is formed between the modified layer and the recess.

Abstract: A method of manufacturing a semiconductor memory includes: forming a first lamination on a substrate; forming a first hole through the first lamination; embedding a first sacrificial material including a thermally decomposable organic material in the first hole; forming a recess at an upper portion of the first hole; forming an oxide film in the recess; removing the first sacrificial material under the oxide film; embedding a second sacrificial material on the oxide film in the recess; forming a second lamination on the first lamination and the second sacrificial material; forming a second hole through the second lamination at a position corresponding to the first hole by etching the second lamination in an extension direction of the first hole; and removing the oxide film and the second sacrificial material.

Abstract: A method of manufacturing a semiconductor device includes a first deposition process, a second deposition process, an oxidation process, and a desorption process. In the first deposition process, a thermally decomposable organic material on a substrate in which a recess is formed, is deposited. In the second deposition process, a metal layer is deposited on the organic material by sputtering, which uses a target containing metal. In the oxidation process, the metal layer is oxidized. In the desorption process, an air gap is formed between the oxidized metal layer and the recess by heating the substrate at a predetermined temperature to thermally decompose the organic material to desorb the organic material under the oxidized metal layer through the oxidized metal layer.

Abstract: There is provided a substrate processing apparatus including: a chamber in which a target substrate is accommodated; a first gas supply part configured to supply a gas containing a first monomer, and a gas containing a second monomer, which forms a polymer through a polymerization reaction with the first monomer, into the chamber so as to form a film of the polymer on the target substrate; an exhaust device configured to exhaust a gas inside the chamber; a first exhaust pipe configured to connect the chamber and the exhaust device; and an energy supply device configured to supply an energy with respect to a gas flowing through the first exhaust pipe so as to cause an unreacted component of at least one of the first monomer and the second monomer contained in the gas exhausted from the chamber to be reduced in a molecular weight.

Abstract: There is provided a method of manufacturing a device, which comprises: a preparation step of preparing a workpiece having a recess formed therein; a burying step of burying a sacrificial material composed of a thermally decomposable organic material in the recess; a lamination step of laminating a preliminary sealing film on the sacrificial material buried in the recess; a first removal step of removing the sacrificial material in the recess through the preliminary sealing film, by annealing the workpiece at a first temperature and thermally decomposing the sacrificial material; a processing step of performing a predetermined process on a portion other than the recess in the workpiece, in a state in which the recess is covered with the preliminary sealing film; and a second removal step of removing the preliminary sealing film.

Abstract: A semiconductor device manufacturing method includes laminating a thermally-decomposable organic material on a substrate having a recess formed therein, laminating a silicon nitride film on the organic material, and heating the substrate to a predetermined temperature so as to thermally decompose the organic material, and to desorb the organic material under the silicon nitride film through the silicon nitride film so as to form an air gap between the silicon nitride film and the recess. In laminating the silicon nitride film, the silicon nitride film is laminated on the organic material with microwave plasma in a state in which a temperature of the substrate is maintained at 200 degrees C. or lower.