Abstract: A method for plasma treating an exposed copper surface and dielectric insulating layer in a semiconductor device manufacturing process including providing a semiconductor wafer having a process surface including an exposed copper portion and an exposed dielectric insulating layer portion; plasma treating in a first plasma treatment process, the process surface with a first plasma including ammonia (NH3) and nitrogen (N2) plasma to form a copper nitride layer overlying the exposed copper portion; and, plasma treating in a second plasma treatment process the process surface with a second plasma including oxygen (O2).

Abstract: A method for removing at least one carbon doped oxide layer over a surface to recycle the semiconductor process wafer including providing a semiconductor wafer including a process surface including at least one carbon doped silicon oxide layer; oxidizing the carbon doped oxide layer according to an oxidizing treatment to convert at oxidize at least a portion of the carbon doped oxide layer to produce silicon oxide; and, wet etching the silicon oxide to substantially remove the silicon oxide.