Patents by Inventor Syunji Nishikawa

Syunji Nishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for modifying a film forming surface of a substrate on which a film is to be formed, and method for manufacturing a semiconductor device using the same
    Patent number: 6255230
    Abstract: Disclosed is a method for modifying a film-forming surface of a substrate, which is capable removing a base surface dependency in forming a film on the film-forming surface of the substrate prior to formation of a film by a thermal CVD method using a reactant gas containing an ozone-containing gas containing ozone (O3) in oxygen (O2) and Tetra-Ethyl-Ortho-Silicate. The method comprises the step of modifying the film-forming surface 12a of the substrate 102 by allowing any one of ammonia, hydrazine, an amine, gases thereof and aqueous solutions thereof to contact with the surface of the substrate before forming an insulating film 13 on the surface 12a of the substrate 102.
    Type: Grant
    Filed: November 23, 1999
    Date of Patent: July 3, 2001
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Hiroshi Ikakura, Syunji Nishikawa, Noboru Tokumasu, Takayoshi Azumi