Abstract: A silicon wafer single-side polishing method that can significantly improve the stepped minute defect occurrence rate is provided. The silicon wafer single-side polishing method comprises: a first polishing step of performing polishing on one side of a silicon wafer under a first polishing condition; and a second polishing step of performing polishing on the silicon wafer under a second polishing condition in which at least one of an applied pressure and a relative speed in the first polishing condition is changed, after the first polishing step, wherein a polishing rate ratio according to the first polishing condition is higher than a polishing rate ratio according to the second polishing condition.

Abstract: A silicon wafer single-side polishing method that can significantly improve the stepped minute defect occurrence rate is provided. The silicon wafer single-side polishing method comprises: a first polishing step of performing polishing on one side of a silicon wafer under a first polishing condition; and a second polishing step of performing polishing on the silicon wafer under a second polishing condition in which at least one of an applied pressure and a relative speed in the first polishing condition is changed, after the first polishing step, wherein a polishing rate ratio according to the first polishing condition is higher than a polishing rate ratio according to the second polishing condition.

Abstract: A mirror-finishing chamfer polishing is applied using an abrasive-grain-free polishing solution to a chamfered portion of a semiconductor wafer having an oxide film on a top side or the top and bottom sides of the semiconductor wafer and having no oxide film on the chamfered portion. Further, prior to the mirror-finishing chamfer polishing, a pre-finish mirror chamfer polishing is applied using an abrasive-grain-containing polishing solution to the chamfered portion of the semiconductor wafer having the oxide film on the top side or the top and bottom sides and on the chamfered portion.

Abstract: A method of a polishing a wafer includes: a first polishing step of polishing a surface of the wafer while supplying a rough polishing liquid onto a polishing surface of a rough polishing cloth; subsequent to the first polishing step, a protection film formation step of supplying a protection film formation solution containing a water-soluble polymer to the rough polishing cloth after being used in the first polishing step and bringing the protection film formation solution into contact with the polished surface of the wafer to form a protection film on the polished surface; and a second polishing step of polishing the surface of the wafer where the protection film is formed while supplying a finish polishing liquid to a polishing surface of a finish polishing cloth different from the rough polishing cloth.

Abstract: A method of a polishing a wafer includes: a first polishing step of polishing a surface of the wafer while supplying a rough polishing liquid onto a polishing surface of a rough polishing cloth; subsequent to the first polishing step, a protection film formation step of supplying a protection film formation solution containing a water-soluble polymer to the rough polishing cloth after being used in the first polishing step and bringing the protection film formation solution into contact with the polished surface of the wafer to form a protection film on the polished surface; and a second polishing step of polishing the surface of the wafer where the protection film is formed while supplying a finish polishing liquid to a polishing surface of a finish polishing cloth different from the rough polishing cloth.

Abstract: A mirror-finishing chamfer polishing is applied using an abrasive-grain-free polishing solution to a chamfered portion of a semiconductor wafer having an oxide film on a top side or the top and bottom sides of the semiconductor wafer and having no oxide film on the chamfered portion. Further, prior to the mirror-finishing chamfer polishing, a pre-finish mirror chamfer polishing is applied using an abrasive-grain-containing polishing solution to the chamfered portion of the semiconductor wafer having the oxide film on the top side or the top and bottom sides and on the chamfered portion.