Abstract: A magnetic memory device is provided. The magnetic memory device includes a spin orbit torque (SOT) source configured to generate SOT, and a magnetic fine wire of which one end contacts a main surface of the SOT source. A direction of SOT generated by the SOT source is perpendicular to a direction in which the magnetic fine wire extends, and a magnetic domain in the magnetic fine wire is parallel to the direction in which the magnetic fine wire extends.

Abstract: A magnetic memory device includes a first magnetic memory device, a second magnetic memory device, a pulse power supplying current pulses to the first and second magnetic memory devices; and a switch configured to selectively connect the pulse power to one of the first and second magnetic memory devices. A resistance value of an MTJ device composed of the first fixed layer, the first non-magnetic layer, and the free layer is different from a resistance value of a MTJ device composed of the second fixed layer, the second non-magnetic layer, and the free layer.

Abstract: A magnetic memory device includes a magnetic body having magnetic anisotropy and an insulator including a ferromagnetic element. The magnetic body is structurally connected to both ends of the ferromagnetic insulator, and the magnetic body and the ferromagnetic insulator form a ring shape. An easy axis of the magnetic body is directed in a direction parallel to an opening surface of the ring shape in a whole of the magnetic body.

Abstract: A magnetic memory device includes a first magnetic structure having a magnetic anisotropy, a read electrode that is on an end of the first magnetic structure and configured to sense a first magnetic moment of the first magnetic structure and to convert the first magnetic moment to an electric signal, a second magnetic structure spaced apart from the first magnetic structure, the second magnetic structure having a magnetic anisotropy, and a write electrode that is on an end of the second magnetic structure and configured to change a second magnetic moment of the second magnetic structure, based on the electric signal. The magnetic memory device executes operations of writing, moving, and reading data on almost the entire region of the magnetic structure in a more efficient manner, compared with the conventional magnetic memory device.

Abstract: A magnetic memory device includes a first fixed layer maintaining a particular magnetization direction, a first non-magnetic layer, a free layer having perpendicular magnetic anisotropy and a variable magnetization direction, a second non-magnetic layer, and a second fixed layer maintaining a separate particular magnetization direction that is opposite to the particular magnetization direction of the first fixed layer. A resistance value of a first magnetic tunnel junction (MTJ) element including the first fixed layer, the first non-magnetic layer, and the free layer is different from that of a second MTJ element that includes the second fixed layer, the second non-magnetic layer, and the free layer.

Abstract: A race track magnetic memory device includes a magnetic fine wire having a plurality of magnetic domains, a magnetic tunnel junction element comprising a pinned layer and an insulating layer, and a spin-orbit torque (SOT) generator. An easy axis of the magnetic fine wire is substantially perpendicular to a contact surface of the magnetic fine wire and the SOT generator. The magnetic tunnel junction element and the SOT generator are disposed on a magnetic domain write region of the magnetic fine wire. Data is written by generating spin-transfer torque at magnetization of the magnetic domain write region by flowing a first current in the magnetic tunnel junction element and by generating spin-orbit torque at the magnetization of the magnetic domain write region by flowing a second current in the SOT generator.

Abstract: A magnetic memory device is provided. The magnetic memory device includes a spin orbit torque (SOT) source configured to generate SOT, and a magnetic fine wire of which one end contacts a main surface of the SOT source. A direction of SOT generated by the SOT source is perpendicular to a direction in which the magnetic fine wire extends, and a magnetic domain in the magnetic fine wire is parallel to the direction in which the magnetic fine wire extends.

Abstract: A magnetic memory device includes a magnetic body having magnetic anisotropy and an insulator including a ferromagnetic element. The magnetic body is structurally connected to both ends of the ferromagnetic insulator, and the magnetic body and the ferromagnetic insulator form a ring shape. An easy axis of the magnetic body is directed in a direction parallel to an opening surface of the ring shape in a whole of the magnetic body.

Abstract: A race track magnetic memory device includes a magnetic fine wire having a plurality of magnetic domains, a magnetic tunnel junction element comprising a pinned layer and an insulating layer, and a spin-orbit torque (SOT) generator. An easy axis of the magnetic fine wire is substantially perpendicular to a contact surface of the magnetic fine wire and the SOT generator. The magnetic tunnel junction element and the SOT generator are disposed on a magnetic domain write region of the magnetic fine wire. Data is written by generating spin-transfer torque at magnetization of the magnetic domain write region by flowing a first current in the magnetic tunnel junction element and by generating spin-orbit torque at the magnetization of the magnetic domain write region by flowing a second current in the SOT generator.

Abstract: A magnetic memory device includes a first magnetic structure having a magnetic anisotropy, a read electrode that is on an end of the first magnetic structure and configured to sense a first magnetic moment of the first magnetic structure and to convert the first magnetic moment to an electric signal, a second magnetic structure spaced apart from the first magnetic structure, the second magnetic structure having a magnetic anisotropy, and a write electrode that is on an end of the second magnetic structure and configured to change a second magnetic moment of the second magnetic structure, based on the electric signal. The magnetic memory device executes operations of writing, moving, and reading data on almost the entire region of the magnetic structure in a more efficient manner, compared with the conventional magnetic memory device.