Patents by Inventor Syuuhei Hayashida

Syuuhei Hayashida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
    Patent number: 9297586
    Abstract: A method of generating cracks in a polycrystalline silicon rod, comprising: heating a polycrystalline silicon rod; and subsequently performing local portion cooling of the polycrystalline silicon rod to apply a refrigerant fluid onto a spot-like area of a surface of the polycrystalline silicon rod.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: March 29, 2016
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventor: Syuuhei Hayashida
  • METHOD OF GENERATING CRACKS IN POLYCRYSTALLINE SILICON ROD AND CRACK GENERATING APPARATUS
    Publication number: 20140000318
    Abstract: A method of generating cracks in a polycrystalline silicon rod, comprising: heating a polycrystalline silicon rod; and subsequently performing local portion cooling of the polycrystalline silicon rod to apply a refrigerant fluid onto a spot-like area of a surface of the polycrystalline silicon rod.
    Type: Application
    Filed: June 24, 2013
    Publication date: January 2, 2014
    Applicant: Mitsubishi Materials Corporation
    Inventor: Syuuhei Hayashida
  • Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
    Patent number: 8490901
    Abstract: A method of generating cracks in a polycrystalline silicon rod, comprising: heating a polycrystalline silicon rod; and subsequently performing local portion cooling of the polycrystalline silicon rod to apply a refrigerant fluid onto a spot-like area of a surface of the polycrystalline silicon rod.
    Type: Grant
    Filed: July 23, 2010
    Date of Patent: July 23, 2013
    Assignee: Mitsubishi Materials Corporation
    Inventor: Syuuhei Hayashida
  • Method of generating cracks in polycrystalline silicon rod and crack generating apparatus
    Publication number: 20110024533
    Abstract: A method of generating cracks in a polycrystalline silicon rod, comprising: heating a polycrystalline silicon rod; and subsequently performing local portion cooling of the polycrystalline silicon rod to apply a refrigerant fluid onto a spot-like area of a surface of the polycrystalline silicon rod.
    Type: Application
    Filed: July 23, 2010
    Publication date: February 3, 2011
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventor: Syuuhei Hayashida