Abstract: To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. (In the general formula (1), X represents —SH, —COOH, —NH2, —PO(OH)2, or —SO2(OH), A1 represents —S, —COO, —PO(OH)O, or —SO2(O), and n is an integer of 1 to 3. B1 represents Li, Na, or K.

Abstract: To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. (In the general formula (1), X represents —SH, —COOH, —NH2, —PO(OH)2, or —SO2(OH), A1 represents —S, —COO, —PO(OH)O, or —SO2(O), and n is an integer of 1 to 3. B1 represents Li, Na, or K.

Abstract: An imaging device including a photoelectric conversion layer including a semiconductor nanoparticle (100) including a particle body (101) and a monoatomic ligand (102). The particle body (101) includes a semiconductor core (103) including at least two or more elements selected from a Group I element, a Group III element, a Group V element, and a Group VI element. The monoatomic ligand (102) is bonded to a surface of the particle body (101).

Abstract: A manufacturing method of a quantum dot ensemble of the present disclosure is a manufacturing method of a quantum dot ensemble including a plurality of core-shell quantum dots 10A that each includes a core 10B including a compound semiconductor, and a shell 10C including a compound semiconductor and covering the core, and a ligand 10D coordinated to the shell, and the manufacturing method includes mixing a core material, a shell material, and the ligand in a solvent and thereafter performing heating to thereby form the core-shell quantum dots, coordinate the ligand to the shell, and cleave the ligand.

Abstract: It is an object of the present technology to provide a semiconductor film capable of further improving photoelectric conversion efficiency. There is provided a semiconductor film containing semiconductor nanoparticles and sulfur, the semiconductor nanoparticles having a core-shell structure, the core portion containing a compound represented by the following general formula (1), the shell portion containing ZnS, the sulfur coordinating to the semiconductor nanoparticles. (Chem. 1) Cuy1Inz1A1(y1+3z1)/2 ??(1) (In the general formula (1), y1 satisfies a relationship of 0<y1?20, z1 satisfies a relationship of 0<z1?20, and A1 represents S, Se, or Te.

Abstract: A photoelectric conversion device of an embodiment of the technology includes: a first electrode and a second electrode facing each other; a photoelectric conversion layer provided between the first electrode and the second electrode; and a buffer layer provided between the first electrode and the photoelectric conversion layer, and having an interface, to which an organic molecule or a halogen element is coordinated, with the photoelectric conversion layer.

Abstract: To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. (In the general formula (1), X represents —SH, —COOH, —NH2, —PO(OH)2, or —SO2(OH), A1 represents —S, —COO, —PO(OH)O, or —SO2(O), and n is an integer of 1 to 3. B1 represents Li, Na, or K.

Abstract: A negative electrode active material includes a core particle comprising silicon; and at least one metal element selected from the group consisting of: Ge, Sn, Ni, Mo, W, Ag, Pd, Cu, Bi, Fe, Co, Mn, Cr, V, Ga, B, Sb, In, Te, Cd, Rh, Ru, Nb, Ta, Re, Os, Ir, Pt, Pb and P. The negative electrode active material has an elemental composition that varies continuously from a center of the core particle to a surface of the core particle. A negative electrode, a battery, an electric vehicle, an electric storage apparatus, an electronic apparatus and a power storage system each include the negative electrode active material.

Abstract: A photoelectric conversion device of an embodiment of the technology includes: a first electrode and a second electrode facing each other; a photoelectric conversion layer provided between the first electrode and the second electrode; and a buffer layer provided between the first electrode and the photoelectric conversion layer, and having an interface, to which an organic molecule or a halogen element is coordinated, with the photoelectric conversion layer.

Abstract: There is provided a negative electrode active material including a core particle comprising silicon; and at least one metal element selected from the group consisting of: Ge, Sn, Ni, Mo, W, Ag, Pd, Cu, Bi, Fe, Co, Mn, Cr, V, Ga, B, Sb, In, Te, Cd, Rh, Ru, Nb, Ta, Re, Os, Ir, Pt, Pb and P. The negative electrode active material has an elemental composition that varies continuously from a center of the core particle to a surface of the core particle. There are also provided a negative electrode, a battery, an electric vehicle, an electric storage apparatus, an electronic apparatus and a power storage system each including the negative electrode active material.