Patents by Inventor Syuusaku Kido

Syuusaku Kido has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7554207
    Abstract: In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.
    Type: Grant
    Filed: December 7, 2005
    Date of Patent: June 30, 2009
    Assignee: NEC LCD Technologies, Ltd.
    Inventors: Tsuyoshi Katoh, Syuusaku Kido, Akitoshi Maeda
  • Patent number: 7532270
    Abstract: A method for manufacturing a liquid crystal display that provides a wide viewing angle and in which its manufacturing processes are shortened and high reliability is provided. The method includes the steps of forming a gate electrode metal layer and forming a gate electrode by patterning using photolithography; forming an interlayer insulating film, an a?Si layer, an n+ a?Si layer, and a drain electrode metal layer and forming a drain line and an island by performing patterning, ashing processing, reflow processing using photolithography, and peeling; forming an insulating film on a transparent insulating substrate and forming an insulating film contact used to provide a connection to a source electrode of an island at a specified position by patterning or a printing method; forming a transparent conductive film and forming a pixel electrode and common electrode by patterning using photolithography.
    Type: Grant
    Filed: January 25, 2008
    Date of Patent: May 12, 2009
    Assignee: NEC LCD Technologies, Ltd.
    Inventors: Yoshiaki Hashimoto, Hiroaki Tanaka, Shigeru Kimura, Syuusaku Kido
  • Publication number: 20080124825
    Abstract: A method for manufacturing a liquid crystal display that provides a wide viewing angle and in which its manufacturing processes are shortened and high reliability is provided. The method includes a process of forming a gate electrode metal layer, gate insulator, and a—Si layer and forming an island by patterning using photolithography, a process of forming an interlayer insulating film and drain electrode metal layer and forming a drain line by patterning using photolithography, a process of forming an organic insulating film and forming an organic insulating contact used to provide a connection to a source electrode and a drain electrode at a specified position by photolithography, and a process of forming a transparent conductive layer and forming a pixel electrode and common electrode by patterning using photolithography.
    Type: Application
    Filed: January 25, 2008
    Publication date: May 29, 2008
    Inventors: Yoshiaki Hashimoto, Hiroaki Tanaka, Shigeru Kimura, Syuusaku Kido
  • Patent number: 7041522
    Abstract: In a manufacturing method of a color liquid crystal display device, a first conductive film is formed on a transparent insulating substrate to form a gate electrode and a gate bus line (first PR process). A gate insulating film, a semiconductor layer, an ohmic layer, and a second conductive film are deposited to form an island of a thin film transistor and a drain bus line (second PR process). Then, color filters in respective three colors are formed in their respective predetermined regions on the transparent insulating substrate in succession (third through fifth PR processes). A black matrix is formed, and a drain electrode and a source electrode are formed in the island by removing the second conductive film and ohmic layer on a region corresponding to the channel region by using the black matrix as a mask (sixth PR process). Then, a planarization film and a pixel electrode are formed (seventh and eighth PR processes).
    Type: Grant
    Filed: January 4, 2005
    Date of Patent: May 9, 2006
    Assignee: NEC LCD Technologies, Ltd.
    Inventors: Hiroaki Tanaka, Michiaki Sakamoto, Takahiko Watanabe, Yoshiaki Hashimoto, Syuusaku Kido
  • Publication number: 20060081870
    Abstract: In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.
    Type: Application
    Filed: December 7, 2005
    Publication date: April 20, 2006
    Applicant: NEC LCD TECHNOLOGIES, LTD.
    Inventors: Tsuyoshi Katoh, Syuusaku Kido, Akitoshi Maeda
  • Patent number: 7012029
    Abstract: In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.
    Type: Grant
    Filed: December 29, 2003
    Date of Patent: March 14, 2006
    Assignee: NEC LCD Technologies, Ltd.
    Inventors: Tsuyoshi Katoh, Syuusaku Kido, Akitoshi Maeda
  • Publication number: 20050117082
    Abstract: In a manufacturing method of a color liquid crystal display device, a first conductive film is formed on a transparent insulating substrate to form a gate electrode and a gate bus line (first PR process). A gate insulating film, a semiconductor layer, an ohmic layer, and a second conductive film are deposited to form an island of a thin film transistor and a drain bus line (second PR process). Then, color filters in respective three colors are formed in their respective predetermined regions on the transparent insulating substrate in succession (third through fifth PR processes). A black matrix is formed, and a drain electrode and a source electrode are formed in the island by removing the second conductive film and ohmic layer on a region corresponding to the channel region by using the black matrix as a mask (sixth PR process). Then, a planarization film and a pixel electrode are formed (seventh and eighth PR processes).
    Type: Application
    Filed: January 4, 2005
    Publication date: June 2, 2005
    Applicant: NEC LCD TECHNOLOGIES, LTD.
    Inventors: Hiroaki Tanaka, Michiaki Sakamoto, Takahiko Watanabe, Yoshiaki Hashimoto, Syuusaku Kido
  • Patent number: 6897927
    Abstract: In a manufacturing method of a color liquid crystal display device, a first conductive film is formed on a transparent insulating substrate to form a gate electrode and a gate bus line (first PR process). A gate insulating film, a semiconductor layer, an ohmic layer, and a second conductive film are deposited to form an island of a thin film transistor and a drain bus line (second PR process). Then, color filters in respective three colors are formed in their respective predetermined regions on the transparent insulating substrate in succession (third through fifth PR processes). A black matrix is formed, and a drain electrode and a source electrode are formed in the island by removing the second conductive film and ohmic layer on a region corresponding to the channel region by using the black matrix as a mask (sixth PR process). Then, a planarization film and a pixel electrode are formed (seventh and eighth PR processes).
    Type: Grant
    Filed: May 31, 2001
    Date of Patent: May 24, 2005
    Assignee: NEC LCD Technologies, Ltd.
    Inventors: Hiroaki Tanaka, Michiaki Sakamoto, Takahiko Watanabe, Yoshiaki Hashimoto, Syuusaku Kido
  • Publication number: 20040173567
    Abstract: In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.
    Type: Application
    Filed: December 29, 2003
    Publication date: September 9, 2004
    Inventors: Tsuyoshi Katoh, Syuusaku Kido, Akitoshi Maeda
  • Patent number: 6515719
    Abstract: A liquid crystal display apparatus includes a first substrate, a second substrate and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes on a surface facing the second substrate, a plurality of gate bus lines extending into a row direction, a plurality of drain bus lines extending into a column direction, and a plurality of pixels arranged in matrix.
    Type: Grant
    Filed: June 11, 2001
    Date of Patent: February 4, 2003
    Assignee: NEC Corporation
    Inventors: Hirotaka Yamaguchi, Hiroaki Tanaka, Seiji Suzuki, Hiroaki Matsuyama, Takahiko Watanabe, Yoshihiko Hirai, Masayoshi Suzuki, Toshiya Ishii, Teruaki Suzuki, Syuusaku Kido
  • Publication number: 20020158994
    Abstract: A method for manufacturing a liquid crystal display that provides a wide viewing angle and in which its manufacturing processes are shortened and high reliability is provided. The method includes a process of forming a gate electrode metal layer, gate insulator, and a-Si layer and forming an island by patterning using photolithography, a process of forming an interlayer insulating film and drain electrode metal layer and forming a drain line by patterning using photolithography, a process of forming an organic insulating film and forming an organic insulating contact used to provide a connection to a source electrode and a drain electrode al a specified position by photolithography, and a process of forming a transparent conductive layer and forming a pixel electrode and common electrode by patterning using photolithography.
    Type: Application
    Filed: April 23, 2002
    Publication date: October 31, 2002
    Applicant: NEC CORPORATION
    Inventors: Yoshiaki Hashimoto, Hiroaki Tanaka, Shigeru Kimura, Syuusaku Kido
  • Publication number: 20020159010
    Abstract: A method for manufacturing a reflective-type liquid crystal display which is capable of reducing a number of processes for a thin film transistor used in the reflective-type liquid crystal display. A reflective electrode to be connected to a source electrode of the thin film transistor and a terminal portion connecting electrode to be connected to a terminal portion lower metal film are simultaneously formed on an organic insulating film having convex and concave portions. As a material for the reflective electrode and the terminal portion lower metal film, an Al—Nd (Aluminum—Neodymium) containing 0.9% or more by atom of Nd having excellent corrosion resistance is used.
    Type: Application
    Filed: April 26, 2002
    Publication date: October 31, 2002
    Applicant: NEC CORPORATION
    Inventors: Akitoshi Maeda, Kyounei Yasuda, Hiroaki Tanaka, Syuusaku Kido
  • Publication number: 20010052949
    Abstract: A liquid crystal display apparatus includes a first substrate, a second substrate and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes on a surface facing the second substrate, a plurality of gate bus lines extending into a row direction, a plurality of drain bus lines extending into a column direction, and a plurality of pixels arranged in matrix.
    Type: Application
    Filed: June 11, 2001
    Publication date: December 20, 2001
    Inventors: Hirotaka Yamaguchi, Hiroaki Tanaka, Seiji Suzuki, Hiroaki Matsuyama, Takahiko Watanabe, Yoshihiko Hirai, Masayoshi Suzuki, Toshiya Ishii, Teruaki Suzuki, Syuusaku Kido
  • Publication number: 20010048491
    Abstract: In a manufacturing method of a color liquid crystal display device, a first conductive film is formed on a transparent insulating substrate to form a gate electrode and a gate bus line (first PR process). A gate insulating film, a semiconductor layer, an ohmic layer, and a second conductive film are deposited to form an island of a thin film transistor and a drain bus line (second PR process). Then, color filters in respective three colors are formed in their respective predetermined regions on the transparent insulating substrate in succession (third through fifth PR processes). A black matrix is formed, and a drain electrode and a source electrode are formed in the island by removing the second conductive film and ohmic layer on a region corresponding to the channel region by using the black matrix as a mask (sixth PR process). Then, a planarization film and a pixel electrode are formed (seventh and eighth PR processes).
    Type: Application
    Filed: May 31, 2001
    Publication date: December 6, 2001
    Applicant: NEC Corporation
    Inventors: Hiroaki Tanaka, Michiaki Sakamoto, Takahiko Watanabe, Yoshiaki Hashimoto, Syuusaku Kido