Patents by Inventor Syuusaku Kido
Syuusaku Kido has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7554207Abstract: In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.Type: GrantFiled: December 7, 2005Date of Patent: June 30, 2009Assignee: NEC LCD Technologies, Ltd.Inventors: Tsuyoshi Katoh, Syuusaku Kido, Akitoshi Maeda
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Patent number: 7532270Abstract: A method for manufacturing a liquid crystal display that provides a wide viewing angle and in which its manufacturing processes are shortened and high reliability is provided. The method includes the steps of forming a gate electrode metal layer and forming a gate electrode by patterning using photolithography; forming an interlayer insulating film, an a?Si layer, an n+ a?Si layer, and a drain electrode metal layer and forming a drain line and an island by performing patterning, ashing processing, reflow processing using photolithography, and peeling; forming an insulating film on a transparent insulating substrate and forming an insulating film contact used to provide a connection to a source electrode of an island at a specified position by patterning or a printing method; forming a transparent conductive film and forming a pixel electrode and common electrode by patterning using photolithography.Type: GrantFiled: January 25, 2008Date of Patent: May 12, 2009Assignee: NEC LCD Technologies, Ltd.Inventors: Yoshiaki Hashimoto, Hiroaki Tanaka, Shigeru Kimura, Syuusaku Kido
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Publication number: 20080124825Abstract: A method for manufacturing a liquid crystal display that provides a wide viewing angle and in which its manufacturing processes are shortened and high reliability is provided. The method includes a process of forming a gate electrode metal layer, gate insulator, and a—Si layer and forming an island by patterning using photolithography, a process of forming an interlayer insulating film and drain electrode metal layer and forming a drain line by patterning using photolithography, a process of forming an organic insulating film and forming an organic insulating contact used to provide a connection to a source electrode and a drain electrode at a specified position by photolithography, and a process of forming a transparent conductive layer and forming a pixel electrode and common electrode by patterning using photolithography.Type: ApplicationFiled: January 25, 2008Publication date: May 29, 2008Inventors: Yoshiaki Hashimoto, Hiroaki Tanaka, Shigeru Kimura, Syuusaku Kido
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Patent number: 7041522Abstract: In a manufacturing method of a color liquid crystal display device, a first conductive film is formed on a transparent insulating substrate to form a gate electrode and a gate bus line (first PR process). A gate insulating film, a semiconductor layer, an ohmic layer, and a second conductive film are deposited to form an island of a thin film transistor and a drain bus line (second PR process). Then, color filters in respective three colors are formed in their respective predetermined regions on the transparent insulating substrate in succession (third through fifth PR processes). A black matrix is formed, and a drain electrode and a source electrode are formed in the island by removing the second conductive film and ohmic layer on a region corresponding to the channel region by using the black matrix as a mask (sixth PR process). Then, a planarization film and a pixel electrode are formed (seventh and eighth PR processes).Type: GrantFiled: January 4, 2005Date of Patent: May 9, 2006Assignee: NEC LCD Technologies, Ltd.Inventors: Hiroaki Tanaka, Michiaki Sakamoto, Takahiko Watanabe, Yoshiaki Hashimoto, Syuusaku Kido
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Publication number: 20060081870Abstract: In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.Type: ApplicationFiled: December 7, 2005Publication date: April 20, 2006Applicant: NEC LCD TECHNOLOGIES, LTD.Inventors: Tsuyoshi Katoh, Syuusaku Kido, Akitoshi Maeda
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Patent number: 7012029Abstract: In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.Type: GrantFiled: December 29, 2003Date of Patent: March 14, 2006Assignee: NEC LCD Technologies, Ltd.Inventors: Tsuyoshi Katoh, Syuusaku Kido, Akitoshi Maeda
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Publication number: 20050117082Abstract: In a manufacturing method of a color liquid crystal display device, a first conductive film is formed on a transparent insulating substrate to form a gate electrode and a gate bus line (first PR process). A gate insulating film, a semiconductor layer, an ohmic layer, and a second conductive film are deposited to form an island of a thin film transistor and a drain bus line (second PR process). Then, color filters in respective three colors are formed in their respective predetermined regions on the transparent insulating substrate in succession (third through fifth PR processes). A black matrix is formed, and a drain electrode and a source electrode are formed in the island by removing the second conductive film and ohmic layer on a region corresponding to the channel region by using the black matrix as a mask (sixth PR process). Then, a planarization film and a pixel electrode are formed (seventh and eighth PR processes).Type: ApplicationFiled: January 4, 2005Publication date: June 2, 2005Applicant: NEC LCD TECHNOLOGIES, LTD.Inventors: Hiroaki Tanaka, Michiaki Sakamoto, Takahiko Watanabe, Yoshiaki Hashimoto, Syuusaku Kido
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Patent number: 6897927Abstract: In a manufacturing method of a color liquid crystal display device, a first conductive film is formed on a transparent insulating substrate to form a gate electrode and a gate bus line (first PR process). A gate insulating film, a semiconductor layer, an ohmic layer, and a second conductive film are deposited to form an island of a thin film transistor and a drain bus line (second PR process). Then, color filters in respective three colors are formed in their respective predetermined regions on the transparent insulating substrate in succession (third through fifth PR processes). A black matrix is formed, and a drain electrode and a source electrode are formed in the island by removing the second conductive film and ohmic layer on a region corresponding to the channel region by using the black matrix as a mask (sixth PR process). Then, a planarization film and a pixel electrode are formed (seventh and eighth PR processes).Type: GrantFiled: May 31, 2001Date of Patent: May 24, 2005Assignee: NEC LCD Technologies, Ltd.Inventors: Hiroaki Tanaka, Michiaki Sakamoto, Takahiko Watanabe, Yoshiaki Hashimoto, Syuusaku Kido
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Publication number: 20040173567Abstract: In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.Type: ApplicationFiled: December 29, 2003Publication date: September 9, 2004Inventors: Tsuyoshi Katoh, Syuusaku Kido, Akitoshi Maeda
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Patent number: 6515719Abstract: A liquid crystal display apparatus includes a first substrate, a second substrate and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes on a surface facing the second substrate, a plurality of gate bus lines extending into a row direction, a plurality of drain bus lines extending into a column direction, and a plurality of pixels arranged in matrix.Type: GrantFiled: June 11, 2001Date of Patent: February 4, 2003Assignee: NEC CorporationInventors: Hirotaka Yamaguchi, Hiroaki Tanaka, Seiji Suzuki, Hiroaki Matsuyama, Takahiko Watanabe, Yoshihiko Hirai, Masayoshi Suzuki, Toshiya Ishii, Teruaki Suzuki, Syuusaku Kido
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Publication number: 20020158994Abstract: A method for manufacturing a liquid crystal display that provides a wide viewing angle and in which its manufacturing processes are shortened and high reliability is provided. The method includes a process of forming a gate electrode metal layer, gate insulator, and a-Si layer and forming an island by patterning using photolithography, a process of forming an interlayer insulating film and drain electrode metal layer and forming a drain line by patterning using photolithography, a process of forming an organic insulating film and forming an organic insulating contact used to provide a connection to a source electrode and a drain electrode al a specified position by photolithography, and a process of forming a transparent conductive layer and forming a pixel electrode and common electrode by patterning using photolithography.Type: ApplicationFiled: April 23, 2002Publication date: October 31, 2002Applicant: NEC CORPORATIONInventors: Yoshiaki Hashimoto, Hiroaki Tanaka, Shigeru Kimura, Syuusaku Kido
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Publication number: 20020159010Abstract: A method for manufacturing a reflective-type liquid crystal display which is capable of reducing a number of processes for a thin film transistor used in the reflective-type liquid crystal display. A reflective electrode to be connected to a source electrode of the thin film transistor and a terminal portion connecting electrode to be connected to a terminal portion lower metal film are simultaneously formed on an organic insulating film having convex and concave portions. As a material for the reflective electrode and the terminal portion lower metal film, an Al—Nd (Aluminum—Neodymium) containing 0.9% or more by atom of Nd having excellent corrosion resistance is used.Type: ApplicationFiled: April 26, 2002Publication date: October 31, 2002Applicant: NEC CORPORATIONInventors: Akitoshi Maeda, Kyounei Yasuda, Hiroaki Tanaka, Syuusaku Kido
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Publication number: 20010052949Abstract: A liquid crystal display apparatus includes a first substrate, a second substrate and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes on a surface facing the second substrate, a plurality of gate bus lines extending into a row direction, a plurality of drain bus lines extending into a column direction, and a plurality of pixels arranged in matrix.Type: ApplicationFiled: June 11, 2001Publication date: December 20, 2001Inventors: Hirotaka Yamaguchi, Hiroaki Tanaka, Seiji Suzuki, Hiroaki Matsuyama, Takahiko Watanabe, Yoshihiko Hirai, Masayoshi Suzuki, Toshiya Ishii, Teruaki Suzuki, Syuusaku Kido
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Publication number: 20010048491Abstract: In a manufacturing method of a color liquid crystal display device, a first conductive film is formed on a transparent insulating substrate to form a gate electrode and a gate bus line (first PR process). A gate insulating film, a semiconductor layer, an ohmic layer, and a second conductive film are deposited to form an island of a thin film transistor and a drain bus line (second PR process). Then, color filters in respective three colors are formed in their respective predetermined regions on the transparent insulating substrate in succession (third through fifth PR processes). A black matrix is formed, and a drain electrode and a source electrode are formed in the island by removing the second conductive film and ohmic layer on a region corresponding to the channel region by using the black matrix as a mask (sixth PR process). Then, a planarization film and a pixel electrode are formed (seventh and eighth PR processes).Type: ApplicationFiled: May 31, 2001Publication date: December 6, 2001Applicant: NEC CorporationInventors: Hiroaki Tanaka, Michiaki Sakamoto, Takahiko Watanabe, Yoshiaki Hashimoto, Syuusaku Kido