Abstract: A semiconductor laser device has a pair of cladding layers with an active layer interposed therebetween. At least one of the cladding layers is of the same composition through the entire region of the cladding layer, excluding a dopant in the cladding layer, and has a stripe portion different in conductivity type from adjacent portions.

Abstract: A semiconductor laser device has a pair of cladding layers with an active layer interposed therebetween. At least one of the cladding layers is of the same composition through the entire region of the cladding layer, excluding a dopant in the cladding layer, and has a stripe portion different in conductivity type from adjacent portions.

Abstract: There is provided a stripe waveguide structure type semiconductor laser device capable of preventing the occurrence of unevenness on the side surface of a channel and a fabricating method therefor. An etching stop layer 1 is formed under a second upper clad layer 2. This etching stop layer 1 is constructed of a GaAs layer 1a, an Al0.5Ga0.5As layer 1b formed under this GaAs layer 1a and a GaAs layer 1c formed under this Al0.5Ga0.5As layer 1b. With this arrangement, the unevenness of the side surface of the channel formed of a GaAs layer 3 and the second upper clad layer 2 can be controlled.

Abstract: In a semiconductor laser element having a semiconductor substrate, and a crystal layer formed on a main surface of the semiconductor substrate, the crystal layer having in its inside a waveguide, a light-emitting point alignment mark is provided on an intersection line of an electrode surface of the semiconductor laser element with a plane which includes the waveguide and which is perpendicular to the electrode surface. The light-emitting point alignment mark having a length in a width direction of the semiconductor laser element of not more than 20 &mgr;m. A visually recognizable direction indicating mark is also provided on the same side as the light-emitting point alignment mark in a direction in which the waveguide extends.

Abstract: There is provided a stripe waveguide structure type semiconductor laser device capable of preventing the occurrence of unevenness on the side surface of a channel and a fabricating method therefor. An etching stop layer 1 is formed under a second upper clad layer 2. This etching stop layer 1 is constructed of a GaAs layer 1a, an Al0.5Ga0.5As layer 1b formed under this GaAs layer 1a and a GaAs layer 1c formed under this Al0.5Ga0.5As layer 1b. With this arrangement, the unevenness of the side surface of the channel formed of a GaAs layer 3 and the second upper clad layer 2 can be controlled.

Abstract: In a semiconductor laser element having a semiconductor substrate, and a crystal layer formed on a main surface of the semiconductor substrate, the crystal layer having in its inside a waveguide, a light-emitting point alignment mark is provided on an intersection line of an electrode surface of the semiconductor laser element with a plane which includes the waveguide and which is perpendicular to the electrode surface. The light-emitting point alignment mark having a length in a width direction of the semiconductor laser element of not more than 20 &mgr;m. A visually recognizable direction indicating mark is also provided on the same side as the light-emitting point alignment mark in a direction in which the waveguide extends.