Patents by Inventor Sz-Chi Li

Sz-Chi Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230094400
    Abstract: A capacitor structure including a substrate, at least one first dielectric layer, at least one second dielectric layer, a capacitor, and an interconnect structure is provided. The substrate includes a capacitor region and a non-capacitor region. The first dielectric layer is located in the capacitor region and the non-capacitor region. The second dielectric layer is located in the non-capacitor region. At least a portion of the second dielectric layer is located in the first dielectric layer. A material of the second dielectric layer is different from a material of at least a portion of the first dielectric layer. A dielectric constant of the second dielectric layer is smaller than a dielectric constant of at least a portion of the first dielectric layer. The capacitor is located in the first dielectric layer in the capacitor region. The interconnect structure is located in the second dielectric layer in the non-capacitor region.
    Type: Application
    Filed: February 9, 2022
    Publication date: March 30, 2023
    Applicant: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Shih-Ping Lee, Shih-Jan Tung, Sz-Chi Li