Abstract: A method of reducing plasma induced damage in semiconductor devices and fluorine damage to a metal containing layer including providing a semiconductor wafer including semiconductor devices including a gate oxide and a process surface including metal lines; carrying out a first high density plasma chemical vapor deposition (HDP-CVD) process to controllably produce a silicon rich oxide (SRO) layer including a relatively increased thickness at a center portion of the process surface compared to a peripheral portion of the process surface; and, carrying out a second HDP-CVD process in-situ to deposit a fluorine doped silicon dioxide layer over the SRO layer to fill a space between the metal lines.

Abstract: A method of reducing an electrical charge imbalance on a wafer process surface including providing a semiconductor wafer having a process surface including an upper most first material layer; cleaning the process surface according to a wafer cleaning process including at least one of spraying and scrubbing to produce an electrical charge imbalance at the process surface; and, subjecting the process surface to a nitrogen containing plasma treatment to at least partially neutralize the electrical charge imbalance.