Patents by Inventor Sze Chieh Tan

Sze Chieh Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • In situ nucleation for nanocrystalline diamond film deposition
    Patent number: 11946134
    Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.
    Type: Grant
    Filed: January 27, 2022
    Date of Patent: April 2, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Abhijit Basu Mallick, John Sudijono
  • METHOD OF FORMING A DIAMOND FILM
    Publication number: 20230279540
    Abstract: Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.
    Type: Application
    Filed: December 15, 2021
    Publication date: September 7, 2023
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Vicknesh Sahmuganathan, Jiteng Gu, Zhongxin Chen, Kian Ping Loh, John Sudijono, Haisen Xu, Sze Chieh Tan, Yuanxing Han, Jiecong Tang, Eswaranand Venkatasubramanian, Abhijit Basu Mallick
  • IN SITU NUCLEATION FOR NANOCRYSTALLINE DIAMOND FILM DEPOSITION
    Publication number: 20230235452
    Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.
    Type: Application
    Filed: January 27, 2022
    Publication date: July 27, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Abhijit Basu Mallick, John Sudijono
  • VAPOR-PHASE PRECURSOR SEEDING FOR DIAMOND FILM DEPOSITION
    Publication number: 20230175120
    Abstract: Methods of depositing an adamantane film are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which an adamantane seed layer is deposited on a substrate, converting to a diamond nuclei layer having an increased crystallinity relative to the adamantane seed layer and then grown into full nanocrystalline diamond film from the diamond nuclei layer.
    Type: Application
    Filed: December 5, 2022
    Publication date: June 8, 2023
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Eswaranand Venkatasubramanian, Abhijit Basu Mallick, John Sudijono, Jiteng Gu, Kian Ping Loh