Patents by Inventor Sze Him Ng

Sze Him Ng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS transistor with shield coplanar with gate electrode
    Patent number: 6172400
    Abstract: A MOS transistor including a gate electrode on a gate oxide over a channel region between a source region and a drain region also includes a shield electrode at least partially on the gate oxide adjacent to, self-aligned with, and at least partially coplanar with the gate electrode and between the gate electrode and drain region. Placing the shield electrode on the gate oxide improves the gate-drain shielding, reduces the gate-drain capacitance, Cgd, and reduces hot electron related reliability hazard.
    Type: Grant
    Filed: August 25, 1998
    Date of Patent: January 9, 2001
    Assignee: Spectrian Corporation
    Inventors: Sze Him Ng, Francois Hebert
  • MOS transistor with shield coplanar with gate electrode
    Patent number: 5918137
    Abstract: A MOS transistor including a gate electrode on a gate oxide over a channel region between a source region and a drain region also includes a shield electrode at least partially on the gate oxide adjacent to, self-aligned with, and at least partially coplanar with the gate electrode and between the gate electrode and drain region. Placing the shield electrode on the gate oxide improves the gate-drain shielding, reduces the gate-drain capacitance, Cgd, and reduces hot electron related reliability hazard.
    Type: Grant
    Filed: April 27, 1998
    Date of Patent: June 29, 1999
    Assignee: Spectrian, Inc.
    Inventors: Sze Him Ng, Francois Hebert