Patents by Inventor Szehim Daniel Ng

Szehim Daniel Ng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a high power RF field effect transistor with reduced hot electron injection and resulting structure
    Patent number: 6506648
    Abstract: Methods of fabricating a high power RF lateral diffused MOS transistor (LDMOS) having increased reliability includes fabricating an N-drift region for the drain prior to fabrication of the gate contact and other process steps in fabricating the transistor. The resulting device has reduced adverse affects from hot carrier injection including reduced threshold voltage shift over time and reduced maximum current reduction over time. Linearity of device is maximized along with increased reliability while channel length is reduced.
    Type: Grant
    Filed: September 2, 1998
    Date of Patent: January 14, 2003
    Assignee: Cree Microwave, Inc.
    Inventors: Francois Hebert, Szehim Daniel Ng