Abstract: In an embodiment, a device includes: a substrate having a first side and a second side opposite the first side; an interconnect structure adjacent the first side of the substrate; and an integrated circuit device attached to the interconnect structure; a through via extending from the first side of the substrate to the second side of the substrate, the through via being electrically connected to the integrated circuit device; an under bump metallurgy (UBM) adjacent the second side of the substrate and contacting the through via; a conductive bump on the UBM, the conductive bump and the UBM being a continuous conductive material, the conductive bump laterally offset from the through via; and an underfill surrounding the UBM and the conductive bump.

Abstract: A method includes performing an atomic layer deposition (ALD) process to form a dielectric layer on a wafer. The ALD process comprises an ALD cycle includes pulsing calypso ((SiCl3)2CH2), purging the calypso, pulsing ammonia, and purging the ammonia. The method further includes performing a wet anneal process on the dielectric layer, and performing a dry anneal process on the dielectric layer.

Abstract: An integrated application assembly for a multimedia system includes a multimedia system module comprised of a panel and a multimedia circuit module. The multimedia circuit module includes a Bluetooth module, a plurality of USB connection modules, an audio input device, an AUX indicating lamp, and a volume adjusting module. The Bluetooth module includes a Bluetooth module switch and a Bluetooth connection indicating lamp. The Bluetooth module switch and the Bluetooth connection indicating lamp are mounted on the panel. A plurality of audio output devices is connected to the multimedia system module. The multimedia system module and the audio output devices are mounted on a piece of furniture to achieve an integrated application.