Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: A method and a system for mental index prediction are provided. The method includes the following steps. A plurality of images of a subject person are obtained. A plurality of emotion tags of the subject person in the images are analyzed. A plurality of integrated emotion tags in a plurality of predetermined time periods are calculated according to the emotion tags respectively corresponding to the images. A plurality of preferred features are determined according to the integrated emotion tags. A mental index prediction model is established according to the preferred features to predict a mental index according to the emotional index prediction model.

Abstract: A fan control device with power saving mode and start-up setting having a control chip, the chip at least includes a main control circuit for controlling a speed of the fan through receiving an external voltage level, a protection control module for sending an alarm signal to the main control circuit while a detected ambient temperature being higher than a preset temperature, and a sleep mode control module electrically coupled to an externally adjustable voltage threshold circuit, wherein the sleep mode control module compares an input voltage threshold from the externally adjustable voltage threshold circuit and an input voltage detected by the protection control module, and sends a control signal to the main control circuit depended on comparing results of the sleep mode control module for controlling operation modes of the fan.

Abstract: A nerve stimulation system includes an electrode, an electrode controlling device coupled to the electrode and configured to control the electrode to electrically stimulate a peripheral nerve according to a nerve stimulation signal, and a signal generating device coupled to the electrode controlling device and configured to generate the nerve stimulation signal. The nerve stimulation signal is a signal with a square envelope. The square envelope periodically includes an on-time period with a pulse amplitude and an off-time period without the pulse amplitude, and a ratio of the on-time period and the off-time period is not less than 1, and a length of the off-time period is not longer than 5 seconds.

Abstract: A flyback converter with improved over-voltage protection (OVP) functionality, which includes a primary winding arranged to receive an input voltage, a secondary winding coupled to the primary winding and connected to a rectifier circuit to generate DC output voltage, a primary side regulating controller, an auxiliary winding arranged to provide electric power to the primary side regulating controller, an external detection circuit connected between the auxiliary winding and the primary side regulating controller, an internal detection circuit arranged inside the primary side regulating controller and coupled to the external detection circuit by detecting the current value flowing through the external detection circuit and comparing it with a predetermined current value of the internal detection circuit to enable or disable an OVP circuit to protect the primary side regulating controller, and a switching device arranged to receive on/off signals generated for regulating current flowing through the primary win

Abstract: A method of forming semiconductor structure includes forming a bit line structure on a substrate, forming a first landing pad material lower than the bit line structure between two adjacent bit line structures, shaping a top surface of the bit line structure to form an edge area of the top surface lower than a center area of the top surface, forming a second landing pad material on the bit line structure and the first landing pad material, and removing at least a portion of the second landing pad material to form a landing pad.

Abstract: A fan control device with power saving mode and start-up setting having a control chip, the chip at least includes a main control circuit for controlling a speed of the fan through receiving an external voltage level, a protection control module for sending an alarm signal to the main control circuit while a detected ambient temperature being higher than a preset temperature, and a sleep mode control module electrically coupled to an externally adjustable voltage threshold circuit, wherein the sleep mode control module compares an input voltage threshold from the externally adjustable voltage threshold circuit and an input voltage detected by the protection control module, and sends a control signal to the main control circuit depended on comparing results of the sleep mode control module for controlling operation modes of the fan.

Abstract: The present disclosure provides a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure includes: a polysilicon layer, having a first surface and a second surface opposite to the first surface; a substrate, disposed on the second surface of the polysilicon layer; a bit line structure, disposed on the substrate, penetrating through the polysilicon layer and protruding from the first surface of the polysilicon layer; and a spacer structure, disposed on lateral sidewalls of the bit line structure, including an air gap sandwiched by a first dielectric layer and a second dielectric layer, wherein a first portion of the second dielectric layer is in the polysilicon layer, a second portion of the second dielectric layer is outside the polysilicon layer, and a thickness of the second portion of the second dielectric layer is less than a thickness of the first portion of the second dielectric layer.

Abstract: The present disclosure provides a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure includes: a polysilicon layer, having a first surface and a second surface opposite to the first surface; a substrate, disposed on the second surface of the polysilicon layer; a bit line structure, disposed on the substrate, penetrating through the polysilicon layer and protruding from the first surface of the polysilicon layer; and a spacer structure, disposed on lateral sidewalls of the bit line structure, including an air gap sandwiched by a first dielectric layer and a second dielectric layer, wherein a first portion of the second dielectric layer is in the polysilicon layer, a second portion of the second dielectric layer is outside the polysilicon layer, and a thickness of the second portion of the second dielectric layer is less than a thickness of the first portion of the second dielectric layer.

Abstract: The present disclosure provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a patterned insulation layer, a stud and a landing pad. The patterned insulation layer has an opening. The stud is disposed in the opening. The landing pad is disposed on the patterned insulation layer. The stud and the landing pad are integrally formed.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a base and a plurality of protrusions extending from the base and spaced apart from each other; a first oxide layer substantially disposed between two adjacent protrusions and exposing an upper portion of the protrusion between portions of the first oxide layer; a bit line contact covering the upper portion of the protrusion; a bit line disposed over the bit line contact; a first nitride layer disposed on lateral surfaces of the bit line contact and the bit line and on an upper surface and a sidewall of the first oxide layer exposed to the bit line contact; and a second nitride layer at least formed over the first nitride layer disposed on the lateral surfaces with an interval and connected to the first nitride layer disposed on the sidewall, thereby forming an air gap between the first and second nitride layers.

Abstract: A method of manufacturing a semiconductor device includes: forming a first patterned target layer on a substrate having a first region and a second region, the first patterned target layer has first stripes and first openings along a first direction; sequentially forming a lower hardmask layer and a middle hardmask layer covering the first patterned target layer; forming a patterned upper hardmask layer on the middle hardmask layer, the patterned upper hardmask layer has second stripes and second openings along a second direction and exposing a portion of the middle hardmask layer; etching the exposed portion of the middle hardmask layer to form third openings exposing a portion of the lower hardmask layer; and etching the exposed portion of the lower hardmask layer and the first patterned target layer thereunder to form a second patterned target layer having rounded patterns on the first region.

Abstract: An image calibrating method for stitching images includes calculating contrast values of a plurality of images, and comparing the contrast values to set the image with maximal contrast value as a reference image; others of the plurality of images are set as target images. The image calibrating method further includes calculating cumulative distribution functions of the reference image and the target images respectively, and obtaining a transform function according to the cumulative distribution functions of the reference image and the target images for pixel adjustment of the target images. Further, a camera with an image calibrating function and a related image processing system are disclosed in the present invention.

Abstract: A viewing angle switching method capable of conveniently adjusting region of interest (ROI) and user-friendly displaying image can be applied to a related camera. The viewing angle switching method includes setting at least one first region of interest and one second region of interest within a monitoring image, displaying the first region of interest on a monitoring screen, analyzing direction information of a switching command, and determining whether to rotate the second region of interest by a predetermined angle and to display the rotated second region of interest in accordance with the direction information.

Abstract: A size-adaptive mobile device cover comprises: multiple cover panels, each of the cover panels connected to at least another one of the cover panels, one of the cover panels having a side surface and a first attaching portion mounted on the side surface of the panel; at least one first edge holder secured on the side surface of the panel that has the first attaching portion, each of the at least one first edge holder having a retaining recess; and multiple corner holders disposed opposite to the at least one first edge holder, each of the corner holders having a second attaching portion, and the second attaching portion detachably attached to the first attaching portion. Accordingly, the size-adaptive mobile device cover is not only applicable to mobile devices of various sizes, but also has low production cost and is convenient for use.

Abstract: An image calibrating method for stitching images includes calculating contrast values of a plurality of images, and comparing the contrast values to set the image with maximal contrast value as a reference image; others of the plurality of images are set as target images. The image calibrating method further includes calculating cumulative distribution functions of the reference image and the target images respectively, and obtaining a transform function according to the cumulative distribution functions of the reference image and the target images for pixel adjustment of the target images. Further, a camera with an image calibrating function and a related image processing system are disclosed in the present invention.

Abstract: A size-adaptive mobile device cover comprises: a cover panel or multiple cover panels, one cover panel having a side surface and a first attaching portion mounted on the side surface of the cover panel; at least one first edge holder secured on the side surface of the panel that has the first attaching portion, each of the at least one first edge holder having a retaining recess; and multiple corner holders disposed opposite to the at least one first edge holder, each of the corner holders having a second attaching portion, and the second attaching portion detachably attached to the first attaching portion. Accordingly, the size-adaptive mobile device cover is not only applicable to mobile devices of various sizes, but also has low production cost and is convenient for use.

Abstract: A size-adaptive mobile device cover comprises: multiple cover panels, each of the cover panels connected to at least another one of the cover panels, one of the cover panels having a side surface and a first attaching portion mounted on the side surface of the panel; at least one first edge holder secured on the side surface of the panel that has the first attaching portion, each of the at least one first edge holder having a retaining recess; and multiple corner holders disposed opposite to the at least one first edge holder, each of the corner holders having a second attaching portion, and the second attaching portion detachably attached to the first attaching portion. Accordingly, the size-adaptive mobile device cover is not only applicable to mobile devices of various sizes, but also has low production cost and is convenient for use.

Abstract: A size-adaptive mobile device cover has a protection cover with two cover boards and multiple angle holders detachably mounted inside the protection cover. The protection cover serves to carry a mobile device. Each angle holder has two holding sections. A movable fixing portion is detachably mounted on an outer side of one of the holding sections, and is detachably combined with another movable fixing portion on an inner side of one of the cover boards. A holding slot is formed between the two holding sections of each angle holder for holding one corner of the mobile device. As the angle holders can be selectively and detachably mounted on the cover board to hold corners of a mobile device, the size-adaptive mobile device is applicable to mobile devices of various sizes.

Abstract: A pixel circuit includes a pixel unit and a memory circuit. The memory circuit includes a first switch, a switch unit, a second switch, and a plurality of memory units. Each of the memory units includes a third switch and a capacitor, where the capacitors of the memory units have a same capacitance. A data accessing method applied on the pixel circuit includes determining an order of writing a plurality of first voltages, which are loaded from a data line, according to weights of bits within a first bit string, where the bits are respectively corresponding to the first voltages, and includes determining an order and loading durations of loading a plurality of second voltages, which are previously stored in the memory units, according to weights of bits within a second bit string, where the bits are respectively corresponding to the second voltages.