Abstract: A semiconductor device includes a gate structure, an insulating layer and two source/drain regions. A portion of the gate structure is embedded in a substrate. The insulating layer is disposed between the portion of the gate structure and the substrate and encompasses the portion of the gate structure. The two source/drain regions are disposed in the substrate and respectively located at two sides of the gate structure.

Abstract: A method for forming a thin film resistor with improved thermal stability is disclosed. A substrate having thereon a first dielectric layer is provided. A resistive material layer is deposited on the first dielectric layer. A capping layer is deposited on the resistive material layer. The resistive material layer is then subjected to a thermal treatment at a pre-selected temperature higher than 350 degrees Celsius in a hydrogen or deuterium atmosphere. The capping layer and the resistive material layer are patterned to form a thin film resistor on the first dielectric layer.

Abstract: The apparatus and method for measuring displacement according to the present invention includes a first beam and a second beam. A first reflection structure reflects a first beam to the surface of an object under test; and a second reflection structure reflects a second beam to the surface of the object under test. The reflected first beam and the reflected second beam have an optical path difference. The object under test scatters a scattering beam of gathering the first and second beams. The scattering beam has an interference signal. A photodetector receives the interference signal of the scattering beam. Then an operational unit receives and computes the interference signal for producing a displacement value. By using the first and second reflection structures, the first and second beams split from an incident beam produce an optical path difference. Thereby, the structure of the apparatus for measuring displacement can be simplified.

Abstract: The apparatus and method for measuring displacement according to the present invention includes a first beam and a second beam. A first reflection structure reflects a first beam to the surface of an object under test; and a second reflection structure reflects a second beam to the surface of the object under test. The reflected first beam and the reflected second beam have an optical path difference. The object under test scatters a scattering beam of gathering the first and second beams. The scattering beam has an interference signal. A photodetector receives the interference signal of the scattering beam. Then an operational unit receives and computes the interference signal for producing a displacement value. By using the first and second reflection structures, the first and second beams split from an incident beam produce an optical path difference. Thereby, the structure of the apparatus for measuring displacement can be simplified.