Abstract: A liquid dressing includes a solvent and a film-forming polymer that is dissolved in the solvent and that is made by a process including: providing an alkoxy group-containing silicone resin which is obtained by subjecting an orthosilicate compound and an acidic aqueous solution to a hydrolysis and polymerization reaction; providing an isocyanate group-containing prepolymer which is obtained by reacting a diisocyanate compound with a hydrophilic polyether diol; and subjecting the alkoxy group-containing silicone resin and the isocyanate group-containing prepolymer to a polymerization reaction so as to obtain the film-forming polymer.

Abstract: In some embodiments, an integrated circuit is provided. The integrated circuit may include an inner ring-shaped isolation structure that is disposed in a semiconductor substrate. Further, the inner-ring shaped isolation structure may demarcate a device region. An inner ring-shaped well is disposed in the semiconductor substrate and surrounds the inner ring-shaped isolation structure. A plurality of dummy gates are arranged over the inner ring-shaped well. Moreover, the plurality of dummy gates are arranged within an interlayer dielectric layer.

Abstract: In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a gate electrode disposed within the substrate; a gate dielectric layer disposed within the substrate and surrounding the gate electrode; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate dielectric layer; and a pair of source/drain regions on opposing sides of the gate dielectric layer.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a doped region within the substrate; a pair of source/drain regions extending along a first direction on opposite sides of the doped region; a gate electrode disposed in the doped region, wherein the gate electrode has a plurality of first segments extending in parallel along the first direction; and a protection structure over the substrate and at least partially overlaps the gate electrode.

Abstract: In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.

Abstract: The disclosure provides a method for training generative adversarial network (GAN), a method for generating images by using GAN, and a computer readable storage medium. The method may train the first generator of the GAN with available training samples belonging to the first type category and share the knowledge learnt by the first generator to the second generator. Accordingly, the second generator may learn to generate (fake) images belonging to the second type category even if there are no available training data during training the second generator.

Abstract: The present invention provides a voltage control method for controlling a power supply. The voltage control method comprises the following steps: obtaining a present output voltage value associated with a present gain value; obtaining a predetermined output voltage value associated with a predetermined duty ratio; calculating a target gain value, corresponding to the predetermined duty ratio, according to a gain value formula; performing a weight calculation on the present gain value and the target gain value for generating a buffer gain value; and setting an output voltage command according to the buffer gain value. Wherein the buffer gain value is between the present gain value and the target gain value.

Abstract: A method and a system for mental index prediction are provided. The method includes the following steps. A plurality of images of a subject person are obtained. A plurality of emotion tags of the subject person in the images are analyzed. A plurality of integrated emotion tags in a plurality of predetermined time periods are calculated according to the emotion tags respectively corresponding to the images. A plurality of preferred features are determined according to the integrated emotion tags. A mental index prediction model is established according to the preferred features to predict a mental index according to the emotional index prediction model.

Abstract: A carrier structure includes: a plurality of substrates; a separation portion provided between the substrates; and a periphery portion provided at the periphery of the substrates and formed with at least one opening. With the configuration of the opening, the area of an insulating layer of the carrier structure can be reduced. Therefore, the overall space of electrostatic buildup in the carrier structure can also be reduced.

Abstract: Disclosed herein is a polyurethane foam sponge produced by the steps of a) providing an hydrophobic polyol which has six hydroxyl groups, b) providing a hydrophilic diisocyanate obtained by reacting a diisocyanate with a hydrophilic polyether diol, c) reacting the hydrophobic polyol with the hydrophilic diisocyanate to obtain a prepolymer which includes 3 to 6 isocyanate groups, and d) mixing the prepolymer with a hydrophilic polyether polyol, a blowing agent, an end-capping agent, a reinforcing agent, and a catalyst to obtain the polyurethane foam sponge. A wound dressing including the polyurethane foam sponge is also disclosed.

Abstract: Disclosed herein is a hydrogel wound dressing produced by the steps of a) providing an hydrophobic polyol which has six hydroxyl groups, b) providing an hydrophilic diisocyanate obtained by reacting a second diisocyanate with a hydrophilic polyether diol, c) reacting the hydrophobic polyol with the hydrophilic diisocyanate to obtain a first prepolymer which includes 3 to 6 isocyanate groups, d) partially crosslinking the first prepolymer using a crosslinking agent to obtain a second prepolymer, and e) subjecting the second prepolymer to an end-capping reaction with a silane-containing compound to obtain the hydrogel wound dressing.

Abstract: A pressure relief cushion includes an elastic layer which is made from a viscoelastic foam material, an adhesive carrying layer disposed on the elastic layer and including an adhesive portion and a carrier portion for carrying the adhesive portion, a hydrogel layer disposed on the adhesive carrying layer opposite to the elastic layer, and a detachable film disposed on the hydrogel layer opposite to the adhesive carrying layer.

Abstract: A package stack structure and a method for fabricating the same are provided. An electronic component is disposed on the topmost one of a plurality of organic material substrates, and no chip is disposed on the remaining organic material substrates. A predefined layer number of circuit layers are disposed in the organic material substrates, and distributes the thermal stress via the organic material substrates. Therefore, the bottommost one of the organic material substrates will not be separated from a circuit board due to CTE mismatch. Also a carrier component is provided.

Abstract: A carrier structure includes: a plurality of substrates; a separation portion provided between the substrates; and a periphery portion provided at the periphery of the substrates and formed with at least one opening. With the configuration of the opening, the area of an insulating layer of the carrier structure can be reduced. Therefore, the overall space of electrostatic buildup in the carrier structure can also be reduced.

Abstract: The invention has modified the conventional LCD structure, wherein a polarizing film is directly coated in the liquid crystal cell instead of the conventional polarizing plate, which is glued on the outer side of the liquid crystal cell. Then, the invention can prevent the direct contact between the polarizing film and the touch panel of film film (FF) type or in film plastic (FP) type. Thus, the touch panel on the LCD panel can adapt various technologies, so that the touch panel of FF type can be used without worrying about the damage on the polarizing film due to the pressure while a point touch is applied on the touch panel. Also and, for the touch panel of FP type, a conductive film can be directly coated on the panel substrate. The invention uses the coating polarizing film as an extraordinary mode (e-mode) polarizer. Also and, an ordinary mode (o-mode) polarizer can also be adapted, so as to expand the large viewing angle in good polarizing effect.