Patents by Inventor Szu-Hsien Chen

Szu-Hsien Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230035312
    Abstract: A liquid dressing includes a solvent and a film-forming polymer that is dissolved in the solvent and that is made by a process including: providing an alkoxy group-containing silicone resin which is obtained by subjecting an orthosilicate compound and an acidic aqueous solution to a hydrolysis and polymerization reaction; providing an isocyanate group-containing prepolymer which is obtained by reacting a diisocyanate compound with a hydrophilic polyether diol; and subjecting the alkoxy group-containing silicone resin and the isocyanate group-containing prepolymer to a polymerization reaction so as to obtain the film-forming polymer.
    Type: Application
    Filed: March 10, 2022
    Publication date: February 2, 2023
    Inventors: Szu-Hsien CHEN, Ren-Shian WANG, Ya-Wen KU, Chiu-Fang CHEN
  • Patent number: 11569363
    Abstract: In some embodiments, an integrated circuit is provided. The integrated circuit may include an inner ring-shaped isolation structure that is disposed in a semiconductor substrate. Further, the inner-ring shaped isolation structure may demarcate a device region. An inner ring-shaped well is disposed in the semiconductor substrate and surrounds the inner ring-shaped isolation structure. A plurality of dummy gates are arranged over the inner ring-shaped well. Moreover, the plurality of dummy gates are arranged within an interlayer dielectric layer.
    Type: Grant
    Filed: March 4, 2021
    Date of Patent: January 31, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Huan Chen, Chien-Chih Chou, Ta-Wei Lin, Fu-Jier Fan, Kong-Beng Thei, Yi-Sheng Chen, Szu-Hsien Liu
  • Publication number: 20220367654
    Abstract: In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 17, 2022
    Inventors: Yi-Huan Chen, Kong-Beng Thei, Chien-Chih Chou, Alexander Kalnitsky, Szu-Hsien Liu, Huan-Chih Yuan
  • Publication number: 20220367709
    Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a gate electrode disposed within the substrate; a gate dielectric layer disposed within the substrate and surrounding the gate electrode; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate dielectric layer; and a pair of source/drain regions on opposing sides of the gate dielectric layer.
    Type: Application
    Filed: May 14, 2021
    Publication date: November 17, 2022
    Inventors: YI-HUAN CHEN, CHIEN-CHIH CHOU, SZU-HSIEN LIU, KONG-BENG THEI, HUAN-CHIH YUAN, JHU-MIN SONG
  • Publication number: 20220367708
    Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a doped region within the substrate; a pair of source/drain regions extending along a first direction on opposite sides of the doped region; a gate electrode disposed in the doped region, wherein the gate electrode has a plurality of first segments extending in parallel along the first direction; and a protection structure over the substrate and at least partially overlaps the gate electrode.
    Type: Application
    Filed: May 14, 2021
    Publication date: November 17, 2022
    Inventors: YI-HUAN CHEN, CHIEN-CHIH CHOU, SZU-HSIEN LIU, KONG-BENG THEI
  • Patent number: 11469307
    Abstract: In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.
    Type: Grant
    Filed: November 16, 2020
    Date of Patent: October 11, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Huan Chen, Kong-Beng Thei, Chien-Chih Chou, Alexander Kalnitsky, Szu-Hsien Liu, Huan-Chih Yuan
  • Patent number: 11379722
    Abstract: The disclosure provides a method for training generative adversarial network (GAN), a method for generating images by using GAN, and a computer readable storage medium. The method may train the first generator of the GAN with available training samples belonging to the first type category and share the knowledge learnt by the first generator to the second generator. Accordingly, the second generator may learn to generate (fake) images belonging to the second type category even if there are no available training data during training the second generator.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: July 5, 2022
    Assignee: HTC Corporation
    Inventors: Edward Chang, Che-Han Chang, Chun-Hsien Yu, Szu-Ying Chen
  • Publication number: 20220209666
    Abstract: The present invention provides a voltage control method for controlling a power supply. The voltage control method comprises the following steps: obtaining a present output voltage value associated with a present gain value; obtaining a predetermined output voltage value associated with a predetermined duty ratio; calculating a target gain value, corresponding to the predetermined duty ratio, according to a gain value formula; performing a weight calculation on the present gain value and the target gain value for generating a buffer gain value; and setting an output voltage command according to the buffer gain value. Wherein the buffer gain value is between the present gain value and the target gain value.
    Type: Application
    Filed: December 27, 2021
    Publication date: June 30, 2022
    Inventors: Szu-Chieh SU, Wei-Chin TSENG, Chih-Hsien WANG, His-Ping TSAI, Wen-Chih CHEN, Guei-Cheng HU
  • Publication number: 20220208383
    Abstract: A method and a system for mental index prediction are provided. The method includes the following steps. A plurality of images of a subject person are obtained. A plurality of emotion tags of the subject person in the images are analyzed. A plurality of integrated emotion tags in a plurality of predetermined time periods are calculated according to the emotion tags respectively corresponding to the images. A plurality of preferred features are determined according to the integrated emotion tags. A mental index prediction model is established according to the preferred features to predict a mental index according to the emotional index prediction model.
    Type: Application
    Filed: July 2, 2021
    Publication date: June 30, 2022
    Applicants: Acer Incorporated, National Yang Ming Chiao Tung University
    Inventors: Chun-Hsien Li, Szu-Chieh Wang, Andy Ho, Liang-Kung Chen, Jun-Hong Chen, Li-Ning Peng, Tsung-Han Yang, Yun-Hsuan Chan, Tsung-Hsien Tsai
  • Patent number: 11239125
    Abstract: A carrier structure includes: a plurality of substrates; a separation portion provided between the substrates; and a periphery portion provided at the periphery of the substrates and formed with at least one opening. With the configuration of the opening, the area of an insulating layer of the carrier structure can be reduced. Therefore, the overall space of electrostatic buildup in the carrier structure can also be reduced.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: February 1, 2022
    Assignee: Siliconware Precision Industries Co., Ltd.
    Inventors: Hsien-Lung Hsiao, Yu-Cheng Pai, Chia-Chi Lo, Szu-Hsien Chen, Shu-Chi Chang
  • Publication number: 20210395438
    Abstract: Disclosed herein is a polyurethane foam sponge produced by the steps of a) providing an hydrophobic polyol which has six hydroxyl groups, b) providing a hydrophilic diisocyanate obtained by reacting a diisocyanate with a hydrophilic polyether diol, c) reacting the hydrophobic polyol with the hydrophilic diisocyanate to obtain a prepolymer which includes 3 to 6 isocyanate groups, and d) mixing the prepolymer with a hydrophilic polyether polyol, a blowing agent, an end-capping agent, a reinforcing agent, and a catalyst to obtain the polyurethane foam sponge. A wound dressing including the polyurethane foam sponge is also disclosed.
    Type: Application
    Filed: September 15, 2020
    Publication date: December 23, 2021
    Inventors: Szu-Hsien Chen, Ya-Wen Ku, Ren-Shian Wang, Chiu-Fang Chen
  • Publication number: 20210023256
    Abstract: Disclosed herein is a hydrogel wound dressing produced by the steps of a) providing an hydrophobic polyol which has six hydroxyl groups, b) providing an hydrophilic diisocyanate obtained by reacting a second diisocyanate with a hydrophilic polyether diol, c) reacting the hydrophobic polyol with the hydrophilic diisocyanate to obtain a first prepolymer which includes 3 to 6 isocyanate groups, d) partially crosslinking the first prepolymer using a crosslinking agent to obtain a second prepolymer, and e) subjecting the second prepolymer to an end-capping reaction with a silane-containing compound to obtain the hydrogel wound dressing.
    Type: Application
    Filed: October 18, 2019
    Publication date: January 28, 2021
    Inventors: Hung-Kai Hsiao, Szu-Hsien Chen, Ya-Wen Ku, Ren-Shian Wang, Chiu-Fang Chen
  • Publication number: 20210023814
    Abstract: A pressure relief cushion includes an elastic layer which is made from a viscoelastic foam material, an adhesive carrying layer disposed on the elastic layer and including an adhesive portion and a carrier portion for carrying the adhesive portion, a hydrogel layer disposed on the adhesive carrying layer opposite to the elastic layer, and a detachable film disposed on the hydrogel layer opposite to the adhesive carrying layer.
    Type: Application
    Filed: July 20, 2020
    Publication date: January 28, 2021
    Inventors: Szu-Hsien CHEN, Ya-Wen KU, Ren-Shian WANG, Chiu-Fang CHEN
  • Publication number: 20200328142
    Abstract: A package stack structure and a method for fabricating the same are provided. An electronic component is disposed on the topmost one of a plurality of organic material substrates, and no chip is disposed on the remaining organic material substrates. A predefined layer number of circuit layers are disposed in the organic material substrates, and distributes the thermal stress via the organic material substrates. Therefore, the bottommost one of the organic material substrates will not be separated from a circuit board due to CTE mismatch. Also a carrier component is provided.
    Type: Application
    Filed: August 12, 2019
    Publication date: October 15, 2020
    Inventors: Don-Son Jiang, Nai-Hao Kao, Chih-Sheng Lin, Szu-Hsien Chen, Chih-Yuan Shih, Chia-Cheng Chen, Yu-Cheng Pai, Hsuan-Hao Mi
  • Publication number: 20200035573
    Abstract: A carrier structure includes: a plurality of substrates; a separation portion provided between the substrates; and a periphery portion provided at the periphery of the substrates and formed with at least one opening. With the configuration of the opening, the area of an insulating layer of the carrier structure can be reduced. Therefore, the overall space of electrostatic buildup in the carrier structure can also be reduced.
    Type: Application
    Filed: December 26, 2018
    Publication date: January 30, 2020
    Inventors: Hsien-Lung Hsiao, Yu-Cheng Pai, Chia-Chi Lo, Szu-Hsien Chen, Shu-Chi Chang
  • Publication number: 20030147016
    Abstract: The invention has modified the conventional LCD structure, wherein a polarizing film is directly coated in the liquid crystal cell instead of the conventional polarizing plate, which is glued on the outer side of the liquid crystal cell. Then, the invention can prevent the direct contact between the polarizing film and the touch panel of film film (FF) type or in film plastic (FP) type. Thus, the touch panel on the LCD panel can adapt various technologies, so that the touch panel of FF type can be used without worrying about the damage on the polarizing film due to the pressure while a point touch is applied on the touch panel. Also and, for the touch panel of FP type, a conductive film can be directly coated on the panel substrate. The invention uses the coating polarizing film as an extraordinary mode (e-mode) polarizer. Also and, an ordinary mode (o-mode) polarizer can also be adapted, so as to expand the large viewing angle in good polarizing effect.
    Type: Application
    Filed: December 9, 2002
    Publication date: August 7, 2003
    Inventors: Jacob W. Lin, Chiafu Jeff Nien, Ching-Sheng Cho, Szu-Hsien Chen, Wen-Chi Huang