Patents by Inventor Szu-Ju LI

Szu-Ju LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220031195
    Abstract: The invention provides a gait evaluating system and a gait evaluating method. The gait evaluation system includes a gait evaluating device configured to: obtain, from a pressure detection device, a plurality of pressure values of a user walking on the pressure detection device; obtain a plurality of step feature values of the user based on the pressure values; obtain a plurality of walking limb feature values when the user walks on the pressure detection device based on a sensing data provided by a limb sensing device; and evaluate a gait of the user based on the step feature values and the walking limb feature values.
    Type: Application
    Filed: July 29, 2021
    Publication date: February 3, 2022
    Applicant: Industrial Technology Research Institute
    Inventors: Je-Ping Hu, Keng-Hsun Lin, Shih-Fang Yang Mao, Pin-Chou Li, Jian-Hong Wu, Szu-Ju Li, Hui-Yu Cho, Yu-Chang Chen, Yen-Nien Lu, Jyun-Siang Hsu, Nien-Ya Lee, Kuan-Ting Ho, Ming-Chieh Tsai, Ching-Yu Huang
  • Patent number: 11134861
    Abstract: An exercise state evaluation method having the following steps is provided. The steps includes: obtaining a plurality of sensing signals by a foot information sensing module; recording a receiving time of each of the sensing signals by a processing unit and generating a plurality of pressure values, a plurality of center of gravity values, and a center of gravity trajectory information corresponding a human body according to each of the sensing signals; determining a start time, an acting time and a finish time corresponding to an exercise according to the receiving time, the pressure values, the center of gravity values and the center of gravity trajectory information; obtaining an act time value according to the start time, the acting time and the finish time; and integrating the pressure values, the center of gravity values, the center of gravity trajectory information and the act time value to an user interface.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: October 5, 2021
    Assignees: Industrial Technology Research Institute, National Taiwan University of Sport
    Inventors: Jian-Hong Wu, Ren-Der Jean, Pin-Chou Li, Jyh-How Huang, Jung-Hao Wang, Szu-Ju Li
  • Publication number: 20210190752
    Abstract: A multi-function water quality monitoring device is provided, which includes a multi-function water quality monitoring probe and a control module. The multi-function water quality monitoring probe includes a first signal electrode, a first sensing electrode, a second signal electrode and a second sensing electrode. The control module is connected to the probe. When the control module outputs a first time-variant signal to drive the first signal electrode, the first sensing electrode outputs a first water quality signal. When the control module outputs a second time-variant signal to drive the second signal electrode, the first sensing electrode and the second sensing electrode output the first sensing signal and a second sensing signal respectively. When the control module outputs the first time-variant signal and the second time-variant signal to simultaneously drive the first signal electrode and the second signal electrode, the first sensing electrode outputs the first water quality signal.
    Type: Application
    Filed: December 18, 2020
    Publication date: June 24, 2021
    Inventors: SZU-JU LI, LI-DUAN TSAI, JUNG-HAO WANG, ZHI-SHENG HUANG, CHUN-LIN CHENG
  • Publication number: 20200054248
    Abstract: An exercise state evaluation method having the following steps is provided. The steps includes: obtaining a plurality of sensing signals by a foot information sensing module; recording a receiving time of each of the sensing signals by a processing unit and generating a plurality of pressure values, a plurality of center of gravity values, and a center of gravity trajectory information corresponding a human body according to each of the sensing signals; determining a start time, an acting time and a finish time corresponding to an exercise according to the receiving time, the pressure values, the center of gravity values and the center of gravity trajectory information; obtaining an act time value according to the start time, the acting time and the finish time; and integrating the pressure values, the center of gravity values, the center of gravity trajectory information and the act time value to an user interface.
    Type: Application
    Filed: August 15, 2019
    Publication date: February 20, 2020
    Applicants: Industrial Technology Research Institute, National Taiwan University of Sport
    Inventors: Jian-Hong Wu, Ren-Der Jean, Pin-Chou Li, Jyh-How Huang, Jung-Hao Wang, Szu-Ju Li
  • Patent number: 10383537
    Abstract: A physiological signal measuring method and a physiological signal measuring device are provided. The physiological signal measuring method includes the following steps: A first inputting signal having a first frequency, a second inputting signal having a second frequency and a third inputting signal having a third frequency are respectively inputted to at least two electrode sheets attached on a skin. A first impedance value corresponding to the first inputting signal, a second impedance value corresponding to the second inputting signal and a third impedance value corresponding to the third inputting signal are respectively measured. An interference impedance between the electrode sheets and the skin is obtained according to the first frequency, the second frequency, the third frequency, the first impedance value, the second impedance value and the third impedance value. A measured physiological signal is corrected according to the interference impedance to obtain a corrected physiological signal.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: August 20, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Szu-Ju Li, Pai-Hao Wu, I-Cherng Chen, Hsin-Hung Pan, Jung-Hao Wang, Ren-Der Jean, Meng-Song Yin, Chun-Te Chuang
  • Publication number: 20180168474
    Abstract: A physiological signal measuring method and a physiological signal measuring device are provided. The physiological signal measuring method includes the following steps: A first inputting signal having a first frequency, a second inputting signal having a second frequency and a third inputting signal having a third frequency are respectively inputted to at least two electrode sheets attached on a skin. A first impedance value corresponding to the first inputting signal, a second impedance value corresponding to the second inputting signal and a third impedance value corresponding to the third inputting signal are respectively measured. An interference impedance between the electrode sheets and the skin is obtained according to the first frequency, the second frequency, the third frequency, the first impedance value, the second impedance value and the third impedance value. A measured physiological signal is corrected according to the interference impedance to obtain a corrected physiological signal.
    Type: Application
    Filed: August 18, 2017
    Publication date: June 21, 2018
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Szu-Ju LI, Pai-Hao WU, I-Cherng CHEN, Hsin-Hung PAN, Jung-Hao WANG, Ren-Der JEAN, Meng-Song YIN, Chun-Te CHUANG
  • Patent number: 9823141
    Abstract: A sensing device has a first substrate, a second substrate, a plurality of sets of first electrodes, a plurality of second electrodes, a plurality of first axis signal lines, a plurality of second axis signal lines, and a plurality of second signal lines. The second substrate is above the first substrate and has a reset structure. The second electrodes are on the first surface of the second substrate in array. Each set of first electrodes is on the first substrate in array, corresponding to one of the plurality of second electrodes, and having at least one first axis electrode and at least one second axis electrode. The first axis electrode and the second axis electrode both partially overlap with the corresponding second electrode.
    Type: Grant
    Filed: January 25, 2016
    Date of Patent: November 21, 2017
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Szu-Ju Li, Jung-Hao Wang, Hsin-Hung Pan, Meng-Song Yin
  • Publication number: 20160363489
    Abstract: A sensing device has a first substrate, a second substrate, a plurality of sets of first electrodes, a plurality of second electrodes, a plurality of first axis signal lines, a plurality of second axis signal lines, and a plurality of second signal lines. The second substrate is above the first substrate and has a reset structure. The second electrodes are on the first surface of the second substrate in array. Each set of first electrodes is on the first substrate in array, corresponding to one of the plurality of second electrodes, and having at least one first axis electrode and at least one second axis electrode. The first axis electrode and the second axis electrode both partially overlap with the corresponding second electrode.
    Type: Application
    Filed: January 25, 2016
    Publication date: December 15, 2016
    Inventors: Szu-Ju Li, Jung-Hao Wang, Hsin-Hung Pan, Meng-Song Yin
  • Patent number: 9087923
    Abstract: A monolithic compound semiconductor structure is disclosed. The monolithic compound semiconductor structure comprises a substrate, an n-type FET epitaxial structure, an n-type etching-stop layer, a p-type insertion layer, and an npn HBT epitaxial structure, and it can be used to form an FET, an HBT, or a thyristor.
    Type: Grant
    Filed: October 26, 2012
    Date of Patent: July 21, 2015
    Assignee: WIN SMICONDUTOR CORP.
    Inventors: Cheng-Kuo Lin, Szu-Ju Li, Rong-Hao Syu, Shu-Hsiao Tsai
  • Patent number: 9019028
    Abstract: An integrated structure of compound semiconductor devices is disclosed. The integrated structure comprises from bottom to top a substrate, a first epitaxial layer, an etching-stop layer, a second epitaxial layer, a sub-collector layer, a collector layer, a base layer, and an emitter layer, in which the first epitaxial layer is a p-type doped layer, the second epitaxial layer is an n-type graded doping layer with a gradually increased or decreased doping concentration, and the sub-collector layer is an n-type doped layer. The integrated structure can be used to form an HBT, a varactor, or an MESFET.
    Type: Grant
    Filed: October 26, 2012
    Date of Patent: April 28, 2015
    Assignee: WIN Semiconductors Corp.
    Inventors: Cheng-Kuo Lin, Szu-Ju Li, Rong-Hao Syu, Shu-Hsiao Tsai
  • Publication number: 20140069613
    Abstract: A cooling apparatus is disclosed. The cooling apparatus includes a carrier and a flat-plate type cooling conduit. The flat-plate type cooling conduit is made of a high thermal conductive material and disposed on or in the carrier. The flat-plate type cooling conduit includes a conduit portion and a flat plate portion. The conduit portion has a conducting hole for conducting a coolant, and the flat plate portion is adhered to the carrier for allowing the coolant to perform heat exchange through a large contact area between the flat plate portion and the carrier. In addition, a cooling source gel can be used to perform heat exchange with the coolant in the conducting hole in order to improve the heat exchange efficiency of the cooling apparatus, and to effectively reduce the temperature of the carrier.
    Type: Application
    Filed: August 13, 2013
    Publication date: March 13, 2014
    Applicant: Industrial Technology Research Institute
    Inventors: Chia-Ming LIU, Lien-Tai CHEN, Tsing-Tang SONG, Chin-Tien YANG, Szu-Ju LI
  • Publication number: 20130334570
    Abstract: An integrated structure of compound semiconductor devices is disclosed. The integrated structure comprises from bottom to top a substrate, a first epitaxial layer, an etching-stop layer, a second epitaxial layer, a sub-collector layer, a collector layer, a base layer, and an emitter layer, in which the first epitaxial layer is a p-type doped layer, the second epitaxial layer is an n-type graded doping layer with a gradually increased or decreased doping concentration, and the sub-collector layer is an n-type doped layer. The integrated structure can be used to form an HBT, a varactor, or an MESFET.
    Type: Application
    Filed: October 26, 2012
    Publication date: December 19, 2013
    Applicant: WIN SEMICONDUCTORS CORP.
    Inventors: Cheng-Kuo LIN, Szu-Ju LI, Rong-Hao SYU, Shu-Hsiao TSAI
  • Publication number: 20130334564
    Abstract: A monolithic compound semiconductor structure is disclosed. The monolithic compound semiconductor structure comprises a substrate, an n-type FET epitaxial structure, an n-type etching-stop layer, a p-type insertion layer, and an npn HBT epitaxial structure, and it can be used to form an FET, an HBT, or a thyristor.
    Type: Application
    Filed: October 26, 2012
    Publication date: December 19, 2013
    Applicant: WIN SEMICONDUCTORS CORP.
    Inventors: Cheng-Kuo LIN, Szu-Ju LI, Rong-Hao SYU, Shu-Hsiao TSAI