Patents by Inventor Szu-Ju LI
Szu-Ju LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220031195Abstract: The invention provides a gait evaluating system and a gait evaluating method. The gait evaluation system includes a gait evaluating device configured to: obtain, from a pressure detection device, a plurality of pressure values of a user walking on the pressure detection device; obtain a plurality of step feature values of the user based on the pressure values; obtain a plurality of walking limb feature values when the user walks on the pressure detection device based on a sensing data provided by a limb sensing device; and evaluate a gait of the user based on the step feature values and the walking limb feature values.Type: ApplicationFiled: July 29, 2021Publication date: February 3, 2022Applicant: Industrial Technology Research InstituteInventors: Je-Ping Hu, Keng-Hsun Lin, Shih-Fang Yang Mao, Pin-Chou Li, Jian-Hong Wu, Szu-Ju Li, Hui-Yu Cho, Yu-Chang Chen, Yen-Nien Lu, Jyun-Siang Hsu, Nien-Ya Lee, Kuan-Ting Ho, Ming-Chieh Tsai, Ching-Yu Huang
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Patent number: 11134861Abstract: An exercise state evaluation method having the following steps is provided. The steps includes: obtaining a plurality of sensing signals by a foot information sensing module; recording a receiving time of each of the sensing signals by a processing unit and generating a plurality of pressure values, a plurality of center of gravity values, and a center of gravity trajectory information corresponding a human body according to each of the sensing signals; determining a start time, an acting time and a finish time corresponding to an exercise according to the receiving time, the pressure values, the center of gravity values and the center of gravity trajectory information; obtaining an act time value according to the start time, the acting time and the finish time; and integrating the pressure values, the center of gravity values, the center of gravity trajectory information and the act time value to an user interface.Type: GrantFiled: August 15, 2019Date of Patent: October 5, 2021Assignees: Industrial Technology Research Institute, National Taiwan University of SportInventors: Jian-Hong Wu, Ren-Der Jean, Pin-Chou Li, Jyh-How Huang, Jung-Hao Wang, Szu-Ju Li
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Publication number: 20210190752Abstract: A multi-function water quality monitoring device is provided, which includes a multi-function water quality monitoring probe and a control module. The multi-function water quality monitoring probe includes a first signal electrode, a first sensing electrode, a second signal electrode and a second sensing electrode. The control module is connected to the probe. When the control module outputs a first time-variant signal to drive the first signal electrode, the first sensing electrode outputs a first water quality signal. When the control module outputs a second time-variant signal to drive the second signal electrode, the first sensing electrode and the second sensing electrode output the first sensing signal and a second sensing signal respectively. When the control module outputs the first time-variant signal and the second time-variant signal to simultaneously drive the first signal electrode and the second signal electrode, the first sensing electrode outputs the first water quality signal.Type: ApplicationFiled: December 18, 2020Publication date: June 24, 2021Inventors: SZU-JU LI, LI-DUAN TSAI, JUNG-HAO WANG, ZHI-SHENG HUANG, CHUN-LIN CHENG
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Publication number: 20200054248Abstract: An exercise state evaluation method having the following steps is provided. The steps includes: obtaining a plurality of sensing signals by a foot information sensing module; recording a receiving time of each of the sensing signals by a processing unit and generating a plurality of pressure values, a plurality of center of gravity values, and a center of gravity trajectory information corresponding a human body according to each of the sensing signals; determining a start time, an acting time and a finish time corresponding to an exercise according to the receiving time, the pressure values, the center of gravity values and the center of gravity trajectory information; obtaining an act time value according to the start time, the acting time and the finish time; and integrating the pressure values, the center of gravity values, the center of gravity trajectory information and the act time value to an user interface.Type: ApplicationFiled: August 15, 2019Publication date: February 20, 2020Applicants: Industrial Technology Research Institute, National Taiwan University of SportInventors: Jian-Hong Wu, Ren-Der Jean, Pin-Chou Li, Jyh-How Huang, Jung-Hao Wang, Szu-Ju Li
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Patent number: 10383537Abstract: A physiological signal measuring method and a physiological signal measuring device are provided. The physiological signal measuring method includes the following steps: A first inputting signal having a first frequency, a second inputting signal having a second frequency and a third inputting signal having a third frequency are respectively inputted to at least two electrode sheets attached on a skin. A first impedance value corresponding to the first inputting signal, a second impedance value corresponding to the second inputting signal and a third impedance value corresponding to the third inputting signal are respectively measured. An interference impedance between the electrode sheets and the skin is obtained according to the first frequency, the second frequency, the third frequency, the first impedance value, the second impedance value and the third impedance value. A measured physiological signal is corrected according to the interference impedance to obtain a corrected physiological signal.Type: GrantFiled: August 18, 2017Date of Patent: August 20, 2019Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Szu-Ju Li, Pai-Hao Wu, I-Cherng Chen, Hsin-Hung Pan, Jung-Hao Wang, Ren-Der Jean, Meng-Song Yin, Chun-Te Chuang
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Publication number: 20180168474Abstract: A physiological signal measuring method and a physiological signal measuring device are provided. The physiological signal measuring method includes the following steps: A first inputting signal having a first frequency, a second inputting signal having a second frequency and a third inputting signal having a third frequency are respectively inputted to at least two electrode sheets attached on a skin. A first impedance value corresponding to the first inputting signal, a second impedance value corresponding to the second inputting signal and a third impedance value corresponding to the third inputting signal are respectively measured. An interference impedance between the electrode sheets and the skin is obtained according to the first frequency, the second frequency, the third frequency, the first impedance value, the second impedance value and the third impedance value. A measured physiological signal is corrected according to the interference impedance to obtain a corrected physiological signal.Type: ApplicationFiled: August 18, 2017Publication date: June 21, 2018Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Szu-Ju LI, Pai-Hao WU, I-Cherng CHEN, Hsin-Hung PAN, Jung-Hao WANG, Ren-Der JEAN, Meng-Song YIN, Chun-Te CHUANG
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Patent number: 9823141Abstract: A sensing device has a first substrate, a second substrate, a plurality of sets of first electrodes, a plurality of second electrodes, a plurality of first axis signal lines, a plurality of second axis signal lines, and a plurality of second signal lines. The second substrate is above the first substrate and has a reset structure. The second electrodes are on the first surface of the second substrate in array. Each set of first electrodes is on the first substrate in array, corresponding to one of the plurality of second electrodes, and having at least one first axis electrode and at least one second axis electrode. The first axis electrode and the second axis electrode both partially overlap with the corresponding second electrode.Type: GrantFiled: January 25, 2016Date of Patent: November 21, 2017Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Szu-Ju Li, Jung-Hao Wang, Hsin-Hung Pan, Meng-Song Yin
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Publication number: 20160363489Abstract: A sensing device has a first substrate, a second substrate, a plurality of sets of first electrodes, a plurality of second electrodes, a plurality of first axis signal lines, a plurality of second axis signal lines, and a plurality of second signal lines. The second substrate is above the first substrate and has a reset structure. The second electrodes are on the first surface of the second substrate in array. Each set of first electrodes is on the first substrate in array, corresponding to one of the plurality of second electrodes, and having at least one first axis electrode and at least one second axis electrode. The first axis electrode and the second axis electrode both partially overlap with the corresponding second electrode.Type: ApplicationFiled: January 25, 2016Publication date: December 15, 2016Inventors: Szu-Ju Li, Jung-Hao Wang, Hsin-Hung Pan, Meng-Song Yin
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Patent number: 9087923Abstract: A monolithic compound semiconductor structure is disclosed. The monolithic compound semiconductor structure comprises a substrate, an n-type FET epitaxial structure, an n-type etching-stop layer, a p-type insertion layer, and an npn HBT epitaxial structure, and it can be used to form an FET, an HBT, or a thyristor.Type: GrantFiled: October 26, 2012Date of Patent: July 21, 2015Assignee: WIN SMICONDUTOR CORP.Inventors: Cheng-Kuo Lin, Szu-Ju Li, Rong-Hao Syu, Shu-Hsiao Tsai
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Patent number: 9019028Abstract: An integrated structure of compound semiconductor devices is disclosed. The integrated structure comprises from bottom to top a substrate, a first epitaxial layer, an etching-stop layer, a second epitaxial layer, a sub-collector layer, a collector layer, a base layer, and an emitter layer, in which the first epitaxial layer is a p-type doped layer, the second epitaxial layer is an n-type graded doping layer with a gradually increased or decreased doping concentration, and the sub-collector layer is an n-type doped layer. The integrated structure can be used to form an HBT, a varactor, or an MESFET.Type: GrantFiled: October 26, 2012Date of Patent: April 28, 2015Assignee: WIN Semiconductors Corp.Inventors: Cheng-Kuo Lin, Szu-Ju Li, Rong-Hao Syu, Shu-Hsiao Tsai
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Publication number: 20140069613Abstract: A cooling apparatus is disclosed. The cooling apparatus includes a carrier and a flat-plate type cooling conduit. The flat-plate type cooling conduit is made of a high thermal conductive material and disposed on or in the carrier. The flat-plate type cooling conduit includes a conduit portion and a flat plate portion. The conduit portion has a conducting hole for conducting a coolant, and the flat plate portion is adhered to the carrier for allowing the coolant to perform heat exchange through a large contact area between the flat plate portion and the carrier. In addition, a cooling source gel can be used to perform heat exchange with the coolant in the conducting hole in order to improve the heat exchange efficiency of the cooling apparatus, and to effectively reduce the temperature of the carrier.Type: ApplicationFiled: August 13, 2013Publication date: March 13, 2014Applicant: Industrial Technology Research InstituteInventors: Chia-Ming LIU, Lien-Tai CHEN, Tsing-Tang SONG, Chin-Tien YANG, Szu-Ju LI
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Publication number: 20130334570Abstract: An integrated structure of compound semiconductor devices is disclosed. The integrated structure comprises from bottom to top a substrate, a first epitaxial layer, an etching-stop layer, a second epitaxial layer, a sub-collector layer, a collector layer, a base layer, and an emitter layer, in which the first epitaxial layer is a p-type doped layer, the second epitaxial layer is an n-type graded doping layer with a gradually increased or decreased doping concentration, and the sub-collector layer is an n-type doped layer. The integrated structure can be used to form an HBT, a varactor, or an MESFET.Type: ApplicationFiled: October 26, 2012Publication date: December 19, 2013Applicant: WIN SEMICONDUCTORS CORP.Inventors: Cheng-Kuo LIN, Szu-Ju LI, Rong-Hao SYU, Shu-Hsiao TSAI
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Publication number: 20130334564Abstract: A monolithic compound semiconductor structure is disclosed. The monolithic compound semiconductor structure comprises a substrate, an n-type FET epitaxial structure, an n-type etching-stop layer, a p-type insertion layer, and an npn HBT epitaxial structure, and it can be used to form an FET, an HBT, or a thyristor.Type: ApplicationFiled: October 26, 2012Publication date: December 19, 2013Applicant: WIN SEMICONDUCTORS CORP.Inventors: Cheng-Kuo LIN, Szu-Ju LI, Rong-Hao SYU, Shu-Hsiao TSAI