Patents by Inventor Szu-Ping LEE
Szu-Ping LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11764277Abstract: A method for manufacturing a semiconductor structure includes forming a fin over a substrate, wherein the fin includes first semiconductor layers and second semiconductor layers alternating stacked. The method also includes forming an isolation feature around the fin, forming a dielectric feature over the isolation feature, forming a cap layer over the fin and the dielectric feature, oxidizing the cap layer to form an oxidized cap layer, forming source/drain features passing through the cap layer and in the fin, removing the second semiconductor layers in the fin to form nanostructures, and forming a gate structure wrapping around the nanostructures.Type: GrantFiled: June 4, 2021Date of Patent: September 19, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Fan Peng, Yuan-Ching Peng, Yu-Bey Wu, Yu-Shan Lu, Ying-Yan Chen, Yi-Cheng Li, Szu-Ping Lee
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Publication number: 20230253479Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.Type: ApplicationFiled: April 18, 2023Publication date: August 10, 2023Inventors: Ming-Jhe Sie, Chen-Huang Huang, Shao-Hua Hsu, Cheng-Chung Chang, Szu-Ping Lee, An Chyi Wei, Shiang-Bau Wang, Chia-Jen Chen
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Patent number: 11652155Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.Type: GrantFiled: May 24, 2022Date of Patent: May 16, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ming-Jhe Sie, Chen-Huang Huang, Shao-Hua Hsu, Cheng-Chung Chang, Szu-Ping Lee, An Chyi Wei, Shiang-Bau Wang, Chia-Jen Chen
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Publication number: 20230035349Abstract: In an embodiment, a method includes: forming a first fin and a second fin extending from a semiconductor substrate; depositing a liner layer along a first sidewall of the first fin, a second sidewall of the second fin, and a top surface of the semiconductor substrate, the liner layer formed of silicon oxynitride having a nitrogen concentration; depositing a fill material on the liner layer, the fill material formed of silicon; annealing the liner layer and the fill material, the annealing converting the fill material to silicon oxide, the annealing decreasing the nitrogen concentration of the liner layer; and recessing the liner layer and the fill material to form an isolation region between the first fin and the second fin.Type: ApplicationFiled: October 7, 2022Publication date: February 2, 2023Inventors: Wan-Yi Kao, Szu-Ping Lee, Che-Hao Chang, Chun-Heng Chen, Yung-Cheng Lu, Chi On Chui
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Publication number: 20220393012Abstract: A method for manufacturing a semiconductor structure includes forming a fin over a substrate, wherein the fin includes first semiconductor layers and second semiconductor layers alternating stacked. The method also includes forming an isolation feature around the fin, forming a dielectric feature over the isolation feature, forming a cap layer over the fin and the dielectric feature, oxidizing the cap layer to form an oxidized cap layer, forming source/drain features passing through the cap layer and in the fin, removing the second semiconductor layers in the fin to form nanostructures, and forming a gate structure wrapping around the nanostructures.Type: ApplicationFiled: June 4, 2021Publication date: December 8, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Fan PENG, Yuan-Ching PENG, Yu-Bey WU, Yu-Shan LU, Ying-Yan CHEN, Yi-Cheng LI, Szu-Ping LEE
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Patent number: 11469229Abstract: In an embodiment, a method includes: forming a first fin and a second fin extending from a semiconductor substrate; depositing a liner layer along a first sidewall of the first fin, a second sidewall of the second fin, and a top surface of the semiconductor substrate, the liner layer formed of silicon oxynitride having a nitrogen concentration in a range of 5% to 30%; depositing a fill material on the liner layer, the fill material formed of silicon; annealing the liner layer and the fill material, the annealing converting the fill material to silicon oxide, the annealing decreasing the nitrogen concentration of the liner layer to a range of 1% to 5%; and recessing the liner layer and the fill material to form an isolation region between the first fin and the second fin.Type: GrantFiled: January 15, 2021Date of Patent: October 11, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wan-Yi Kao, Szu-Ping Lee, Che-Hao Chang, Chun-Heng Chen, Yung-Cheng Lu, Chi On Chui
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Publication number: 20220285530Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.Type: ApplicationFiled: May 24, 2022Publication date: September 8, 2022Inventors: Ming-Jhe Sie, Chen-Huang Huang, Shao-Hua Hsu, Cheng-Chung Chang, Szu-Ping Lee, An Chyi Wei, Shiang-Bau Wang, Chia-Jen Chen
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Publication number: 20220231022Abstract: In an embodiment, a method includes: forming a first fin and a second fin extending from a semiconductor substrate; depositing a liner layer along a first sidewall of the first fin, a second sidewall of the second fin, and a top surface of the semiconductor substrate, the liner layer formed of silicon oxynitride having a nitrogen concentration in a range of 5% to 30%; depositing a fill material on the liner layer, the fill material formed of silicon; annealing the liner layer and the fill material, the annealing converting the fill material to silicon oxide, the annealing decreasing the nitrogen concentration of the liner layer to a range of 1% to 5%; and recessing the liner layer and the fill material to form an isolation region between the first fin and the second fin.Type: ApplicationFiled: January 15, 2021Publication date: July 21, 2022Inventors: Wan-Yi Kao, Szu-Ping Lee, Che-Hao Chang, Chun-Heng Chen, Yung-Cheng Lu, Chi On Chui
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Patent number: 11349014Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.Type: GrantFiled: June 30, 2020Date of Patent: May 31, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Jhe Sie, Chen-Huang Huang, Shao-Hua Hsu, Cheng-Chung Chang, Szu-Ping Lee, An Chyi Wei, Shiang-Bau Wang, Chia-Jen Chen
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Publication number: 20210408266Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.Type: ApplicationFiled: June 30, 2020Publication date: December 30, 2021Inventors: Ming-Jhe Sie, Chen-Huang Huang, Shao-Hua Hsu, Cheng-Chung Chang, Szu-Ping Lee, An Chyi Wei, Shiang-Bau Wang, Chia-Jen Chen
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Patent number: 10468409Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin structure protruding from a semiconductor substrate. The fin structure includes a first portion and an overlying second portion. The first portion is formed of a material that is the same as that of the semiconductor substrate and different from that of the second portion. The semiconductor device structure also includes a liner structure and an isolation feature. The liner structure includes a carbon-doped silicon oxide film covering the semiconductor substrate and the first portion of the first fin structure and a nitrogen-containing film over the carbon-doped silicon oxide film. The isolation feature is over the nitrogen-containing film and surrounded by the liner structure.Type: GrantFiled: March 14, 2018Date of Patent: November 5, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Szu-Ping Lee, Jian-Shiou Huang, Chih-Tang Peng, Sung-En Lin
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Publication number: 20190287971Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin structure protruding from a semiconductor substrate. The fin structure includes a first portion and an overlying second portion. The first portion is formed of a material that is the same as that of the semiconductor substrate and different from that of the second portion. The semiconductor device structure also includes a liner structure and an isolation feature. The liner structure includes a carbon-doped silicon oxide film covering the semiconductor substrate and the first portion of the first fin structure and a nitrogen-containing film over the carbon-doped silicon oxide film. The isolation feature is over the nitrogen-containing film and surrounded by the liner structure.Type: ApplicationFiled: March 14, 2018Publication date: September 19, 2019Inventors: Szu-Ping LEE, Jian-Shiou HUANG, Chih-Tang PENG, Sung-En LIN
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Patent number: 10335058Abstract: A chair enabling standardized performance testing under Timed Up and Go procedures. The chair has a seat portion, a base portion, a support element, a force sensor, a timer, and a processor. The processor initiates timing of the standardized performance test in response to receiving an output signal corresponding to a force value less than or equal to a minimum threshold force. The processor ceases timing of the standardized performance test in response to receiving an output signal corresponding to a force greater than or equal to a maximum threshold force. The processor determines a time interval of the standardized performance test based upon the output of the timer.Type: GrantFiled: November 14, 2014Date of Patent: July 2, 2019Assignee: The Board of Regents of the Nevada System of Higher Education on Behalf of the University of Nevada, Las VegasInventors: Szu-Ping Lee, Robbin Hickman, Janet Dufek
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Publication number: 20160249830Abstract: A chair enabling standardized performance testing under Timed Up and Go procedures. The chair has a seat portion, a base portion, a support element, a force sensor, a timer, and a processor. The processor initiates timing of the standardized performance test in response to receiving an output signal corresponding to a force value less than or equal to a minimum threshold force. The processor ceases timing of the standardized performance test in response to receiving an output signal corresponding to a force greater than or equal to a maximum threshold force. The processor determines a time interval of the standardized performance test based upon the output of the timer.Type: ApplicationFiled: November 14, 2014Publication date: September 1, 2016Inventors: Szu-Ping LEE, Robbin HICKMAN, Janet DUFEK