Patents by Inventor Szu-Ping TSAI

Szu-Ping TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF
    Publication number: 20240337918
    Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.
    Type: Application
    Filed: June 20, 2024
    Publication date: October 10, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Yi TSAI, Wei-Che HSIEH, Ta-Cheng LIEN, Hsin-Chang LEE, Ping-Hsun LIN, Hao-Ping CHENG, Ming-Wei CHEN, Szu-Ping TSAI
  • EUV photo masks and manufacturing method thereof
    Patent number: 12044959
    Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.
    Type: Grant
    Filed: February 27, 2023
    Date of Patent: July 23, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hung-Yi Tsai, Wei-Che Hsieh, Ta-Cheng Lien, Hsin-Chang Lee, Ping-Hsun Lin, Hao-Ping Cheng, Ming-Wei Chen, Szu-Ping Tsai
  • EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF
    Publication number: 20230205072
    Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.
    Type: Application
    Filed: February 27, 2023
    Publication date: June 29, 2023
    Inventors: Hung-Yi TSAI, Wei-Che HSIEH, Ta-Cheng LIEN, Hsin-Chang LEE, Ping-Hsun LIN, Hao-Ping CHENG, Ming-Wei CHEN, Szu-Ping TSAI
  • EUV photo masks and manufacturing method thereof
    Patent number: 11592737
    Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.
    Type: Grant
    Filed: November 24, 2020
    Date of Patent: February 28, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Yi Tsai, Wei-Che Hsieh, Ta-Cheng Lien, Hsin-Chang Lee, Ping-Hsun Lin, Hao-Ping Cheng, Ming-Wei Chen, Szu-Ping Tsai
  • EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF
    Publication number: 20210373430
    Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.
    Type: Application
    Filed: November 24, 2020
    Publication date: December 2, 2021
    Inventors: Hung-Yi TSAI, Wei-Che HSIEH, Ta-Cheng LIEN, Hsin-Chang LEE, Ping-Hsun LIN, Hao-Ping CHENG, Ming-Wei CHEN, Szu-Ping TSAI