Abstract: An acoustic scene conversion method, comprising: receiving sound signals including user's speech and scenic sounds; processing the sound signals according to an artificial intelligence model to generate enhanced speech signals without scenic sounds; and mixing the enhanced speech signals with new scenic sounds to produce converted sound signals.

Abstract: An acoustic scene conversion method, comprising: receiving sound signals including user's speech and scenic sounds; processing the sound signals according to an artificial intelligence model to generate enhanced speech signals without scenic sounds; and mixing the enhanced speech signals with new scenic sounds to produce converted sound signals.

Abstract: The invention provides a light emitting diode package structure, including: a light emitting diode chip formed on a substrate; a composite coating layer formed on the light emitting diode chip, wherein the composite coating layer comprises a first coating layer and a second coating layer, and the composite coating layer has a reflectivity greater than 95% at the wavelength of 500-800 nm; a cup body formed on the substrate, wherein the cup body surrounds the light emitting diode chip; and an encapsulation housing covering the light emitting diode chip, wherein the encapsulation housing comprises a wavelength transformation material.

Abstract: A semiconductor light emitting device, including a substrate, an epitaxy layer and an interference thin film is provided. The substrate has a first surface and a second surface opposite to the first surface. The epitaxy layer is disposed on the first surface. The interference thin film is disposed on the second surface. The interference thin film is formed by a plurality of first-material thin films and a plurality of second-material thin films alternately stacked with one another. The difference in refractive index between the first-material and second-material thin films is at least 0.7. The reflection spectrum of the interference thin film has at least one pass band, which allows an incident light of a specific wavelength to pass through. For example, the central wavelength of the incident light ranges 532±10 nm or 1064±10 nm, and the reflectance of the incident light is smaller than 40%.

Abstract: The invention provides a light emitting diode package structure, including: a light emitting diode chip formed on a substrate; a composite coating layer formed on the light emitting diode chip, wherein the composite coating layer comprises a first coating layer and a second coating layer, and the composite coating layer has a reflectivity greater than 95% at the wavelength of 500-800 nm; a cup body formed on the substrate, wherein the cup body surrounds the light emitting diode chip; and an encapsulation housing covering the light emitting diode chip, wherein the encapsulation housing comprises a wavelength transformation material.