Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate having a first surface, a plurality of layers disposed on the first surface of the substrate. The plurality of layers includes a first nitride layer disposed on the first surface of the substrate, a first silicon-containing layer disposed on the first nitride layer, an intermediate nitride layer disposed on the first silicon-containing layer, a second silicon-containing layer disposed on the intermediate nitride layer, and a second nitride layer disposed on the second silicon-containing layer. In addition, the semiconductor structure includes a trench capacitor penetrating the plurality of layers and in contact with the substrate. The trench capacitor has a first portion having a first lateral surface and a second portion having a second lateral surface, and the first lateral surface has a slope different from that of the second lateral surface.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate having a first surface, a plurality of layers disposed on the first surface of the substrate. The plurality of layers includes a first nitride layer disposed on the first surface of the substrate, a first silicon-containing layer disposed on the first nitride layer, an intermediate nitride layer disposed on the first silicon-containing layer, a second silicon-containing layer disposed on the intermediate nitride layer, and a second nitride layer disposed on the second silicon-containing layer. In addition, the semiconductor structure includes a trench capacitor penetrating the plurality of layers and in contact with the substrate. The trench capacitor has a first portion having a first lateral surface and a second portion having a second lateral surface, and the first lateral surface has a slope different from that of the second lateral surface.

Abstract: A method for manufacturing a semiconductor structure is provided. First, a first insulating layer is formed over a substrate, and a second insulating layer having an opening is formed over the first insulating layer. A conductive line structure is formed in the opening of the second insulating layer, thereby forming a contact void between the second insulating layer and the conductive line structure. A plasma oxide layer is conformally formed over the conductive line structure, the first insulating layer, and the contact void. A nitride capping layer is formed over the plasma oxide layer to fill the contact void. Then, nitrogen ions are introduced into a surface of the nitride capping layer surrounding the conductive line structure. An etching back process is performed to remove a portion of the nitride capping layer, thereby forming a refilled contact void between the first insulating layer and the conductive line structure.

Abstract: A method for manufacturing a semiconductor structure is provided. First, a first insulating layer is formed over a substrate, and a second insulating layer having an opening is formed over the first insulating layer. A conductive line structure is formed in the opening of the second insulating layer, thereby forming a contact void between the second insulating layer and the conductive line structure. A plasma oxide layer is conformally formed over the conductive line structure, the first insulating layer, and the contact void. A nitride capping layer is formed over the plasma oxide layer to fill the contact void. Then, nitrogen ions are introduced into a surface of the nitride capping layer surrounding the conductive line structure. An etching back process is performed to remove a portion of the nitride capping layer, thereby forming a refilled contact void between the first insulating layer and the conductive line structure.