Abstract: In some embodiments, an integrated circuit device includes multiple rows of functional cells, with each row having a cell height. At least one of rows of functional cells includes at least one digital low-dropout voltage regulator (DLVR) cell with the cell height for the row. The DLVR cell includes: an input terminal, an output terminal, a voltage supply terminal, a reference voltage terminal, and one or more pairs of transistors. Each pair of transistors are arranged in cascode configuration connected between the voltage supply terminal and output terminal. The gate of one of the transistors the cascode configuration is connected to the input terminal, and the gate of the other transistor in the cascode configuration is connected to the reference voltage terminal. The four terminals each comprises a metal track in the bottom metal layer and disposed within the cell height.

Abstract: An electronic device and a method for manufacturing the same are disclosed. The electronic device of the present disclosure comprises: a target unit comprising an electronic unit layer; and small molecule residues adhered on a side of the target unit, wherein the small molecule residues are at least one selected from the group consisting of and R1, R1?, R2, R2?, R3, R3?, R4, R5, R6, R7, R8 are defined in the specification.

Abstract: A semiconductor packaging structure comprises a die; at least one pad on the die; a least one elastomers on a corresponding one of the at least one pad, wherein the at least one elastomer is made of conductive or non-conductive material; a first conductor on the elastomer; a second conductor located on the first conductor. The second conductor is directly welded to a substrate. Thermal expansion between the substrate and the die is absorbed by the strain of the elastomer and the extension of the first conductor. Furthermore, a method for forming the semiconductor packaging structure is disclosed.