Patents by Inventor Szuheng Ho

Szuheng Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220336227
    Abstract: Methods for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.
    Type: Application
    Filed: July 5, 2022
    Publication date: October 20, 2022
    Inventors: TAKASHI KURATOMI, AVGERINOS GELATOS, TAE HONG HA, XUESONG LU, SZUHENG HO, WEI LEI, MARK LEE, RAYMOND HUNG, XIANMIN TANG
  • Patent number: 11424132
    Abstract: Methods and apparatus for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a titanium nitride layer on the titanium layer using an atomic layer deposition (ALD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: August 23, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Takashi Kuratomi, Avgerinos Gelatos, Tae Hong Ha, Xuesong Lu, Szuheng Ho, Wei Lei, Mark Lee, Raymond Hung, Xianmin Tang
  • Publication number: 20200144073
    Abstract: Methods and apparatus for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a titanium nitride layer on the titanium layer using an atomic layer deposition (ALD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.
    Type: Application
    Filed: October 2, 2019
    Publication date: May 7, 2020
    Inventors: TAKASHI KURATOMI, AVGERINOS GELATOS, TAE HONG HA, XUESONG LU, SZUHENG HO, WEI LEI, MARK LEE, RAYMOND HUNG, XIANMIN TANG
  • Patent number: 10164216
    Abstract: The present application discloses an organic light emitting diode base substrate including a support substrate and a light outcoupling layer on the support substrate for enhancing light outcoupling efficiency of an organic light emitting display substrate, the light outcoupling layer having a corrugated surface on a side of the light outcoupling layer distal to the support substrate. The light outcoupling layer including a polymer material having a gradient distribution in a direction from the corrugated surface to the support substrate.
    Type: Grant
    Filed: August 22, 2016
    Date of Patent: December 25, 2018
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Rajendra Acharya, Xiangyu Fu, Cheng Peng, Ying Chen, Shuyi Liu, Franky So, Kirk S. Schanze, Szuheng Ho
  • Publication number: 20180069197
    Abstract: The present application discloses an organic light emitting diode base substrate including a support substrate and a light outcoupling layer on the support substrate for enhancing light outcoupling efficiency of an organic light emitting display substrate, the light outcoupling layer having a corrugated surface on a side of the light outcoupling layer distal to the support substrate. The light outcoupling layer including a polymer material having a gradient distribution in a direction from the corrugated surface to the support substrate.
    Type: Application
    Filed: August 22, 2016
    Publication date: March 8, 2018
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Rajendra Acharya, Xiangyu Fu, Cheng Peng, Ying Chen, Shuyi Liu, Franky So, Kirk S. Schanze, Szuheng Ho