Patents by Inventor Szymon Stanczyk

Szymon Stanczyk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • AlInGaN-based superluminescent diode
    Patent number: 11139414
    Abstract: The invention relates to an AlInGaN alloy based superluminescent diode, comprising a gallium nitride bulk substrate, a lower cladding layer with n-type electrical conductivity. Further it includes a lower light-guiding layer with n-type electrical conductivity, a light emitting layer, an electron blocking layer with p-type electrical conductivity, an upper light-guiding layer, an upper cladding layer with p-type electrical conductivity, and a subcontact layer with p-type electrical conductivity. The gallium nitride bulk substrate has a spatially varying surface misorientation in the relation to the crystallographic plane M in range of 0° to 10°.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: October 5, 2021
    Assignees: TOPGAN SP. Z O.O.
    Inventors: Kafar Anna, Szymon Stanczyk, Anna Nowakowska-Siwinska, Marcin Sarzynski, Tadeusz Suski, Piotr Perlin
  • AlInGaN-BASED SUPERLUMINESCENT DIODE
    Publication number: 20200259043
    Abstract: The invention relates to an AlInGaN alloy based superluminescent diode, comprising a gallium nitride bulk substrate, a lower cladding layer with n-type electrical conductivity. Further it includes a lower light-guiding layer with n-type electrical conductivity, a light emitting layer, an electron blocking layer with p-type electrical conductivity, an upper light-guiding layer, an upper cladding layer with p-type electrical conductivity, and a subcontact layer with p-type electrical conductivity. The gallium nitride bulk substrate has a spatially varying surface misorientation in the relation to the crystallographic plane M in range of 0° to 10°.
    Type: Application
    Filed: September 23, 2016
    Publication date: August 13, 2020
    Inventors: Kafar Anna, Szymon Stanczyk, Anna Nowakowska-Siwinska, Marcin Sarzynski, Tadeusz Suski, Piotr Perlin
  • AlInGaN alloy based laser diode
    Patent number: 10439362
    Abstract: The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminum content.
    Type: Grant
    Filed: November 10, 2016
    Date of Patent: October 8, 2019
    Assignees: TOPGAN SP. Z O.O., INST. WYSOKICH CISNIEN POLSKIEJ AKADEMII NAUK
    Inventors: Szymon Stanczyk, Anna Kafar, Tadeusz Suski, Szymon Grzanka, Robert Czernecki, Piotr Perlin
  • AlInGaN ALLOY BASED LASER DIODE
    Publication number: 20180331501
    Abstract: The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminium content.
    Type: Application
    Filed: November 10, 2016
    Publication date: November 15, 2018
    Inventors: Szymon Stanczyk, Anna Kafar, Tadeusz Suski, Szymon Grzanka, Robert Czernecki, Piotr Perlin