Patents by Inventor T. Frank Wang

T. Frank Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7605088
    Abstract: This invention is directed to a process for etching a semiconductor device using an etchant composition to form a predetermined etched pattern therein. The semiconductor device typically has a plurality of layers. At least one of the layers comprises a refractory metal, refractory metal alloy or refractory metal silicide. The etchant composition contains a high concentration of chlorine. The source (or TCP) power is decreased over that of conventional methods, and the bias (or RF) power is increased. Using such an etchant composition, along with the adjusted power levels, uniform etching and increased oxide selectivity is achieved.
    Type: Grant
    Filed: June 28, 2006
    Date of Patent: October 20, 2009
    Assignee: Cypress Semiconductor Corporation
    Inventor: T. Frank Wang
  • Patent number: 7084066
    Abstract: This invention is directed to a process for etching a semiconductor device using an etchant composition to form a predetermined etched pattern therein. The semiconductor device typically has a plurality of layers. At least one of the layers comprises a refractory metal, refractory metal alloy or refractory metal silicide. The etchant composition contains a high concentration of chlorine. The source (or TCP) power is decreased over that of conventional methods, and the bias (or RF) power is increased. Using such an etchant composition, along with the adjusted power levels, uniform etching and increased oxide selectivity is achieved.
    Type: Grant
    Filed: July 3, 2000
    Date of Patent: August 1, 2006
    Assignee: Cypress Semiconductor Corporation
    Inventor: T. Frank Wang