Patents by Inventor T. S. Ravi

T. S. Ravi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deposition of low dielectric constant thin film without use of an oxidizer
    Patent number: 6331494
    Abstract: An organic precursor compound is gasified and fed into the reaction chamber of a high density plasma chemical vapor deposition (HDP-CVD) reactor. The organic precursor comprises silicon, oxygen and carbon atoms. No reactive oxygen gas or other oxidizer is used in the reaction chamber. A thin film of carbon-containing low dielectric constant silicon oxide material is deposited and simultaneously etched in the reaction chamber to fill a gap having a high aspect ratio with low dielectric constant insulator material.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: December 18, 2001
    Assignee: Novellus Systems, Inc.
    Inventors: Darin Scott Olson, T. S. Ravi