Abstract: Metal nitride coatings are deposited effectively by the decomposition of single source metal imido-amido-amine precursors prepared by the reaction of a pentavalent metal halide with a primary amine or hydrazine. With hydrazine-derived precursors, TaN coatings may be deposited at temperatures as low as 400 degrees Celcius or lower.

Abstract: Metal nitride coatings are deposited effectively by the decomposition of single source metal imido-amidoamine precursors perpared by the reaction of a pentavalent metal halide with a primary amine or hydrazine. With hydrazine-derived precursors, TaN coatings may be deposited at temperatures as low as 400 degrees Celcius or lower.

Abstract: Reaction products of metal halides with organic chalcogenides and dichalcogenides provide single source precursors for metal dichalcogenide coatings. The single source precursors are sublimed at reduced pressure and allowed to contact a substrate maintained at an elevated temperature. The resulting dichalcogenide coatings are smooth, and adherent, and may be utilized in numerous applications, for example, as cathodes for lithium batteries.

Abstract: A process for depositing a film of metal pnictogenide. The process comprises providing a single source of a metal pnictogenide and heating said source to a temperature sufficient to sublime the single source at a pressure selected from a range of about 0.0001 to 760 torr so that a sublimate is delivered into a reaction zone. Within this reaction zone, a substrate is provided upon which deposition may occur. The reaction zone is heated to approximately 200.degree.-800.degree. C. The sublimate is passed through this reaction zone and over the substrate to produce a thin film of metal pnictogenide which is deposited upon the substrate.

Abstract: A process for depositing a film of metal chalcogenide is disclosed. The process comprises providing a single source of a metal chalcogenide and heating said source to a temperature sufficient to sublime the single source under a pressure ranging from 0.0001 to 760 torr so that the sublimate is delivered into a reaction zone. Within this reaction zone, a substrate is deposed upon which deposition may occur. The reaction zone is heated to approximately 200.degree. to 800.degree. C. The sublimate is passed through this reaction zone and over the substrate to produce a thin film of metal chalcogenide which is deposited upon the substrate.

Abstract: A process for depositing a dense, thin film of a metal chalcogenide under high deposition rates is disclosed. The process comprises providing a source of vaporous metal halide so that it is delivered into a reaction zone provided with an inlet for the introduction thereof. A source of vaporous chalcogen is provided in communication with the inlet to promote an efficient intermixing of the chalcogen with the vaporous metal halide. Located downstream from the inlet in a reaction zone is a surface upon which deposition may occur. The reaction zone is heated to about 200-800 degrees Centigrade, and the reaction zone is then flushed with the chalcogen transported by an inert carrier gas. The carrier gas is passed with the metal halide and the chalcogen into the reaction zone across said substrate at atmospheric pressure. Thereupon, the vaporous metal halide and the vaporous chalcogen interact in the reaction zone to produce a film of metal chalcogenide which is deposited on the substrate.