Abstract: A method includes forming a multi-layered reflective layer over a substrate; depositing a metal capping layer over the multi-layered reflective layer; depositing a first metal oxide layer over the metal capping layer; depositing a metal nitride layer over the first metal oxide layer; depositing a second metal oxide layer over the metal nitride layer; forming a plurality of features on the second metal oxide layer and the metal nitride layer.

Abstract: A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.

Abstract: The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.

Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.

Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.

Abstract: In a method of manufacturing an attenuated phase shift mask, a photo resist pattern is formed over a mask blank. The mask blank includes a transparent substrate, an etch stop layer on the transparent substrate, a phase shift material layer on the etch stop layer, a hard mask layer on the phase shift material layer and an intermediate layer on the hard mask layer. The intermediate layer is patterned by using the photo resist pattern as an etching mask, the hard mask layer is patterned by using the patterned intermediate layer as an etching mask, and the phase shift material layer is patterned by using the patterned hard mask layer as an etching mask. The intermediate layer includes at least one of a transition metal, a transition metal alloy, or a silicon containing material, and the hard mask layer is made of a different material than the intermediate layer.

Abstract: The present disclosure provides an apparatus for a lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame including a material selected from the group consisting of boron nitride (BN), boron carbide (BC), and a combination thereof, a mask, a first adhesive layer that secures the pellicle membrane to the pellicle frame, and a second adhesive layer that secures the pellicle frame to the mask.

Abstract: A salt spray resistant structure of fan motor assembly includes a silicon steel sheet assembly, an insulation support assembly and an encapsulation layer. An inner side of the silicon steel sheet assembly defines a connection hole. A winding assembly is wound on the silicon steel sheet assembly and electrically connected with a circuit board. A first extension section protrudes from the silicon steel sheet assembly into the connection hole to cover a part of the inner side. A bearing cup covers the other part of the inner side. The encapsulation layer encapsulates the insulation support assembly, the winding assembly, the silicon steel sheet assembly and the circuit board so as to achieve salt spray resistant effect.

Abstract: A series fan structure with multistage frame body includes a first main body, a second main body, a first frame and a second frame. The first main body has a first fan frame having a first opening and a second opening. The second main body is correspondingly serially connected to the first main body. The second main body has a second fan frame having a third opening and a fourth opening. The third opening corresponds to the second opening. The first frame is correspondingly serially connected to one side of the first fan frame with the first opening. The first frame and the first fan frame together define a first flow passage. The second frame is correspondingly serially connected to one side of the second fan frame with the fourth opening. The second frame and the second fan frame together define a second flow passage.

Abstract: A series fan structure with multistage frame body includes a first main body, a second main body, a first frame and a second frame. The first main body has a first fan frame having a first opening and a second opening. The second main body is correspondingly serially connected to the first main body. The second main body has a second fan frame having a third opening and a fourth opening. The third opening corresponds to the second opening. The first frame is correspondingly serially connected to one side of the first fan frame with the first opening. The first frame and the first fan frame together define a first flow passage. The second frame is correspondingly serially connected to one side of the second fan frame with the fourth opening. The second frame and the second fan frame together define a second flow passage.

Abstract: A reinforced fan frame structure includes a frame body and at least one metal ring. The frame body has a seat portion with a centered bearing cup axially forward extended from the seat portion. The metal ring is integrally associated with the seat portion and has an inner circumferential edge facing toward the bearing cup. With the metal ring integrally associated with the seat portion of the frame body, it is able to effectively control the deformation and the flatness of the seat portion and accordingly, effectively upgrade the overall structural strength of the seat portion.