Abstract: A micro light-emitting diode display device includes a substrate, a first planarization layer, a first light-emitting element, and a second planarization layer. The first planarization layer is disposed on the substrate and has a first opening. The first opening has a first opening inner wall. The first light-emitting element is disposed on the substrate, in the first opening, and separated from the first opening inner wall. The second planarization layer is disposed on the substrate and between the first planarization layer and the first light-emitting element. The second planarization layer is in contact with the first light-emitting element.

Abstract: An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.

Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.

Abstract: In a method of manufacturing an attenuated phase shift mask, a photo resist pattern is formed over a mask blank. The mask blank includes a transparent substrate, an etch stop layer on the transparent substrate, a phase shift material layer on the etch stop layer, a hard mask layer on the phase shift material layer and an intermediate layer on the hard mask layer. The intermediate layer is patterned by using the photo resist pattern as an etching mask, the hard mask layer is patterned by using the patterned intermediate layer as an etching mask, and the phase shift material layer is patterned by using the patterned hard mask layer as an etching mask. The intermediate layer includes at least one of a transition metal, a transition metal alloy, or a silicon containing material, and the hard mask layer is made of a different material than the intermediate layer.

Abstract: The present disclosure provides an apparatus for a lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame including a material selected from the group consisting of boron nitride (BN), boron carbide (BC), and a combination thereof, a mask, a first adhesive layer that secures the pellicle membrane to the pellicle frame, and a second adhesive layer that secures the pellicle frame to the mask.

Abstract: Herein disclosed is a device for testing batteries as subjects and a method thereof. The battery testing device comprises a power supply module and a short-circuit sensing module. The power supply module is configured to provide a first testing voltage or a first testing current. The short-circuit sensing module, coupled with the power supply module, is configured to integrate the first testing voltage or current during a first testing period, thereby calculating a first output energy provided by the power supply module. The short-circuit sensing module also determines whether the first output energy exceeds a predetermined energy range; when the range is exceeded, the same module generates an error signal. Wherein the short-circuit sensing module generates an error count by calculating during a second testing period the number of times the short-circuit sensing module generates the error signal.

Abstract: Herein disclosed is a device for testing batteries as subjects and a method thereof. The battery testing device comprises a power supply module and a short-circuit sensing module. The power supply module is configured to provide a first testing voltage or a first testing current. The short-circuit sensing module, coupled with the power supply module, is configured to integrate the first testing voltage or current during a first testing period, thereby calculating a first output energy provided by the power supply module. The short-circuit sensing module also determines whether the first output energy exceeds a predetermined energy range; when the range is exceeded, the same module generates an error signal. Wherein the short-circuit sensing module generates an error count by calculating during a second testing period the number of times the short-circuit sensing module generates the error signal.

Abstract: An ESD protection device includes a substrate of a first conductivity type, a well region of a second conductivity type, a first doped region of the second conductivity type, a second doped region of the first conductivity type, a third doped region of the second conductivity type, a fourth doped region of the first conductivity type. The well region is configured in the substrate. The first doped region is configured in the well region. The second doped region is configured in the well region and surrounding the first doped region. The third doped region is configured in the well region and surrounding the first doped region and the second doped region. The fourth doped region is configured in the well region and under the first doped region and the second doped region. The fourth doped region is coupled with the first doped region and with the second doped region, respectively.

Abstract: A lateral silicon controlled rectifier structure includes a P-type substrate; an N-well region in the P-type substrate; a first P+ doped region in the N-well region and being connected to an anode; a P-well region in the P-type substrate and bordering upon the N-well region; a first N+ doped region formed in the P-well region and separated from the first P+ doped region by a spacing distance, the first N+ doped region being connected to a cathode; and a gate structure overlying a portion of the P-type substrate between the first P+ doped region and the first N+ doped region.

Abstract: A lateral silicon controlled rectifier structure includes a P-type substrate; an N-well region in the P-type substrate; a first P+ doped region in the N-well region and being connected to an anode; a P-well region in the P-type substrate and bordering upon the N-well region; a first N+ doped region formed in the P-well region and separated from the first P+ doped region by a spacing distance, the first N+ doped region being connected to a cathode; and a gate structure overlying a portion of the P-type substrate between the first P+ doped region and the first N+ doped region.

Abstract: An ESD protection device includes a substrate of a first conductivity type, a well region of a second conductivity type, a first doped region of the second conductivity type, a second doped region of the first conductivity type, a third doped region of the second conductivity type, a fourth doped region of the first conductivity type. The well region is configured in the substrate. The first doped region is configured in the well region. The second doped region is configured in the well region and surrounding the first doped region. The third doped region is configured in the well region and surrounding the first doped region and the second doped region. The fourth doped region is configured in the well region and under the first doped region and the second doped region. The fourth doped region is coupled with the first doped region and with the second doped region, respectively.

Abstract: An ESD protection device includes a p-well with first protrudent portions, an N-well with second protrudent portions, a P-well/N-well boundary, a PMOS transistor disposed in the N-well, an NMOS transistor disposed in the P-well, first P+ diffusion regions in the first protrudent portions, first N+ diffusion regions in the second protrudent portions, second P+ diffusion regions disposed between the PMOS transistor and the second protrudent portions, second N+ diffusion regions disposed between the NMOS transistor and the first protrudent portions, third P+ diffusion regions disposed between the NMOS transistor, the boundary, and two adjacent second P+ diffusion regions, and third N+ diffusion regions disposed between the PMOS transistor, the boundary, and two adjacent second N+ diffusion regions, wherein the first and second protrudent portions are interlacedly arranged at the boundary.

Abstract: A PG wire routing optimization tool for more efficiently routing PG wires in a layout design of an integrated circuit. The PG wire routing optimization tool analyzes a routing of the wires of a power and ground network for unacceptable IR-drops or electromigration problems. If one or more problems are discovered, the PG wire routing optimization tool determines design constraints for the wires that will correct the identified problems. It then initiates a floor planning tool to implement these corrective design constraints in the floor plan design. The PG wire routing optimization tool may alternately or additionally determine design constraints that will minimize the area of the wiring but will avoid creating new IR-drop or electromigration problems. It will then initiate a floor planning tool to implement these optimizing design constraints in the floor plan design.

Abstract: A PG wire routing optimization tool for more efficiently routing PG wires in a layout design of an integrated circuit. The PG wire routing optimization tool analyzes a routing of the wires of a power and ground network for unacceptable IR-drops or electromigration problems. If one or more problems are discovered, the PG wire routing optimization tool determines design constraints for the wires that will correct the identified problems. It then initiates a floor planning tool to implement these corrective design constraints in the floor plan design. The PG wire routing optimization tool may alternately or additionally determine design constraints that will minimize the area of the wiring but will avoid creating new IR-drop or electromigration problems. It will then initiate a floor planning tool to implement these optimizing design constraints in the floor plan design.

Abstract: A method for forming polysilicon connected deep trench DRAM cell. The method at least includes the following steps. First of all, a substrate is provided. Then, a buried plate drives in the substrate. Then, a capacitor dielectric layer is formed to fill into a lower portion of the deep trench. Next, a dielectric collar layer is formed on a sidewall of the deep trench about the capacitor dielectric layer. Then, a selective growth polysilicon layer is formed to fill into the deep trench of the opening. Then, the shallow trench isolation structure is formed in sidewall of the deep trench. Next, a metal-oxide-semiconductor transistor is formed on the substrate. Next, a spacer is formed on sidewall of the metal-oxide semiconductor transistor. Finally, a polysilicon layer is formed on the metal-oxide-semiconductor transistor.

Abstract: A DRAM circuitry includes a DRAM cell that is connected at a first end to a bit line, at a second end to a plate line, and at a third end to a word line, and a sensing amplifier that is electrically connected to the DRAM cell for refreshing the DRAM cell and reading data from the DRAM cell. The sensing amplifier can change a potential of the bit line and a potential of the plate line to write data into the DRAM cell when the word line is turned on.

Abstract: A sponge mop assembly includes a handle and a frame is pivotally connected to the handle. A sponge is movably connected to the frame and located between two squeezing members on the frame. A lever is pivotally connected to the handle and a link device is connected between the lever and the sponge. A sphere is connected to the handle and rotatably obtained in a neck on the frame so that the handle is positioned at angle relative to the frame. Each squeezing member has an extension extending in a direction away from the sponge so that when the squeezing members are rotated to squeeze the sponge, the extensions squeeze the lower portion of the sponge to remove water in the sponge.