Patents by Inventor Ta-Cheng Wei

Ta-Cheng Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11635388
    Abstract: A method for manufacturing modified metal nanoparticles includes steps as follows. Metal nanoparticles are provided, wherein each of the metal nanoparticles is a gold nanoparticle or a silver nanoparticle. An ascorbic acid solution is provided, wherein the ascorbic acid solution includes ascorbic acid molecules and/or ascorbic acid ions. A surface modification step is conducted, wherein the metal nanoparticles and the ascorbic acid solution are mixed, such that surfaces of the metal nanoparticles are modified by the ascorbic acid molecules and/or ascorbic acid ions to obtain the modified metal nanoparticles.
    Type: Grant
    Filed: December 17, 2020
    Date of Patent: April 25, 2023
    Assignee: National Cheng Kung University
    Inventors: Chia-Yun Chen, Ta-Cheng Wei, Tzu-Yu Ou, Meng-Chen Lo
  • Patent number: 11466035
    Abstract: A method for manufacturing a silver-carbon composite includes steps as follows. A carbon-containing solution is provided, wherein a carbon-containing material is subjected to a calcination step and is dissolved by a solvent to obtain the carbon-containing solution. The carbon-containing solution includes a plurality of carbon nanodots, and the carbon nanodots are negatively charged. A silver ion-containing solution is provided, wherein the silver ion-containing solution includes a plurality of silver ions. The carbon-containing solution and the silver ion-containing solution are mixed to obtain a mixed solution. The mixed solution is heated, such that at least one of the silver ions is reduced on at least one of the carbon nanodots to obtain the silver-carbon composite.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: October 11, 2022
    Assignee: National Cheng Kung University
    Inventors: Chia-Yun Chen, Po-Hsuan Hsiao, Ta-Cheng Wei
  • Publication number: 20220163454
    Abstract: A method for manufacturing modified metal nanoparticles includes steps as follows. Metal nanoparticles are provided, wherein each of the metal nanoparticles is a gold nanoparticle or a silver nanoparticle. An ascorbic acid solution is provided, wherein the ascorbic acid solution includes ascorbic acid molecules and/or ascorbic acid ions. A surface modification step is conducted, wherein the metal nanoparticles and the ascorbic acid solution are mixed, such that surfaces of the metal nanoparticles are modified by the ascorbic acid molecules and/or ascorbic acid ions to obtain the modified metal nanoparticles.
    Type: Application
    Filed: December 17, 2020
    Publication date: May 26, 2022
    Inventors: Chia-Yun Chen, Ta-Cheng Wei, Tzu-Yu Ou, Meng-Chen Lo
  • Publication number: 20210238199
    Abstract: A method for manufacturing a silver-carbon composite includes steps as follows. A carbon-containing solution is provided, wherein a carbon-containing material is subjected to a calcination step and is dissolved by a solvent to obtain the carbon-containing solution. The carbon-containing solution includes a plurality of carbon nanodots, and the carbon nanodots are negatively charged. A silver ion-containing solution is provided, wherein the silver ion-containing solution includes a plurality of silver ions. The carbon-containing solution and the silver ion-containing solution are mixed to obtain a mixed solution. The mixed solution is heated, such that at least one of the silver ions is reduced on at least one of the carbon nanodots to obtain the silver-carbon composite.
    Type: Application
    Filed: April 14, 2020
    Publication date: August 5, 2021
    Inventors: Chia-Yun Chen, Po-Hsuan Hsiao, Ta-Cheng Wei
  • Publication number: 20210020669
    Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a metal catalyst layer on an etching area of the semiconductor substrate; performing a wet etch process to the semiconductor substrate to etch the etching area of the semiconductor substrate under the metal catalyst layer, thereby forming a trench in the semiconductor substrate; and removing the metal catalyst layer from the semiconductor substrate after performing the wet etch process.
    Type: Application
    Filed: July 15, 2019
    Publication date: January 21, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chin-Yu LIN, Keng-Ying LIAO, Huai-Jen TUNG, Po-Zen CHEN, Su-Yu YEH, Chia-Yun CHEN, Ta-Cheng WEI
  • Patent number: 10879289
    Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a metal catalyst layer on an etching area of the semiconductor substrate; performing a wet etch process to the semiconductor substrate to etch the etching area of the semiconductor substrate under the metal catalyst layer, thereby forming a trench in the semiconductor substrate; and removing the metal catalyst layer from the semiconductor substrate after performing the wet etch process.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chin-Yu Lin, Keng-Ying Liao, Huai-Jen Tung, Po-Zen Chen, Su-Yu Yeh, Chia-Yun Chen, Ta-Cheng Wei