Abstract: A golf club head alloy includes 5.5-8 parts by weight of aluminum, 1.7-3.3 parts by weight of molybdenum, 1.7-2.3 parts by weight of vanadium, and at least one of not greater than 2 parts by weight and greater than 0 parts by weight of chromium, not greater than 0.35 parts by weight and greater than 0 parts by weight of silicon, 0.15-1.3 parts by weight of iron, 0.05-0.2 parts by weight of boron, and 2.5-3.5 parts by weight of tin, with the balance being titanium.

Abstract: A golf club head alloy is used to solve the problem of insufficient strength of conventional golf club heads. The golf club head alloy comprises 8-9 wt % of aluminum, 3.5-4.5 wt % of vanadium, ?2 wt % of molybdenum, with the balance being titanium and inevitable impurities. A golf club head produced from the golf club head alloy and a heat treatment method for the golf club head alloy are also disclosed.

Abstract: A golf club head alloy includes 7-8 wt % of aluminium, 2-3 wt % of molybdenum, 1.4-2.0 wt % of chromium, 0.5-1.1 wt % of vanadium, 0.35-1 wt % of silicon, with the balance being titanium and inevitable impurities. A method of using the golf club head alloy to produce a golf club head is also disclosed.

Abstract: A method for producing a golf club head having a weight block includes providing a club head body formed of a titanium alloy. The club head body includes a surface having a coupling portion. A weight block formed of a tungsten-copper-nickel alloy is provided and includes 1-17 wt % of copper and 6-37 wt % of nickel, with the balance being tungsten. The tungsten-copper-nickel alloy has a specific weight of 12-17 g/cm3. The weight block is placed into the coupling portion of the club head body, and a welding heat source is applied to abutting portions of the weight block and the coupling portion to proceed with fusion welding, tightly engaging the weight block with the coupling portion of the club head body.

Abstract: Provided is a titanium alloy for casting a golf club head used to solve the problem of the poor formation rate of the vacuum centrifugal casting method under the use of the conventional titanium alloy. The alloy includes 7.0-8.0 wt % of aluminum (Al), 4.0-5.5 wt % of vanadium (V), 0.5-1.5 wt % of chromium (Cr), 0.05-0.15 wt % of silicon (Si) and 0.05-0.3 wt % of iron (Fe). The others are titanium (Ti) and inevitable impurities.

Abstract: A semiconductor device package includes a package substrate, a first electronic device, a second electronic device and a first molding layer. The package substrate includes a first surface, a second surface opposite to the first surface, and an edge. The first electronic device is positioned over and electrically connected to the package substrate through the first surface. The second electronic device is positioned over and electrically connected to the first electronic device. The first molding layer is positioned over the package substrate, and the first molding layer encapsulates a portion of the first surface and the edge of the package substrate.

Abstract: A semiconductor device package includes a package substrate, a first electronic device, a second electronic device and a first molding layer. The package substrate includes a first surface, a second surface opposite to the first surface, and an edge. The first electronic device is positioned over and electrically connected to the package substrate through the first surface. The second electronic device is positioned over and electrically connected to the first electronic device. The first molding layer is positioned over the package substrate, and the first molding layer encapsulates a portion of the first surface and the edge of the package substrate.