Abstract: In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate is disposed over a doped region of the substrate. A gate dielectric layer is disposed between the source region and the drain region and separates the conductive gate from the doped region. A bottommost surface of the gate dielectric layer is below a topmost surface of the substrate. First and second sidewall spacers are arranged along first and second sides of the conductive gate, respectively. An inner portion of the first sidewall spacer and an inner portion of the second sidewall spacer respectively cover a first and second top surface of the gate dielectric layer. A drain extension region and a source extension region respectively separate the drain region and the source region from the gate dielectric layer.

Abstract: Disclosed is a seasoning method for an etch chamber for improving the passing rate, comprising the steps of: introducing a wafer or plural control wafers into the etch chamber; introducing reacting gases into the etch chamber; applying power to top and bottom electrodes of the etch chamber to plasmarize the reacting gases; and adjusting the gate valve of the etch chamber to 90 to 100% of the fully open position, thereby reducing the amount of by-products and eliminating the factors for reducing the passing rate. The seasoning method of this invention is based on a low pressure, high flow-rate sluicing mechanism, where the atmospheric flow and high vacuuming ability would remove the maximum amount of polymer particles and flaking from the etch chamber.

Abstract: The present invention relates to a method for cleaning a metal etching chamber. The method is accomplished by using waterless auto cleaning first, followed by an Argon clean. The waterless auto cleaning process comprises two steps. First, oxygen plasma is used to eliminate the byproducts produced from the side reaction with photo resistant in the etching reaction. Second, chlorine plasma is used to eliminate the byproducts produced from the side reaction with a metal thin film under a photo resistant and the residual oxygen of the previous step. The Argon clean can further eliminate the residual chlorine of the previous step and the products produced in the chemical reaction during the process of waterless auto clean.

Abstract: A waferless cleaning process of a dry etcher in semiconductor field, comprises the steps of: removing a batch of production wafers out of the chamber of the dry etcher, automatically starting waferless plasma cleaning to clean the chamber when at least a process factor reaches a preset condition, and loading next batch of production wafers into the chamber to undergo a normal production procedure. The process extends the meantime between wet clean (MTBC), prevents high particle counts, stabilizes the chamber condition, and improves process performance, tool uptime and throughput. The invention is characterized by not requiring any dummy wafers. Thus, the present invention does not need an operator. Besides, the present invention is capable of mixing different types of products.