Abstract: An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.

Abstract: An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.

Abstract: An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.

Abstract: An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.

Abstract: The valve blades of the present invention facilitate delayed onset and gradual or fine variations in the flow of gas through the throttle valve to achieve a process interval of interior chamber gas pressures over a broader valve blade step range, achieve aggressive PI over a broad range for enhanced tool throughput, enhance stability of interior chamber gas pressures during substrate processing, and increase tool uptime and production efficiency. In one embodiment, each of the two valve blades in the throttle valve includes at least one, and typically, multiple notches or gaps for a delayed onset, and finely-graded increase, in flow of gas through the valve throughout the step range of the valve blades. In another embodiment, the semicircular valve blades have a cam-shaped configuration and are capable of varying the radius of the circle defined by the two blades.

Abstract: The valve blades of the present invention facilitate delayed onset and gradual or fine variations in the flow of gas through the throttle valve to achieve a process interval of interior chamber gas pressures over a broader valve blade step range, achieve aggressive PI over a broad range for enhanced tool throughput, enhance stability of interior chamber gas pressures during substrate processing, and increase tool uptime and production efficiency. In one embodiment, each of the two valve blades in the throttle valve includes at least one, and typically, multiple notches or gaps for a delayed onset, and finely-graded increase, in flow of gas through the valve throughout the step range of the valve blades. In another embodiment, the semicircular valve blades have a cam-shaped configuration and are capable of varying the radius of the circle defined by the two blades.

Abstract: A cassette pod stage that is equipped with locked guide pins is described. The cassette pod stage of the present invention is provided with at least one aperture therethrough for engaging at least one guide pin. The guide pin is provided with a top portion, a bottom portion and a skirt portion in-between the top portion and the bottom portion for use as a stop during installation of the guide pin through an aperture in the cassette pod stage. The bottom portion of the guide pin is provided with a threaded portion for engaging a locking nut after the guide pin is installed with the threaded portion extending beyond the bottom surface of the cassette pod stage for such engagement.

Abstract: An electrical connector comprises an insulative housing, a plurality of terminals received in the housing, an insulative stuffer and a conductive shield surrounding the housing. The housing comprises a top wall, a bottom wall, two side walls and a baffle between the top wall and the bottom wall. A receptacle and a plurality of channels are defined between the top wall and the baffle. A slot and a plurality of passageways are defined between the baffle and the bottom wall. Each terminal has an upper positioning portion and a contact portion both received in a corresponding channel, and a lower positioning portion received in a corresponding passageway. The shield is of a unitary construction and has a top panel, a bottom panel, a pair of front panels connecting the top panel to the bottom panel, and a pair of lateral panels together defining a space for enclosing the housing.

Abstract: An electrical connector for a flexible flat cable comprises a dielectric housing defining an elongate slot, a number of terminals retained in the housing, a shield enclosing the housing, and a stuffer inserted into the slot for biasing an inserted flexible flat cable into contact with the terminals. Each terminal has a tail portion for connecting with a signal conductor of the inserted cable. The shield comprises a pressing plate extending into the slot of the housing. The pressing plate connects with a bottom wall of the shield via a pair of linkers and is parallel to the bottom wall. Each linker is trapezoidal in shape. Each linker connects with the pressing plate at a first junction portion having a small width and with the bottom wall of the shield at a second junction portion having a large width, thereby preventing a top wall of the shield from upwardly deflecting relative to the housing.