Patents by Inventor Ta-Ching HSIAO
Ta-Ching HSIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230207386Abstract: A method of increasing the resistivity of a silicon carbide wafer includes providing a silicon carbide wafer with a first resistivity, and applying a microwave to treat the silicon carbide wafer. The treated silicon carbide wafer has a second resistivity. The second resistivity is higher than the first resistivity. The microwave treated silicon carbide wafer can be applied in a high-frequency device.Type: ApplicationFiled: December 13, 2022Publication date: June 29, 2023Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Mao-Nan CHANG, Ta-Ching HSIAO, Kuo-Lun HUANG, Pei-Ying CHEN
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Patent number: 11541351Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.Type: GrantFiled: May 21, 2021Date of Patent: January 3, 2023Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ta-Ching Hsiao, Chu-Pi Jeng, Kuo-Lun Huang, Mu-Hsi Sung, Keng-Yang Chen, Li-Duan Tsai
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Publication number: 20210275965Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.Type: ApplicationFiled: May 21, 2021Publication date: September 9, 2021Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ta-Ching HSIAO, Chu-Pi JENG, Kuo-Lun HUANG, Mu-Hsi SUNG, Keng-Yang CHEN, Li-Duan TSAI
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Patent number: 11052348Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.Type: GrantFiled: December 26, 2017Date of Patent: July 6, 2021Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ta-Ching Hsiao, Chu-Pi Jeng, Kuo-Lun Huang, Mu-Hsi Sung, Keng-Yang Chen, Li-Duan Tsai
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Patent number: 11046582Abstract: A method of purifying silicon carbide powder includes: providing a container with a surface coated by a nitrogen-removal metal layer, wherein the nitrogen-removal metal layer is tantalum, niobium, tungsten, or a combination thereof; putting a silicon carbide powder into the container to contact the nitrogen-removal metal layer; and heating the silicon carbide powder under an inert gas at a pressure of 400 torr to 760 torr at 1700° C. to 2300° C. for 2 to 10 hours, thereby reducing the nitrogen content of the silicon carbide powder.Type: GrantFiled: December 27, 2019Date of Patent: June 29, 2021Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ta-Ching Hsiao, Chu-Pi Jeng, Mu-Hsi Sung, Kuo-Lun Huang
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Publication number: 20210139330Abstract: A method of purifying silicon carbide powder includes: providing a container with a surface coated by a nitrogen-removal metal layer, wherein the nitrogen-removal metal layer is tantalum, niobium, tungsten, or a combination thereof; putting a silicon carbide powder into the container to contact the nitrogen-removal metal layer; and heating the silicon carbide powder under an inert gas at a pressure of 400 torr to 760 torr at 1700° C. to 2300° C. for 2 to 10 hours, thereby reducing the nitrogen content of the silicon carbide powder.Type: ApplicationFiled: December 27, 2019Publication date: May 13, 2021Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ta-Ching HSIAO, Chu-Pi JENG, Mu-Hsi SUNG, Kuo-Lun HUANG
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Publication number: 20190176085Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.Type: ApplicationFiled: December 26, 2017Publication date: June 13, 2019Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ta-Ching HSIAO, Chu-Pi JENG, Kuo-Lun HUANG, Mu-Hsi SUNG, Keng-Yang CHEN, Li-Duan TSAI
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Patent number: 10214454Abstract: A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.Type: GrantFiled: July 20, 2018Date of Patent: February 26, 2019Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ta-Ching Hsiao, Wen-Po Tu, Chu-Pi Jeng, Mu-Hsi Sung
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Publication number: 20180327324Abstract: A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.Type: ApplicationFiled: July 20, 2018Publication date: November 15, 2018Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ta-Ching HSIAO, Wen-Po TU, Chu-Pi JENG, Mu-Hsi SUNG
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Patent number: 10059631Abstract: A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.Type: GrantFiled: December 21, 2016Date of Patent: August 28, 2018Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ta-Ching Hsiao, Wen-Po Tu, Chu-Pi Jeng, Mu-Hsi Sung
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Publication number: 20180134625Abstract: A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.Type: ApplicationFiled: December 21, 2016Publication date: May 17, 2018Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ta-Ching HSIAO, Wen-Po TU, Chu-Pi JENG, Mu-Hsi SUNG