Patents by Inventor Ta-Ching Yeh
Ta-Ching Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230178120Abstract: A method (for recycling charge from a first bit line of a memory device to a second bit line of the memory device) includes: before pre-filling the second bit line, momentarily closing switches to transfer a first charge from the first bit line which is involved in a first read operation to the second bit line which is involved subsequently in a second read operation; and each of the first bit line and the second bit line being served by a same sense amplifier.Type: ApplicationFiled: February 7, 2023Publication date: June 8, 2023Inventors: Hung-Chang YU, Ta-Ching YEH
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Patent number: 11574658Abstract: A semiconductor device includes: a sense amplifier; a branched line selectively connectable to the amplifier; an array of bit lines connected to corresponding memory cells; and an intra-sense-amplifier recycling arrangement configured to do as follows including: recovering a first charge from a first bit line associated with a first one of the memory cells, the first charge being associated with a preceding first evaluation performed by the sense amplifier; and boosting the branched line to a reference voltage including reusing the first charge to at least partially charge the branched line; and wherein the sense amplifier is configured to make a second evaluation of a stored value in a second memory cell relative to the reference voltage.Type: GrantFiled: June 8, 2021Date of Patent: February 7, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hung-Chang Yu, Ta-Ching Yeh
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Publication number: 20210295881Abstract: A semiconductor device includes: a sense amplifier; a branched line selectively connectable to the amplifier; an array of bit lines connected to corresponding memory cells; and an intra-sense-amplifier recycling arrangement configured to do as follows including: recovering a first charge from a first bit line associated with a first one of the memory cells, the first charge being associated with a preceding first evaluation performed by the sense amplifier; and boosting the branched line to a reference voltage including reusing the first charge to at least partially charge the branched line; and wherein the sense amplifier is configured to make a second evaluation of a stored value in a second memory cell relative to the reference voltage.Type: ApplicationFiled: June 8, 2021Publication date: September 23, 2021Inventors: Hung-Chang YU, Ta-Ching YEH
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Patent number: 11031051Abstract: A semiconductor device includes: a sense amplifier; a branched line selectively connectable to the sense amplifier; a recycling arrangement selectively connectable to the branched line; an array of memory cells; an array of bit lines connected to corresponding memory cells in the array of memory cells; a multiplexer configured to selectively connect the branched line to a selected one in the array of memory cells through a corresponding line amongst the array of bit lines; and a controller configured to control the recycling arrangement and the multiplexer to perform intra-sense-amplifier recycling of a gleaned amount of charge (gleaned charge) recovered from a first read operation to a second read operation.Type: GrantFiled: November 27, 2019Date of Patent: June 8, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hung-Chang Yu, Ta-Ching Yeh
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Patent number: 10622035Abstract: A sense amplifier includes a first sample and hold circuit, a second sample and hold circuit, a latch-type amplifier. The first sample and hold circuit is coupled to a bit line and configured to sample and hold memory cell data during a pre-charge phase of a sensing operation. The second sample and hold circuit is coupled to a reference bit line and configured to sample and hold data of a reference memory cell data during the pre-charge phase of the sensing operation. The latch-type amplifier, coupled to the first sample and hold circuit and the second sample and hold circuit, and configured to compare the memory cell data and the reference cell data during an evaluation phase of the sensing operation to output a sensing signal. The sense amplifier is isolated from the bit line and the reference bit line during the evaluation phase of the sensing operation. A sensing method adapted to a sense amplifier and a non-volatile memory include a sense amplifier are also introduced.Type: GrantFiled: December 28, 2018Date of Patent: April 14, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hung-Chang Yu, Ta-Ching Yeh
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Publication number: 20200105314Abstract: A sense amplifier includes a first sample and hold circuit, a second sample and hold circuit, a latch-type amplifier. The first sample and hold circuit is coupled to a bit line and configured to sample and hold memory cell data during a pre-charge phase of a sensing operation. The second sample and hold circuit is coupled to a reference bit line and configured to sample and hold data of a reference memory cell data during the pre-charge phase of the sensing operation. The latch-type amplifier, coupled to the first sample and hold circuit and the second sample and hold circuit, and configured to compare the memory cell data and the reference cell data during an evaluation phase of the sensing operation to output a sensing signal. The sense amplifier is isolated from the bit line and the reference bit line during the evaluation phase of the sensing operation. A sensing method adapted to a sense amplifier and a non-volatile memory include a sense amplifier are also introduced.Type: ApplicationFiled: December 28, 2018Publication date: April 2, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hung-Chang Yu, Ta-Ching Yeh
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Publication number: 20200098403Abstract: A semiconductor device includes: a sense amplifier; a branched line selectively connectable to the sense amplifier; a recycling arrangement selectively connectable to the branched line; an array of memory cells; an array of bit lines connected to corresponding memory cells in the array of memory cells; a multiplexer configured to selectively connect the branched line to a selected one in the array of memory cells through a corresponding line amongst the array of bit lines; and a controller configured to control the recycling arrangement and the multiplexer to perform intra-sense-amplifier recycling of a gleaned amount of charge (gleaned charge) recovered from a first read operation to a second read operation.Type: ApplicationFiled: November 27, 2019Publication date: March 26, 2020Inventors: Hung-Chang YU, Ta-Ching YEH
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Patent number: 10497407Abstract: A semiconductor device includes: first and second terminal switches connected correspondingly between the first and second terminals of a sense amplifier and corresponding first and second nodes; first and second recycle switches connected correspondingly between the first and second nodes and corresponding third and fourth nodes; and first and second capacitors connected correspondingly between the third and fourth nodes; and wherein the first and second recycle switches are configured to selectively connect the first and second capacitors correspondingly to the first and second nodes in phases including as follows: during a recovery phase in which first and second gleaned amounts of charge (first and second gleaned charges) are recovered from corresponding selected ones of bit lines; and during a reuse phase in which the first and second gleaned charges are reused from correspondingly onto selected corresponding ones of the array of bit lines.Type: GrantFiled: November 30, 2018Date of Patent: December 3, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hung-Chang Yu, Ta-Ching Yeh
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Publication number: 20190103142Abstract: A semiconductor device includes: first and second terminal switches connected correspondingly between the first and second terminals of a sense amplifier and corresponding first and second nodes; first and second recycle switches connected correspondingly between the first and second nodes and corresponding third and fourth nodes; and first and second capacitors connected correspondingly between the third and fourth nodes; and wherein the first and second recycle switches are configured to selectively connect the first and second capacitors correspondingly to the first and second nodes in phases including as follows: during a recovery phase in which first and second gleaned amounts of charge (first and second gleaned charges) are recovered from corresponding selected ones of bit lines; and during a reuse phase in which the first and second gleaned charges are reused from correspondingly onto selected corresponding ones of the array of bit lines.Type: ApplicationFiled: November 30, 2018Publication date: April 4, 2019Inventors: Hung-Chang YU, Ta-Ching YEH
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Patent number: 10147469Abstract: A semiconductor device including: a sense amplifier; a branched line selectively connectable to the amplifier; a recycling arrangement selectively connectable to the branched line; an array of bit lines connected to corresponding memory cells; a multiplexer configured to selectively connect the branched line to a selected one of the memory cells through a corresponding line amongst the array of bit lines; and a controller configured to control the recycling arrangement and the multiplexer to perform intra-sense-amplifier recycling of a gleaned amount of charge (gleaned charge) recovered from a first read operation to a second read operation.Type: GrantFiled: January 22, 2018Date of Patent: December 4, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hung-Chang Yu, Ta-Ching Yeh
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Publication number: 20180151203Abstract: A semiconductor device including: a sense amplifier; a branched line selectively connectable to the amplifier; a recycling arrangement selectively connectable to the branched line; an array of bit lines connected to corresponding memory cells; a multiplexer configured to selectively connect the branched line to a selected one of the memory cells through a corresponding line amongst the array of bit lines; and a controller configured to control the recycling arrangement and the multiplexer to perform intra-sense-amplifier recycling of a gleaned amount of charge (gleaned charge) recovered from a first read operation to a second read operation.Type: ApplicationFiled: January 22, 2018Publication date: May 31, 2018Inventors: Hung-Chang YU, Ta-Ching YEH
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Patent number: 9875774Abstract: A semiconductor device includes: a sense amplifier; a branched line selectively connectable to the sense amplifier; a recycling arrangement selectively connectable to the branched line; an array of bit lines connected to corresponding memory cells; a multiplexer configured to selectively connect the branched line to a selected one of the memory cells through a corresponding line amongst the array of bit lines; and a controller. The controller is configured to: permit, during a recovery phase in which a gleaned amount of charge (gleaned charge) is recovered, flow of charge (charge-flow) between the recycling arrangement and the branched line; interrupt, during a drainage phase in which the gleaned charge is preserved, charge-flow between the recycling arrangement and the branched line; and permit, during a reuse phase in which the gleaned charge is reused, charge-flow between the recycling arrangement and the branched line.Type: GrantFiled: March 16, 2017Date of Patent: January 23, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hung-Chang Yu, Ta-Ching Yeh