Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

Abstract: Biosensor devices and methods of forming the same are provided. A cavity is formed in a substrate and is configured to receive one or more charged molecules. A transistor is formed in the substrate and includes a source region, a drain region, and a channel region that are spatially separated from the cavity in a lateral direction. A gate of the transistor is disposed below the cavity and extends between the cavity and the source, drain, and channel regions. A voltage potential of the gate is based on a number of the charged molecules in the cavity.

Abstract: Biosensor devices and methods of forming the same are provided. A cavity is formed in a substrate and is configured to receive one or more charged molecules. A transistor is formed in the substrate and includes a source region, a drain region, and a channel region that are spatially separated from the cavity in a lateral direction. A gate of the transistor is disposed below the cavity and extends between the cavity and the source, drain, and channel regions. A voltage potential of the gate is based on a number of the charged molecules in the cavity.

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.

Abstract: Biosensor devices and methods of forming the same are provided. A cavity is formed in a substrate and is configured to receive one or more charged molecules. A transistor is formed in the substrate and includes a source region, a drain region, and a channel region that are spatially separated from the cavity in a lateral direction. A gate of the transistor is disposed below the cavity and extends between the cavity and the source, drain, and channel regions. A voltage potential of the gate is based on a number of the charged molecules in the cavity.

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.

Abstract: The NVM device includes a semiconductor substrate having a first region and a second region. The NVM device includes a data-storing structure formed in the first region and designed operable to retain charges. The NVM device includes a capacitor formed in the second region and coupled with the data-storing structure for data operations. The data-storing structure includes a first doped well of a first-type in the semiconductor substrate. The data-storing structure includes a first gate dielectric feature on the first doped well. The data-storing structure includes a first gate electrode disposed on the first gate dielectric feature and configured to be floating. The capacitor includes a second doped well of the first-type. The capacitor includes a second gate dielectric feature on the second doped well. The capacitor also includes a second gate electrode disposed on the second gate dielectric feature and connected to the first gate electrode.

Abstract: The NVM device includes a semiconductor substrate having a first region and a second region. The NVM device includes a data-storing structure formed in the first region and designed operable to retain charges. The NVM device includes a capacitor formed in the second region and coupled with the data-storing structure for data operations. The data-storing structure includes a first doped well of a first-type in the semiconductor substrate. The data-storing structure includes a first gate dielectric feature on the first doped well. The data-storing structure includes a first gate electrode disposed on the first gate dielectric feature and configured to be floating. The capacitor includes a second doped well of the first-type. The capacitor includes a second gate dielectric feature on the second doped well. The capacitor also includes a second gate electrode disposed on the second gate dielectric feature and connected to the first gate electrode.

Abstract: The NVM device includes a semiconductor substrate having a first region and a second region. The NVM device includes a data-storing structure formed in the first region and designed operable to retain charges. The NVM device includes a capacitor formed in the second region and coupled with the data-storing structure for data operations. The data-storing structure includes a first doped well of a first-type in the semiconductor substrate. The data-storing structure includes a first gate dielectric feature on the first doped well. The data-storing structure includes a first gate electrode disposed on the first gate dielectric feature and configured to be floating. The capacitor includes a second doped well of the first-type. The capacitor includes a second gate dielectric feature on the second doped well. The capacitor also includes a second gate electrode disposed on the second gate dielectric feature and connected to the first gate electrode.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.

Abstract: The NVM device includes a semiconductor substrate having a first region and a second region. The NVM device includes a data-storing structure formed in the first region and designed operable to retain charges. The NVM device includes a capacitor formed in the second region and coupled with the data-storing structure for data operations. The data-storing structure includes a first doped well of a first-type in the semiconductor substrate. The data-storing structure includes a first gate dielectric feature on the first doped well. The data-storing structure includes a first gate electrode disposed on the first gate dielectric feature and configured to be floating. The capacitor includes a second doped well of the first-type. The capacitor includes a second gate dielectric feature on the second doped well. The capacitor also includes a second gate electrode disposed on the second gate dielectric feature and connected to the first gate electrode.

Abstract: A manufacturing method of a thin film transistor is provided. An insulating pattern layer having at least one protrusion is formed on a substrate. At least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. The spacer and the amorphous semiconductor patterns are crystallized. The protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. A carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.

Abstract: A manufacturing method of a thin film transistor is provided. An insulating pattern layer having at least one protrusion is formed on a substrate. At least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. The spacer and the amorphous semiconductor patterns are crystallized. The protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. A carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.